BC846BQCZ
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Nexperia USA Inc. BC846BQCZ

Manufacturer No:
BC846BQCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 65V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BQCZ is an NPN general-purpose transistor produced by Nexperia USA Inc. This transistor is housed in an ultra-small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. It is designed for general-purpose switching and amplification, making it suitable for a wide range of applications where space is restricted.

Key Specifications

Type numberPackageChannel TypePtot (mW)VCEO [max] (V)IC [max] (mA)hFE [min]hFE [max]TJ [max] (°C)fT [min] (MHz)Automotive Qualified
BC846BQCZSOT8015NPN340.065.0100.0200.0450.0150100.0Yes

Key Features

  • Ultra-small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks.
  • High power dissipation capability.
  • Low package height of 0.5 mm, suitable for space-restricted applications.
  • General-purpose switching and amplification.
  • Automotive qualified, meeting AEC-Q100/Q101 standards.

Applications

The BC846BQCZ transistor is versatile and can be used in various applications across different industries, including:

  • Automotive: For various automotive electronics, including safety and efficiency enhancements in e-mobility options.
  • Industrial: In industrial environments for applications such as motor drives, collaborative robots (cobots), and industrial equipment.
  • Consumer and Mobile: In consumer electronics and mobile devices where compact and efficient components are required.
  • Power and Computing: In power supplies, computing hardware, and other applications requiring reliable and efficient switching and amplification.

Q & A

  1. What is the package type of the BC846BQCZ transistor?
    The BC846BQCZ transistor is packaged in an ultra-small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks.
  2. What are the maximum collector-emitter voltage and collector current for the BC846BQCZ?
    The maximum collector-emitter voltage (VCEO) is 65 V, and the maximum collector current (IC) is 100 mA.
  3. Is the BC846BQCZ transistor automotive qualified?
    Yes, the BC846BQCZ transistor is automotive qualified, meeting AEC-Q100/Q101 standards.
  4. What is the typical application of the BC846BQCZ transistor?
    The BC846BQCZ transistor is used for general-purpose switching and amplification in various applications, including automotive, industrial, consumer, and power electronics.
  5. What is the maximum junction temperature for the BC846BQCZ transistor?
    The maximum junction temperature (TJ) is 150°C.
  6. What is the minimum current gain (hFE) for the BC846BQCZ transistor?
    The minimum current gain (hFE) is 200.
  7. What is the maximum current gain (hFE) for the BC846BQCZ transistor?
    The maximum current gain (hFE) is 450.
  8. What is the typical frequency (fT) for the BC846BQCZ transistor?
    The minimum transition frequency (fT) is 100 MHz.
  9. How does the BC846BQCZ contribute to space-restricted applications?
    The BC846BQCZ transistor has a low package height of 0.5 mm, making it suitable for space-restricted applications.
  10. Where can I find more detailed specifications and documentation for the BC846BQCZ transistor?
    You can find detailed specifications, datasheets, and application notes on the Nexperia website or through authorized distributors.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC846BQCZ BC846AQCZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
Transistor Type - -
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3

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