PBSS5330X,135
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Nexperia USA Inc. PBSS5330X,135

Manufacturer No:
PBSS5330X,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 3A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS5330X,135 is a PNP low VCEsat (BISS) transistor manufactured by Nexperia USA Inc. This transistor is designed to operate at a maximum collector-emitter voltage of 30 V and a maximum collector current of 3 A. It is packaged in the SOT89 (SC-62) package, which is compact and suitable for surface mount applications. The PBSS5330X is known for its low collector-emitter saturation voltage (VCEsat), making it ideal for various power management and peripheral driver applications.

Key Specifications

ParameterValueUnit
TypePNP-
Collector-Emitter Voltage (Vce)30V
Collector Current (Ic)3A
Collector-Emitter Saturation Voltage (VCEsat)320 mV @ 300 mA, 3 AmV
DC Current Gain (hFE)175 @ 1 A, 2 V-
Operating Temperature (TJ)-55 to 150°C
PackageSOT89 (SC-62)-
Mounting TypeSurface Mount-

Key Features

  • Low collector-emitter saturation voltage (VCEsat) of 320 mV @ 300 mA, 3 A, which reduces power losses and improves efficiency.
  • High collector current of up to 3 A, suitable for various power management applications.
  • Compact SOT89 (SC-62) package, ideal for surface mount technology and space-saving designs.
  • AEC-Q100 qualified, ensuring reliability and performance in automotive and other demanding environments.
  • Compliant with EU/CN RoHS, REACH, and ELV directives, ensuring environmental sustainability.

Applications

  • Power management: DC/DC converters, supply line switching, battery chargers.
  • Peripheral drivers: Drivers in low supply voltage systems.
  • LCD backlighting.
  • Automotive electronics: Various applications requiring high reliability and low power losses.
  • Industrial and consumer electronics: Motor drives, power supplies, and other high-current applications.

Q & A

  1. What is the maximum collector-emitter voltage of the PBSS5330X transistor?
    The maximum collector-emitter voltage is 30 V.
  2. What is the maximum collector current of the PBSS5330X transistor?
    The maximum collector current is 3 A.
  3. What is the typical collector-emitter saturation voltage (VCEsat) of the PBSS5330X transistor?
    The typical VCEsat is 320 mV @ 300 mA, 3 A.
  4. What package type is the PBSS5330X transistor available in?
    The transistor is available in the SOT89 (SC-62) package.
  5. Is the PBSS5330X transistor AEC-Q100 qualified?
    Yes, the PBSS5330X transistor is AEC-Q100 qualified.
  6. What are some common applications of the PBSS5330X transistor?
    Common applications include power management, peripheral drivers, LCD backlighting, and automotive electronics.
  7. Is the PBSS5330X transistor compliant with environmental regulations?
    Yes, it is compliant with EU/CN RoHS, REACH, and ELV directives.
  8. What is the operating temperature range of the PBSS5330X transistor?
    The operating temperature range is -55 to 150°C.
  9. What is the DC current gain (hFE) of the PBSS5330X transistor?
    The DC current gain (hFE) is 175 @ 1 A, 2 V.
  10. Can the PBSS5330X transistor be used in high-power applications?
    Yes, it is suitable for high-power applications due to its high collector current and low VCEsat.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:320mV @ 300mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:175 @ 1A, 2V
Power - Max:1.6 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
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Same Series
PBSS5330X,135
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PBSS5330XZ
TRANS PNP 30V 3A SOT89

Similar Products

Part Number PBSS5330X,135 PBSS5350X,135 PBSS4330X,135 PBSS5320X,135 PBSS5330X,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Transistor Type PNP PNP NPN PNP PNP
Current - Collector (Ic) (Max) 3 A 3 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 30 V 50 V 30 V 20 V 30 V
Vce Saturation (Max) @ Ib, Ic 320mV @ 300mA, 3A 390mV @ 300mA, 3A 300mV @ 300mA, 3A 300mV @ 300mA, 3A 320mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA 100nA (ICBO) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 175 @ 1A, 2V 200 @ 1A, 2V 270 @ 1A, 2V 150 @ 2A, 2V 175 @ 1A, 2V
Power - Max 1.6 W 1.6 W 1.6 W 1.6 W 1.6 W
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-89 SOT-89 SOT-89 SOT-89

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