Overview
The BC856B/DG/B4R is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for a wide range of applications requiring low current and low voltage operations. It is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient circuit designs.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | -80 | V | |||
| Collector-Emitter Voltage (VCEO) | -65 | V | |||
| Emitter-Base Voltage (VEBO) | -5.0 | V | |||
| Collector Current (IC) | 100 mA | ||||
| Peak Collector Current (ICM) | 200 mA | ||||
| DC Current Gain (hFE) | VCE = 5 V, IC = 10 mA | 220 | 475 | ||
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C | 250 mW | |||
| Junction Temperature (Tj) | 150 °C | ||||
| Storage Temperature (Tstg) | -65 °C | 150 °C |
Key Features
- PNP general-purpose bipolar junction transistor
- Low current operation: maximum collector current of 100 mA
- Low voltage operation: maximum collector-emitter voltage of 65 V
- High DC current gain (hFE): 220 to 475
- Surface-mounted device (SMD) in SOT23 (TO-236AB) package
- Lead-free and RoHS compliant
- Operating temperature range: -65 °C to 150 °C
Applications
- General-purpose switching and amplification
- Compact and efficient circuit designs in various electronic devices
- Automotive and industrial control systems
- Consumer electronics and audio equipment
Q & A
- What is the maximum collector current of the BC856B/DG/B4R transistor?
The maximum collector current is 100 mA.
- What is the maximum collector-emitter voltage of the BC856B/DG/B4R transistor?
The maximum collector-emitter voltage is 65 V.
- What is the typical DC current gain (hFE) of the BC856B/DG/B4R transistor?
The typical DC current gain (hFE) is between 220 and 475.
- In what package is the BC856B/DG/B4R transistor available?
The transistor is available in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
- Is the BC856B/DG/B4R transistor lead-free and RoHS compliant?
Yes, it is lead-free and RoHS compliant.
- What is the operating temperature range of the BC856B/DG/B4R transistor?
The operating temperature range is from -65 °C to 150 °C.
- What are some common applications of the BC856B/DG/B4R transistor?
Common applications include general-purpose switching and amplification, automotive and industrial control systems, and consumer electronics.
- What is the total power dissipation of the BC856B/DG/B4R transistor at ambient temperatures up to 25 °C?
The total power dissipation is 250 mW.
- What is the storage temperature range for the BC856B/DG/B4R transistor?
The storage temperature range is from -65 °C to 150 °C.
- Is the BC856B/DG/B4R transistor suitable for high-frequency applications?
While it can be used in various applications, it is primarily designed for general-purpose switching and amplification rather than high-frequency operations.
