Overview
The BCP56-16T-QF is a medium power NPN bipolar junction transistor (BJT) produced by Nexperia USA Inc. This transistor is designed for high-performance applications, offering a robust set of features and specifications that make it suitable for a variety of uses. It is packaged in a SOT223 (SC-73) surface-mounted device (SMD) plastic package, which enhances its thermal dissipation capabilities.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-Emitter Voltage) | Open base | - | - | 80 | V |
| IC (Collector Current) | - | - | - | 1 | A |
| ICM (Peak Collector Current) | Single pulse; tp ≤ 1 ms | - | - | 2 | A |
| hFE (DC Current Gain) | VCE = 2 V; IC = 150 mA | 100 | - | 250 | - |
| Ptot (Total Power Dissipation) | - | - | - | 600 | mW |
| TJ (Junction Temperature) | - | - | - | 150 | °C |
| Rth(j-a) (Thermal Resistance from Junction to Ambient) | Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint | - | - | 192 | K/W |
Key Features
- High collector current capability (IC and ICM)
- Three current gain selections (hFE: 100-250 for BCP56-16T-QF)
- High power dissipation capability
- Qualified according to AEC-Q101, recommended for automotive applications
- SOT223 (SC-73) surface-mounted package with increased heatsink
Applications
- Linear voltage regulators
- MOSFET drivers
- Low-side switches
- Power management
- Amplifiers
- Battery-driven devices
Q & A
- What is the collector-emitter voltage (VCEO) of the BCP56-16T-QF transistor? The collector-emitter voltage (VCEO) is up to 80 V.
- What is the maximum collector current (IC) of the BCP56-16T-QF transistor? The maximum collector current (IC) is 1 A.
- What is the peak collector current (ICM) of the BCP56-16T-QF transistor? The peak collector current (ICM) is up to 2 A for a single pulse with tp ≤ 1 ms.
- What are the current gain (hFE) values for the BCP56-16T-QF transistor? The DC current gain (hFE) ranges from 100 to 250 at VCE = 2 V and IC = 150 mA.
- What is the total power dissipation (Ptot) of the BCP56-16T-QF transistor? The total power dissipation (Ptot) is up to 600 mW.
- What is the junction temperature (TJ) limit for the BCP56-16T-QF transistor? The junction temperature (TJ) limit is up to 150 °C.
- What package type is used for the BCP56-16T-QF transistor? The transistor is packaged in a SOT223 (SC-73) surface-mounted device (SMD) plastic package.
- Is the BCP56-16T-QF transistor qualified for automotive applications? Yes, it is qualified according to AEC-Q101 and recommended for automotive applications.
- What are some common applications of the BCP56-16T-QF transistor? Common applications include linear voltage regulators, MOSFET drivers, low-side switches, power management, amplifiers, and battery-driven devices.
- How does the thermal resistance of the BCP56-16T-QF transistor vary based on the PCB configuration? The thermal resistance from junction to ambient (Rth(j-a)) varies depending on the PCB configuration, with values ranging from 93 K/W to 192 K/W.
