BCM857BSH-QX
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Nexperia USA Inc. BCM857BSH-QX

Manufacturer No:
BCM857BSH-QX
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
BCM857BSH-QX
Delivery:
Payment:
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Product Introduction

Overview

The BCM857BSH-QX is a PNP/PNP matched double transistor produced by Nexperia USA Inc. This component is housed in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained applications. The transistor is designed to operate at high temperatures up to 175 °C and is qualified according to AEC-Q101, making it suitable for automotive and other demanding environments.

Key Specifications

Type number Package version Package name Size (mm) Channel type VCEO [max] (V) IC [max] (mA) hFE [min] hFE [max] hFE1 / hFE2 [min] VBE1 / VBE2 [max] (mV)
BCM857BSH-Q SOT363 TSSOP6 2.1 x 1.25 x 0.95 PNP -45.0 -100.0 200.0 450.0 0.95 2.0

Key Features

  • Low collector capacitance and low collector-emitter saturation voltage.
  • Current gain matching and base-emitter voltage matching.
  • Drop-in replacement for standard double transistors with no mutual interference between the transistors.
  • High-temperature applications up to 175 °C.
  • Qualified according to AEC-Q101, recommended for use in automotive applications.
  • Ideal for applications such as current mirrors and differential amplifiers.

Applications

The BCM857BSH-QX is versatile and can be used in a variety of applications across different industries, including:

  • Automotive: Due to its AEC-Q101 qualification, it is well-suited for automotive systems that require high reliability and performance.
  • Industrial: Suitable for industrial control systems, sensors, and other high-reliability applications.
  • Consumer Electronics: Can be used in consumer devices that require compact and efficient transistor solutions.
  • Power and Computing: Applicable in power management and computing systems where matched transistors are necessary.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BCM857BSH-QX?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  2. What is the maximum collector current (IC) of the BCM857BSH-QX?

    The maximum collector current (IC) is 100 mA.

  3. What is the minimum DC current gain (hFE) of the BCM857BSH-QX?

    The minimum DC current gain (hFE) is 200.

  4. Is the BCM857BSH-QX qualified for automotive applications?
  5. What is the maximum operating temperature of the BCM857BSH-QX?

    The maximum operating temperature is 175 °C.

  6. What package type does the BCM857BSH-QX come in?
  7. Are the transistors in the BCM857BSH-QX internally isolated?
  8. What are some common applications for the BCM857BSH-QX?
  9. Can I use the BCM857BSH-QX as a drop-in replacement for standard double transistors?
  10. Is the BCM857BSH-QX RoHS compliant?

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:270mW
Frequency - Transition:100MHz
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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