BC817-16QCZ
  • Share:

Nexperia USA Inc. BC817-16QCZ

Manufacturer No:
BC817-16QCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-16QCZ is a high-performance NPN general-purpose transistor manufactured by Nexperia USA Inc. This transistor is part of the BC817 series, known for its high power dissipation capability, high current handling, and three current gain selections. It is packaged in a DFN1412D-3 (SOT8009) package, which offers a smaller footprint and low package height of 0.5 mm, making it ideal for space-restricted applications. The BC817-16QCZ is also qualified according to AEC-Q101, making it suitable for automotive applications.

Key Specifications

ParameterValue
PackageDFN1412D-3 (SOT8009)
Channel TypeNPN
Total Power Dissipation (Ptot)380 mW
Maximum Collector-Emitter Voltage (VCEO)45 V
Maximum Collector Current (IC)500 mA
Minimum Current Gain (hFE)100
Maximum Current Gain (hFE)250
Maximum Junction Temperature (TJ)150°C
Minimum Transition Frequency (fT)100 MHz
Automotive QualifiedYes (AEC-Q101)

Key Features

  • High power dissipation capability
  • High current handling up to 500 mA
  • Three current gain selections
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.5 mm
  • AEC-Q101 qualified for automotive applications
  • General-purpose switching and amplification
  • Ideal for space-restricted applications

Applications

The BC817-16QCZ transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive systems
  • Industrial control systems
  • Consumer electronics
  • Mobile devices
  • Wearables
  • Power and computing systems

Q & A

  1. What is the maximum collector-emitter voltage of the BC817-16QCZ transistor?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  2. What is the maximum collector current of the BC817-16QCZ transistor?
    The maximum collector current (IC) is 500 mA.
  3. What is the package type of the BC817-16QCZ transistor?
    The package type is DFN1412D-3 (SOT8009).
  4. Is the BC817-16QCZ transistor suitable for automotive applications?
    Yes, it is AEC-Q101 qualified.
  5. What are the current gain selections for the BC817-16QCZ transistor?
    The transistor has three current gain selections with a minimum hFE of 100 and a maximum hFE of 250.
  6. What is the maximum junction temperature of the BC817-16QCZ transistor?
    The maximum junction temperature (TJ) is 150°C.
  7. What is the minimum transition frequency of the BC817-16QCZ transistor?
    The minimum transition frequency (fT) is 100 MHz.
  8. Is the BC817-16QCZ transistor suitable for space-restricted applications?
    Yes, due to its smaller footprint and low package height.
  9. Can the BC817-16QCZ transistor be used for general-purpose switching and amplification?
    Yes, it is suitable for general-purpose switching and amplification.
  10. How can I order samples of the BC817-16QCZ transistor?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:380 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
0 Remaining View Similar

In Stock

$0.29
2,960

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC817-16QCZ BC817-16QBZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 380 mW 350 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1110D-3

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
SMMBTA56LT1G
SMMBTA56LT1G
onsemi
TRANS PNP 80V 0.5A SOT23-3
BUF420AW
BUF420AW
STMicroelectronics
TRANS NPN 450V 30A TO247-3
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI

Related Product By Brand

PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
BAS21,235
BAS21,235
Nexperia USA Inc.
DIODE GEN PURP 200V 200MA SOT23
PMEG4030ER/8X
PMEG4030ER/8X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 3A SOD123W
BAS21J/ZLF
BAS21J/ZLF
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SC90
BC847BS/ZLF
BC847BS/ZLF
Nexperia USA Inc.
GENERAL-PURPOSE TRANSISTOR
BC857BMB,315
BC857BMB,315
Nexperia USA Inc.
TRANSISTOR PNP 45V 100MA SOT883
PBSS304NXZ
PBSS304NXZ
Nexperia USA Inc.
PBSS304NX/SOT89/MPT3
74LVC1G74GT-Q100X
74LVC1G74GT-Q100X
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 8XSON
74HCT373PW-Q100,11
74HCT373PW-Q100,11
Nexperia USA Inc.
IC TRANSP LATCH OCT D 20TSSOP
74HCT221D,112
74HCT221D,112
Nexperia USA Inc.
IC MULTIVIBRATOR 31NS 16SO
74HC165D-Q100,118
74HC165D-Q100,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16SOIC
PDZ5.6BGW115
PDZ5.6BGW115
Nexperia USA Inc.
NOW NEXPERIA PDZ5.6BGW - ZENER D