PDTA114EU135
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Nexperia USA Inc. PDTA114EU135

Manufacturer No:
PDTA114EU135
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
PDTA114 - 0.1A, 50V, PNP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTA114EU135, manufactured by Nexperia USA Inc., is a 50 V, 100 mA PNP resistor-equipped transistor (RET) designed for various digital applications. This component is packaged in a small SOT323 (SC-70) surface-mounted device (SMD) plastic package, making it ideal for space-constrained designs. The transistor features built-in bias resistors, which simplify circuit design and reduce the overall component count and pick-and-place costs.

Key Specifications

Parameter Value Unit
Type Number PDTA114EU -
Package SOT323 (SC-70) -
Collector Current (Ic) Max 100 mA
Collector Emitter Voltage (Vceo) Max 50 V
Base Resistor (R1) Typical 10
Emitter Base Resistor (R2) Typical 10
DC Current Gain (hFE) Min @ Ic, Vce 30 @ 5mA, 5V -
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA -
Collector Cutoff Current (Max) 1µA -
Transition Frequency 180MHz -
Power Dissipation (Max) 200mW -
Junction Temperature (Max) 150°C -
Automotive Qualified No -

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design by reducing the need for external resistors
  • Reduces component count and pick-and-place costs
  • Cost-saving alternative for BC847 series in digital applications
  • PNP transistor type with a small SOT323 (SC-70) package

Applications

The PDTA114EU135 is suitable for various digital applications, particularly in the automotive and industrial segments. It is commonly used for:

  • Controlling IC inputs
  • Switching loads
  • Digital circuits where a pre-biased transistor is required

Q & A

  1. What is the maximum collector current of the PDTA114EU135?

    The maximum collector current is 100 mA.

  2. What is the collector-emitter voltage breakdown of the PDTA114EU135?

    The collector-emitter voltage breakdown is 50 V.

  3. What are the values of the built-in bias resistors in the PDTA114EU135?

    The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.

  4. What is the package type of the PDTA114EU135?

    The package type is SOT323 (SC-70).

  5. What is the maximum power dissipation of the PDTA114EU135?

    The maximum power dissipation is 200 mW.

  6. Is the PDTA114EU135 automotive qualified?

    No, the PDTA114EU135 is not automotive qualified.

  7. What are the typical applications of the PDTA114EU135?

    It is used in controlling IC inputs, switching loads, and other digital circuits.

  8. How does the PDTA114EU135 simplify circuit design?

    It simplifies circuit design by reducing the need for external resistors due to its built-in bias resistors.

  9. What is the transition frequency of the PDTA114EU135?

    The transition frequency is 180 MHz.

  10. What is the junction temperature maximum of the PDTA114EU135?

    The junction temperature maximum is 150°C.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number PDTA114EU135 PDTB114EU135
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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