NX138BKSX
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Nexperia USA Inc. NX138BKSX

Manufacturer No:
NX138BKSX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2 N-CH 60V 210MA 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX138BKSX is a dual N-channel MOSFET array produced by Nexperia USA Inc. This component is designed for a variety of applications requiring low power, high efficiency, and compact packaging. The NX138BKSX is housed in a 6-TSSOP (Thin Shrink Small Outline Package) which is ideal for space-constrained designs. It is part of Nexperia's extensive range of discrete semiconductor products, known for their reliability and performance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Drain Current)210 mA (at Ta)
PTOT (Total Power Dissipation)320 mW
VGS(th) (Gate-Source Threshold Voltage)0.5 V to 1.5 V
RDS(on) (On-State Drain-Source Resistance)Typically 1.5 Ω
Package6-TSSOP
RoHS StatusLead Free / RoHS Compliant

Key Features

  • Dual N-channel MOSFET array for enhanced performance and reduced board space.
  • Low on-state resistance (RDS(on)) for efficient power handling.
  • Compact 6-TSSOP package suitable for space-constrained applications.
  • Lead-free and RoHS compliant, ensuring environmental sustainability.
  • High drain-source voltage (VDS) of 60 V, making it versatile for various power applications.

Applications

  • Power management in consumer electronics and industrial devices.
  • Automotive electronics, including battery management and motor control.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • General-purpose switching and amplification in electronic circuits.

Q & A

  1. What is the drain-source voltage rating of the NX138BKSX?
    The drain-source voltage rating of the NX138BKSX is 60 V.
  2. What is the typical on-state drain-source resistance of the NX138BKSX?
    The typical on-state drain-source resistance (RDS(on)) is 1.5 Ω.
  3. What package type is used for the NX138BKSX?
    The NX138BKSX is housed in a 6-TSSOP package.
  4. Is the NX138BKSX RoHS compliant?
    Yes, the NX138BKSX is lead-free and RoHS compliant.
  5. What is the total power dissipation of the NX138BKSX?
    The total power dissipation (PTOT) is 320 mW.
  6. What are some common applications of the NX138BKSX?
    The NX138BKSX is used in power management, automotive electronics, industrial automation, renewable energy systems, and general-purpose switching.
  7. Where can I find the datasheet for the NX138BKSX?
    You can find the datasheet for the NX138BKSX on the Nexperia website or through distributors like Digi-Key and Mouser.
  8. What is the gate-source threshold voltage range of the NX138BKSX?
    The gate-source threshold voltage (VGS(th)) range is 0.5 V to 1.5 V.
  9. Is the NX138BKSX suitable for high-temperature applications?
    The component is designed to operate within standard temperature ranges; however, specific high-temperature applications should be verified against the datasheet specifications.
  10. Can I use the NX138BKSX in automotive applications?
    Yes, the NX138BKSX can be used in automotive electronics, but ensure it meets the specific automotive standards and qualifications required for your application.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:210mA (Ta)
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:20pF @ 30V
Power - Max:320mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Same Series
NX138BKSX
NX138BKSX
MOSFET 2 N-CH 60V 210MA 6TSSOP

Similar Products

Part Number NX138BKSX NX138AKSX NX138BKSF
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Standard
Drain to Source Voltage (Vdss) 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 210mA (Ta) 170mA (Ta) 330mA (Tc)
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 10V 4.5Ohm @ 170mA, 10V 3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 10V 1.4nC @ 10V 0.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 30V 20pF @ 30V 20pF @ 30V
Power - Max 320mW 325mW 860mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP

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