PMEG3010BEA,135
  • Share:

Nexperia USA Inc. PMEG3010BEA,135

Manufacturer No:
PMEG3010BEA,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 1A SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMEG3010BEA,135 is a Schottky diode manufactured by Nexperia USA Inc. This device is part of the Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier series, designed for high-efficiency and low forward voltage drop applications. It is a single-element, surface-mount device, making it suitable for a wide range of electronic circuits.

The diode features an integrated guard ring for stress protection, enhancing its reliability and performance in various operating conditions. With its compact SOD-323 package, it is ideal for applications where space is limited but high performance is required.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Category Diodes - Rectifiers - Single
Package SC-76, SOD-323
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 30V
Current - Average Rectified (Io) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 560mV @ 1A
Reverse Recovery Time (trr) Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 150µA @ 30V
Capacitance @ Vr, F 70pF @ 1V, 1MHz
Mounting Type Surface Mount
Operating Temperature - Junction 150°C (Max)

Key Features

  • Low Forward Voltage Drop: The PMEG3010BEA,135 features a low forward voltage drop of 560mV @ 1A, which helps in reducing energy loss and heat generation in the circuit.
  • High Current Handling: It has an average rectified current (Io) of 1A (DC), making it suitable for applications requiring high current processing.
  • Low Reverse Leakage: The diode has a low reverse leakage current of 150µA @ 30V, which improves power efficiency and reduces energy consumption.
  • Fast Recovery Time: With a fast recovery time of less than 500ns and greater than 200mA (Io), it minimizes energy loss and heat in the circuit.
  • Compact Packaging: The SOD-323 package is compact and suitable for surface mount applications, making it ideal for space-constrained designs.
  • High Operating Temperature: The diode can operate up to a junction temperature of 150°C, making it suitable for harsh operating environments.

Applications

  • Signal Detector: Converts radio signals into DC electrical signals.
  • Automotive Electronics: Used in alternator circuits to convert AC generated by the alternator to DC for charging the vehicle's battery.
  • Battery Charger: Converts AC power from the power source into DC power to charge the battery.
  • HVDC Transmission: Used in high-voltage direct current transmission systems to achieve efficient long-distance transmission.

Q & A

  1. What is the maximum DC reverse voltage (Vr) of the PMEG3010BEA,135?

    The maximum DC reverse voltage (Vr) is 30V.

  2. What is the average rectified current (Io) of the PMEG3010BEA,135?

    The average rectified current (Io) is 1A (DC).

  3. What is the forward voltage drop (Vf) of the PMEG3010BEA,135 at 1A?

    The forward voltage drop (Vf) at 1A is 560mV.

  4. What is the reverse recovery time of the PMEG3010BEA,135?

    The reverse recovery time is less than 500ns and greater than 200mA (Io).

  5. What is the package type of the PMEG3010BEA,135?

    The package type is SC-76, SOD-323.

  6. What is the operating temperature range of the PMEG3010BEA,135?

    The operating temperature range is up to 150°C (Max) junction temperature.

  7. Is the PMEG3010BEA,135 RoHS compliant?

    Yes, the PMEG3010BEA,135 is Lead Free / RoHS Compliant.

  8. What are some common applications of the PMEG3010BEA,135?

    Common applications include signal detectors, automotive electronics, battery chargers, and HVDC transmission systems.

  9. How does the PMEG3010BEA,135 reduce energy loss and heat in circuits?

    The diode reduces energy loss and heat through its low forward voltage drop and fast recovery time.

  10. Where can I find the datasheet for the PMEG3010BEA,135?

    The datasheet can be found on the official Nexperia website or through distributors like Heisener, Kynix, and Dyethin.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):1A (DC)
Voltage - Forward (Vf) (Max) @ If:560 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:150 µA @ 30 V
Capacitance @ Vr, F:70pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.09
5,368

Please send RFQ , we will respond immediately.

Same Series
PMEG3010BEA,115
PMEG3010BEA,115
DIODE SCHOTTKY 30V 1A SOD323
PMEG3010BEV,115
PMEG3010BEV,115
NEXPERIA PMEG3010BEV - RECTIFIER
PMEG2010BEV,115
PMEG2010BEV,115
NOW NEXPERIA PMEG2010BEV - RECTI
PMEG4010BEV,115
PMEG4010BEV,115
DIODE SCHOTTKY 40V 1A SOT666
PMEG4010BEA,115
PMEG4010BEA,115
DIODE SCHOTTKY 40V 1A SOD323
PMEG4010BEA,135
PMEG4010BEA,135
DIODE SCHOTTKY 40V 1A SOD323
PMEG3010BEAZ
PMEG3010BEAZ
DIODE SCHOTTKY 30V 1A SOD323
PMEG3010BEA,135
PMEG3010BEA,135
DIODE SCHOTTKY 30V 1A SOD323

Similar Products

Part Number PMEG3010BEA,135 PMEG3010BEA,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V
Current - Average Rectified (Io) 1A (DC) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 560 mV @ 1 A 560 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 150 µA @ 30 V 150 µA @ 30 V
Capacitance @ Vr, F 70pF @ 1V, 1MHz 70pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL

Related Product By Brand

PMEG2002AESFBYL
PMEG2002AESFBYL
Nexperia USA Inc.
DIODE SCHTKY 20V 200MA DSN0603B2
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
BZV55-C33,115
BZV55-C33,115
Nexperia USA Inc.
DIODE ZENER 33V 500MW LLDS
BZX79-C18,133
BZX79-C18,133
Nexperia USA Inc.
DIODE ZENER 18V 400MW ALF2
PUMD10/ZLF
PUMD10/ZLF
Nexperia USA Inc.
TRANS PREBIAS
BCP52-10TF
BCP52-10TF
Nexperia USA Inc.
BCP52-10T/SOT223/SC-73
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
74HCT245D,652
74HCT245D,652
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74AVCH8T245PW,112
74AVCH8T245PW,112
Nexperia USA Inc.
IC TRANSLATION TXRX 3.6V 24TSSOP
74HCT04PW,118
74HCT04PW,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14TSSOP
74AHC1G04GV-Q100H
74AHC1G04GV-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP SC74A
74LVC02APW-Q100J
74LVC02APW-Q100J
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14TSSOP