BC856AQC-QZ
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Nexperia USA Inc. BC856AQC-QZ

Manufacturer No:
BC856AQC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856AQC-Q is a 65 V, 100 mA PNP general-purpose transistor produced by Nexperia USA Inc. This transistor is designed for various electronic applications, including general-purpose switching and amplification. It is available in an ultra-small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package, which features side-wettable flanks suitable for Automatic Optical Inspection (AOI) of solder joints.

Key Specifications

Type numberPackage versionPackage nameSize (mm)Channel typeP tot (mW)V CEO [max] (V)I C [max] (mA)h FE [min]h FE [max]T J [max] (°C)f T [min] (MHz)Automotive qualified
BC856AQC-QSOT8009DFN1412D-31.4 x 1.2 x 0.48PNP360.0-65.0-100.0220.0475.0150100.0Yes

Key Features

  • High power dissipation capability.
  • Suitable for Automatic Optical Inspection (AOI) of solder joints.
  • Smaller footprint compared to conventional leaded SMD packages.
  • Low package height of 0.5 mm.
  • General-purpose switching and amplification.
  • Qualified according to AEC-Q101, making it suitable for automotive applications.

Applications

The BC856AQC-Q transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is recommended for use in automotive applications.
  • Industrial control systems: Suitable for general-purpose switching and amplification.
  • Consumer electronics: Can be used in mobile, computing, and other consumer devices.
  • Space-restricted applications: The ultra-small package makes it ideal for designs where space is limited.

Q & A

  1. What is the maximum voltage rating of the BC856AQC-Q transistor?
    The maximum voltage rating (V CEO) is 65 V.
  2. What is the maximum current rating of the BC856AQC-Q transistor?
    The maximum current rating (I C) is 100 mA.
  3. What package type does the BC856AQC-Q transistor use?
    The transistor is packaged in an ultra-small DFN1412D-3 (SOT8009) leadless SMD package.
  4. Is the BC856AQC-Q transistor suitable for automotive applications?
    Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.
  5. What is the minimum and maximum current gain (h FE) of the BC856AQC-Q transistor?
    The minimum current gain (h FE) is 220, and the maximum is 475.
  6. What is the maximum junction temperature (T J) of the BC856AQC-Q transistor?
    The maximum junction temperature is 150°C.
  7. Can the BC856AQC-Q transistor be used in space-restricted applications?
    Yes, due to its small footprint and low package height of 0.5 mm.
  8. How does the BC856AQC-Q support Automatic Optical Inspection (AOI) of solder joints?
    The transistor features side-wettable flanks, making it suitable for AOI of solder joints.
  9. Where can I purchase the BC856AQC-Q transistor?
    You can purchase it from various distributors such as DigiKey, Mouser Electronics, and Arrow Electronics.
  10. What is the power dissipation capability of the BC856AQC-Q transistor?
    The transistor has a high power dissipation capability of 360 mW.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC856AQC-QZ BC856BQC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3

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