PBSS5330XZ
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Nexperia USA Inc. PBSS5330XZ

Manufacturer No:
PBSS5330XZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 3A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS5330XZ is a PNP low VCEsat (BISS) transistor manufactured by Nexperia USA Inc. This transistor is part of Nexperia's range of Breakthrough In Small Signal (BISS) devices, known for their very low collector-emitter saturation voltages and high collector current capacities. These characteristics make the PBSS5330XZ highly efficient in switching and digital applications, resulting in lower heat generation and reduced losses.

Key Specifications

Specification Value
Transistor Type PNP
Maximum DC Collector Current -3 A
Maximum Collector Emitter Voltage (VCEO) -30 V
Package Type SOT89 (UPAK)
Mounting Type Surface Mount
Maximum Power Dissipation 1.6 W
Minimum DC Current Gain 200
Transistor Configuration Single
Maximum Collector Base Voltage (VCBO) 30 V
Maximum Emitter Base Voltage (VEBO) 6 V
Maximum Operating Frequency 100 MHz
Pin Count 4
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Dimensions 1.6 x 4.6 x 2.6 mm

Key Features

  • Very low collector-emitter saturation voltage (VCEsat), enhancing efficiency in switching and digital applications.
  • High collector current capacity of up to 3 A.
  • Compact SOT89 (UPAK) package, ideal for space-saving designs.
  • Surface mount technology for easy integration into PCBs.
  • High minimum DC current gain of 200, ensuring reliable operation.
  • Lead-free and halogen-free, compliant with EU RoHS, CN RoHS, and REACH regulations.

Applications

  • Power management: DC/DC converters, supply line switching, battery chargers.
  • LCD backlighting.
  • Peripheral drivers in low supply voltage systems.
  • General-purpose switching and digital applications where low VCEsat is beneficial.

Q & A

  1. What is the maximum DC collector current of the PBSS5330XZ transistor?

    The maximum DC collector current is -3 A.

  2. What is the maximum collector-emitter voltage (VCEO) of the PBSS5330XZ?

    The maximum collector-emitter voltage is -30 V.

  3. What package type does the PBSS5330XZ come in?

    The PBSS5330XZ comes in a SOT89 (UPAK) package.

  4. What is the mounting type of the PBSS5330XZ transistor?

    The mounting type is surface mount.

  5. What is the maximum power dissipation of the PBSS5330XZ?

    The maximum power dissipation is 1.6 W.

  6. What is the minimum DC current gain of the PBSS5330XZ?

    The minimum DC current gain is 200.

  7. Is the PBSS5330XZ compliant with RoHS and REACH regulations?

    Yes, it is compliant with EU RoHS, CN RoHS, and REACH regulations.

  8. What are the dimensions of the PBSS5330XZ transistor?

    The dimensions are 1.6 x 4.6 x 2.6 mm.

  9. What is the maximum operating temperature of the PBSS5330XZ?

    The maximum operating temperature is +150 °C.

  10. What are some common applications of the PBSS5330XZ transistor?

    Common applications include power management, LCD backlighting, and peripheral drivers in low supply voltage systems).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:240mV @ 100mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:175 @ 1A, 2V
Power - Max:550 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
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