Overview
The PMCXB900UEZ is a 20 V, complementary N/P-channel Trench MOSFET produced by Nexperia USA Inc. This device is designed using Trench MOSFET technology, which offers several advantages such as very low threshold voltage and high efficiency. The MOSFET is packaged in a leadless ultra small and ultra thin SMD plastic package (DFN1010B-6 or SOT1216), making it ideal for space-constrained and portable applications. The device is RoHS compliant and features ElectroStatic Discharge (ESD) protection greater than 1 kV HBM.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS [max] | - | - | 20 | V | |
| VGS [max] | - | - | 8 | V | |
| RDSon [max] @ VGS = 4.5 V; @25°C | - | 470 | 620 | mΩ | |
| RDSon [max] @ VGS = 2.5 V | - | - | 850 | mΩ | |
| VESD (kV) | - | - | 1000 | kV | |
| Tj [max] | - | - | 150 | °C | |
| ID [max] (N-channel) | VGS = 4.5 V, T = 25°C | 1 | - | 0.6 | A |
| ID [max] (P-channel) | VGS = -4.5 V, T = 25°C | 1 | - | -0.5 | A |
| VGS(th) [typ] | - | - | 0.7 | V | |
| Ptot [max] | - | - | 0.265 | W | |
| Ciss [typ] | - | - | 21.3 | pF | |
| Coss [typ] | - | - | 5.4 | pF |
Key Features
- Trench MOSFET Technology: Offers high efficiency and low on-state resistance.
- Very Low Threshold Voltage: VGS(th) = 0.7 V, ideal for portable applications.
- Leadless Ultra Small and Ultra Thin SMD Package: DFN1010B-6 (SOT1216) package, dimensions 1.1 x 1.0 x 0.37 mm.
- ESD Protection: Greater than 1 kV HBM.
- Complementary N/P-Channel: Includes both N-channel and P-channel MOSFETs in a single package.
- Low Leakage Current: Suitable for applications requiring minimal power consumption.
- RoHS Compliant: Lead-free and compliant with RoHS regulations.
Applications
- Relay Driver: Suitable for driving relays in various electronic systems.
- High-Speed Line Driver: Ideal for high-speed signal transmission applications.
- Level Shifter: Can be used to shift voltage levels in digital circuits.
- Power Management in Battery-Driven Portables: Optimized for use in portable devices to manage power efficiently.
Q & A
- What is the maximum drain-source voltage (VDS) for the PMCXB900UEZ?
The maximum drain-source voltage (VDS) is 20 V.
- What is the typical threshold voltage (VGS(th)) for this MOSFET?
The typical threshold voltage (VGS(th)) is 0.7 V.
- What is the package type and dimensions of the PMCXB900UEZ?
The package type is DFN1010B-6 (SOT1216), with dimensions 1.1 x 1.0 x 0.37 mm.
- Does the PMCXB900UEZ have ESD protection?
Yes, it has ESD protection greater than 1 kV HBM.
- What are the maximum drain currents for the N-channel and P-channel MOSFETs?
The maximum drain current for the N-channel is 0.6 A, and for the P-channel is 0.5 A.
- Is the PMCXB900UEZ RoHS compliant?
Yes, it is RoHS compliant and lead-free.
- What are some common applications for the PMCXB900UEZ?
Common applications include relay drivers, high-speed line drivers, level shifters, and power management in battery-driven portables.
- What is the maximum junction temperature (Tj) for this MOSFET?
The maximum junction temperature (Tj) is 150°C.
- What is the typical input capacitance (Ciss) for the PMCXB900UEZ?
The typical input capacitance (Ciss) is 21.3 pF.
- Can I order samples of the PMCXB900UEZ from Nexperia?
Yes, samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.
