Overview
The BC857C-QR is a PNP general-purpose bipolar transistor manufactured by Nexperia USA Inc. This transistor is part of the BC857 series, known for its low current and low voltage capabilities, making it suitable for a wide range of applications. The BC857C-QR is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is ideal for space-constrained designs.
This transistor is qualified according to the AEC-Q101 standard, which recommends it for use in automotive applications. It is designed to provide reliable performance in general-purpose switching and amplification roles.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Package | SOT23 (TO-236AB) | - |
| Channel Type | PNP | - |
| Total Power Dissipation (Ptot) | 250.0 | mW |
| Maximum Collector-Emitter Voltage (VCEO) | 65 | V |
| Maximum Collector Current (IC) | 100 | mA |
| Minimum Current Gain (hFE) | 420 | - |
| Maximum Current Gain (hFE) | 800 | - |
| Maximum Junction Temperature (TJ) | 150 | °C |
| Minimum Transition Frequency (fT) | 100 | MHz |
| Automotive Qualified | Yes | - |
Key Features
- Low current capability (maximum 100 mA)
- Low voltage capability (maximum 65 V)
- Qualified according to AEC-Q101, suitable for automotive applications
- General-purpose switching and amplification
- Compact SOT23 (TO-236AB) package for space-efficient designs
- High current gain (hFE) range of 420 to 800
- Maximum junction temperature of 150°C
Applications
The BC857C-QR transistor is versatile and can be used in various applications across different industries, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- Industrial control systems: For general-purpose switching and amplification tasks.
- Consumer electronics: In devices requiring low current and low voltage transistor operations.
- Mobile and wearable devices: Where space and power efficiency are crucial.
Q & A
- What is the maximum collector current of the BC857C-QR transistor?
The maximum collector current is 100 mA.
- What is the maximum collector-emitter voltage of the BC857C-QR transistor?
The maximum collector-emitter voltage is 65 V.
- Is the BC857C-QR transistor qualified for automotive applications?
Yes, it is qualified according to the AEC-Q101 standard.
- What is the package type of the BC857C-QR transistor?
The transistor is packaged in a SOT23 (TO-236AB) package.
- What is the minimum current gain (hFE) of the BC857C-QR transistor?
The minimum current gain is 420.
- What is the maximum junction temperature of the BC857C-QR transistor?
The maximum junction temperature is 150°C.
- What is the minimum transition frequency (fT) of the BC857C-QR transistor?
The minimum transition frequency is 100 MHz.
- Can the BC857C-QR transistor be used in consumer electronics?
Yes, it can be used in consumer electronics due to its low current and low voltage capabilities.
- How can I obtain samples of the BC857C-QR transistor?
Samples can be obtained through Nexperia's sales organization or through their network of global and regional distributors.
- Is the BC857C-QR transistor RoHS compliant?
Yes, the BC857C-QR transistor is RoHS compliant.
