PBHV8540T,215
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Nexperia USA Inc. PBHV8540T,215

Manufacturer No:
PBHV8540T,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 400V 0.5A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBHV8540T,215 is a high-voltage, low VCEsat NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for a variety of applications requiring high voltage and low collector-emitter saturation voltage.

This component is designed to offer high collector current capability, high collector current gain at high collector currents, and a low VCEsat, which enhances its efficiency and reliability in various electronic systems.

Key Specifications

Parameter Value Unit
Type NPN -
Package SOT23 (TO-236AB) -
VCEO (max) 400 V
IC (max) 500 mA
VCEsat Low -
hFE (min) 100 -
TJ (max) 150 °C
Ptot 300 mW
Package Size 2.9 x 1.3 x 1 mm

Key Features

  • High voltage capability up to 400 V
  • Low collector-emitter saturation voltage (VCEsat)
  • High collector current capability (IC up to 500 mA)
  • High collector current gain (hFE) at high collector currents
  • Small SOT23 (TO-236AB) SMD plastic package
  • Automotive qualified

Applications

  • Electronic ballast for fluorescent lighting
  • LED driver for LED chain modules
  • LCD backlighting
  • High Intensity Discharge (HID) front lighting
  • Automotive motor management
  • Hook switch for wired telecom
  • Switch Mode Power Supply (SMPS)

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the PBHV8540T,215 transistor?

    The maximum collector-emitter voltage (VCEO) is 400 V.

  2. What is the package type of the PBHV8540T,215 transistor?

    The transistor is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.

  3. What is the maximum collector current (IC) of the PBHV8540T,215 transistor?

    The maximum collector current (IC) is 500 mA.

  4. What are the key applications of the PBHV8540T,215 transistor?

    The key applications include electronic ballast for fluorescent lighting, LED driver for LED chain modules, LCD backlighting, High Intensity Discharge (HID) front lighting, automotive motor management, and Switch Mode Power Supply (SMPS).

  5. What is the maximum junction temperature (TJ) of the PBHV8540T,215 transistor?

    The maximum junction temperature (TJ) is 150°C.

  6. Is the PBHV8540T,215 transistor automotive qualified?

    Yes, the PBHV8540T,215 transistor is automotive qualified.

  7. What is the collector-emitter saturation voltage (VCEsat) characteristic of the PBHV8540T,215 transistor?

    The transistor has a low collector-emitter saturation voltage (VCEsat).

  8. How can I order samples of the PBHV8540T,215 transistor?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

  9. What is the PNP complement of the PBHV8540T,215 transistor?

    The PNP complement of the PBHV8540T,215 transistor is the PBHV9040T.

  10. What is the power dissipation (Ptot) of the PBHV8540T,215 transistor?

    The power dissipation (Ptot) is 300 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 60mA, 300mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 300mA, 10V
Power - Max:300 mW
Frequency - Transition:30MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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In Stock

$0.47
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