PBHV8540T,215
  • Share:

Nexperia USA Inc. PBHV8540T,215

Manufacturer No:
PBHV8540T,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 400V 0.5A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBHV8540T,215 is a high-voltage, low VCEsat NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for a variety of applications requiring high voltage and low collector-emitter saturation voltage.

This component is designed to offer high collector current capability, high collector current gain at high collector currents, and a low VCEsat, which enhances its efficiency and reliability in various electronic systems.

Key Specifications

Parameter Value Unit
Type NPN -
Package SOT23 (TO-236AB) -
VCEO (max) 400 V
IC (max) 500 mA
VCEsat Low -
hFE (min) 100 -
TJ (max) 150 °C
Ptot 300 mW
Package Size 2.9 x 1.3 x 1 mm

Key Features

  • High voltage capability up to 400 V
  • Low collector-emitter saturation voltage (VCEsat)
  • High collector current capability (IC up to 500 mA)
  • High collector current gain (hFE) at high collector currents
  • Small SOT23 (TO-236AB) SMD plastic package
  • Automotive qualified

Applications

  • Electronic ballast for fluorescent lighting
  • LED driver for LED chain modules
  • LCD backlighting
  • High Intensity Discharge (HID) front lighting
  • Automotive motor management
  • Hook switch for wired telecom
  • Switch Mode Power Supply (SMPS)

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the PBHV8540T,215 transistor?

    The maximum collector-emitter voltage (VCEO) is 400 V.

  2. What is the package type of the PBHV8540T,215 transistor?

    The transistor is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.

  3. What is the maximum collector current (IC) of the PBHV8540T,215 transistor?

    The maximum collector current (IC) is 500 mA.

  4. What are the key applications of the PBHV8540T,215 transistor?

    The key applications include electronic ballast for fluorescent lighting, LED driver for LED chain modules, LCD backlighting, High Intensity Discharge (HID) front lighting, automotive motor management, and Switch Mode Power Supply (SMPS).

  5. What is the maximum junction temperature (TJ) of the PBHV8540T,215 transistor?

    The maximum junction temperature (TJ) is 150°C.

  6. Is the PBHV8540T,215 transistor automotive qualified?

    Yes, the PBHV8540T,215 transistor is automotive qualified.

  7. What is the collector-emitter saturation voltage (VCEsat) characteristic of the PBHV8540T,215 transistor?

    The transistor has a low collector-emitter saturation voltage (VCEsat).

  8. How can I order samples of the PBHV8540T,215 transistor?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

  9. What is the PNP complement of the PBHV8540T,215 transistor?

    The PNP complement of the PBHV8540T,215 transistor is the PBHV9040T.

  10. What is the power dissipation (Ptot) of the PBHV8540T,215 transistor?

    The power dissipation (Ptot) is 300 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 60mA, 300mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 300mA, 10V
Power - Max:300 mW
Frequency - Transition:30MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

$0.47
889

Please send RFQ , we will respond immediately.

Related Product By Categories

PMBTA06,235
PMBTA06,235
Nexperia USA Inc.
TRANS NPN 80V 0.5A TO236AB
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCP53-10TX
BCP53-10TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
PMEG3010BEAZ
PMEG3010BEAZ
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1A SOD323
BZX84-C8V2,235
BZX84-C8V2,235
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
BZT52H-B20,115
BZT52H-B20,115
Nexperia USA Inc.
DIODE ZENER 20V 375MW SOD123F
PDZ12B,115
PDZ12B,115
Nexperia USA Inc.
DIODE ZENER 12V 400MW SOD323
PBSS4041SPN,115
PBSS4041SPN,115
Nexperia USA Inc.
TRANS NPN/PNP 60V 6.7A/5.9A 8SO
BCP56-10,115
BCP56-10,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
PDZ15BGW,115
PDZ15BGW,115
Nexperia USA Inc.
ZENER DIODE