PMBT2222AMBYL
  • Share:

Nexperia USA Inc. PMBT2222AMBYL

Manufacturer No:
PMBT2222AMBYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBT2222AMBYL is a general-purpose NPN bipolar junction transistor (BJT) produced by Nexperia USA Inc. This component is designed for a wide range of applications, including switching and amplification in electronic circuits. It is known for its high current gain, low noise, and robust performance under various operating conditions.

Key Specifications

CharacteristicSymbolMinMaxUnit
Collector-Base Breakdown VoltageV(BR)CBO6075Vdc
Collector-Emitter Breakdown VoltageV(BR)CEO3040Vdc
Emitter-Base Breakdown VoltageV(BR)EBO5.06.0Vdc
Collector Cutoff CurrentICBO-0.01μAdc
Emitter Cutoff CurrentIEBO-100nAdc
Base-Emitter Saturation VoltageVBE(sat)0.61.3Vdc
Collector-Emitter Saturation VoltageVCE(sat)0.41.6Vdc
Current-Gain Bandwidth ProductfT250300MHz

Key Features

  • High current gain and low noise, making it suitable for both switching and amplification applications.
  • Robust performance with high breakdown voltages (V(BR)CBO, V(BR)CEO, V(BR)EBO).
  • Low collector and base-emitter saturation voltages for efficient operation.
  • Wide operating temperature range, enhancing reliability in various environments.
  • Compact package (SOT23) for space-efficient designs.

Applications

The PMBT2222AMBYL is versatile and can be used in a variety of applications, including:

  • Switching circuits: Due to its high current gain and low saturation voltages, it is ideal for switching applications.
  • Amplifier circuits: Suitable for general-purpose amplification in audio, signal processing, and other electronic systems.
  • Automotive electronics: Although not specifically AEC-Q100 qualified, it can be used in less stringent automotive applications.
  • Industrial control systems: For motor control, power supplies, and other industrial automation tasks.

Q & A

  1. What is the PMBT2222AMBYL?
    The PMBT2222AMBYL is a general-purpose NPN bipolar junction transistor produced by Nexperia USA Inc.
  2. What are the key specifications of the PMBT2222AMBYL?
    Key specifications include collector-base breakdown voltage (V(BR)CBO), collector-emitter breakdown voltage (V(BR)CEO), emitter-base breakdown voltage (V(BR)EBO), and current-gain bandwidth product (fT).
  3. What are the typical applications of the PMBT2222AMBYL?
    It is used in switching circuits, amplifier circuits, automotive electronics, and industrial control systems.
  4. What is the package type of the PMBT2222AMBYL?
    The component is packaged in a SOT23 package.
  5. What is the operating temperature range of the PMBT2222AMBYL?
    The operating temperature range is typically from -55°C to +150°C.
  6. Is the PMBT2222AMBYL AEC-Q100 qualified?
    No, it is not specifically AEC-Q100 qualified.
  7. What are the advantages of using the PMBT2222AMBYL?
    High current gain, low noise, robust performance, and compact packaging.
  8. Where can I find detailed datasheets for the PMBT2222AMBYL?
    Detailed datasheets can be found on the Nexperia website, Digi-Key, Mouser Electronics, and other authorized distributors.
  9. Can the PMBT2222AMBYL be used in high-frequency applications?
    Yes, it has a high current-gain bandwidth product (fT) of up to 300 MHz, making it suitable for high-frequency applications.
  10. How do I ensure the reliability of the PMBT2222AMBYL in my design?
    Ensure that the operating conditions do not exceed the maximum ratings specified in the datasheet, and follow proper design and mounting guidelines.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:250 mW
Frequency - Transition:340MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-XFDFN
Supplier Device Package:DFN1006B-3
0 Remaining View Similar

In Stock

$0.04
19,308

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number PMBT2222AMBYL PMBT2222AMYL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 250 mW 250 mW
Frequency - Transition 340MHz 340MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-XFDFN SC-101, SOT-883
Supplier Device Package DFN1006B-3 SOT-883

Related Product By Categories

BC846AW,115
BC846AW,115
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
BCX54-16,135
BCX54-16,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
BD13610S
BD13610S
Fairchild Semiconductor
TRANS PNP 45V 1.5A TO126-3
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BZA462A,125
BZA462A,125
Nexperia USA Inc.
TVS DIODE 6.2VWM 9VC 6TSOP
BAT54QB-QZ
BAT54QB-QZ
Nexperia USA Inc.
BAT54QB-Q/SOT8015/DFN1110D-3
BAS40W,115
BAS40W,115
Nexperia USA Inc.
NEXPERIA BAS40W - RECTIFIER DIOD
1PS79SB40,699
1PS79SB40,699
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD523
PMEG3010BEAZ
PMEG3010BEAZ
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1A SOD323
BZX84-B9V1/DG/B4R
BZX84-B9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.1V 250MW TO236AB
BZX84-C8V2/DG/B4R
BZX84-C8V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
74LVC245AD,112
74LVC245AD,112
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 20SO
74AUP1G04GM,132
74AUP1G04GM,132
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 6XSON
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74HC165D-Q100,118
74HC165D-Q100,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16SOIC
74HCT154DB,112
74HCT154DB,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X4:16 24SSOP