Overview
The PBSS2515YPN,115 is a bipolar junction transistor (BJT) array produced by Nexperia USA Inc. This component features a pair of transistors, one NPN and one PNP, integrated into a single SC-88 (SOT363) package. It is designed for applications requiring low collector-emitter saturation voltage (VCE(sat)) and high current capability. The device is suitable for various general-purpose switching and driving applications, making it a versatile choice for electronic designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VCEO (Collector-Emitter Voltage) | 15 | V |
| IC (Collector Current, DC) | 500 | mA |
| ICM (Peak Collector Current) | 1 | A |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 250 mV @ 50 mA, 500 mA | mV |
| Ptot (Total Power Dissipation) | 300 | mW |
| Tj (Junction Temperature) | -150 | °C |
| Tamb (Operating Ambient Temperature) | -65 to +150 | °C |
| fT (Transition Frequency) | 420 MHz (NPN), 280 MHz (PNP) | MHz |
| hFE (DC Current Gain) | 150 @ 100 mA, 2 V | - |
| Package | SC-88 (SOT363), 6-TSSOP | - |
Key Features
- Low Collector-Emitter Saturation Voltage (VCE(sat)): Ensures efficient operation with minimal voltage drop across the collector and emitter.
- High Current Capability: Supports up to 500 mA of collector current, making it suitable for high-current applications.
- Compact Package: The SC-88 (SOT363) package replaces two SC-70 packaged transistors, reducing PCB area and pick-and-place costs.
- High Transition Frequency: With transition frequencies of 420 MHz for the NPN transistor and 280 MHz for the PNP transistor, it is suitable for high-frequency applications.
Applications
- General Purpose Switching and Muting: Ideal for various switching and muting circuits due to its low VCE(sat) and high current capability.
- Low Frequency Driver Circuits: Suitable for driving low-frequency signals efficiently.
- LCD Backlighting: Can be used in LCD backlighting circuits due to its ability to handle high currents.
- Supply Line Switching Circuits: Effective in supply line switching applications where low VCE(sat) is beneficial.
- Battery Driven Equipment: Used in mobile phones, video cameras, and other hand-held devices where power efficiency is crucial.
Q & A
- What is the collector-emitter voltage rating of the PBSS2515YPN,115?
The collector-emitter voltage (VCEO) rating is 15 V.
- What is the maximum collector current for the PBSS2515YPN,115?
The maximum collector current (IC) is 500 mA.
- What is the typical DC current gain (hFE) of the PBSS2515YPN,115?
The typical DC current gain (hFE) is 150 at 100 mA and 2 V.
- What is the transition frequency of the NPN and PNP transistors in the PBSS2515YPN,115?
The transition frequency is 420 MHz for the NPN transistor and 280 MHz for the PNP transistor.
- What are the benefits of the compact SC-88 (SOT363) package of the PBSS2515YPN,115?
The compact package reduces the required PCB area and pick-and-place costs by replacing two SC-70 packaged transistors.
- What are some common applications of the PBSS2515YPN,115?
Common applications include general-purpose switching and muting, low-frequency driver circuits, LCD backlighting, supply line switching circuits, and battery-driven equipment.
- What is the maximum junction temperature for the PBSS2515YPN,115?
The maximum junction temperature (Tj) is 150°C.
- What is the total power dissipation rating of the PBSS2515YPN,115?
The total power dissipation (Ptot) is 300 mW.
- How does the PBSS2515YPN,115 reduce costs in PCB design?
The device reduces costs by minimizing the PCB area and reducing pick-and-place costs due to its compact package.
- What is the collector-emitter saturation voltage (VCE(sat)) of the PBSS2515YPN,115?
The collector-emitter saturation voltage (VCE(sat)) is 250 mV at 50 mA and 500 mA.
