BC817-16QCZ
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Nexperia USA Inc. BC817-16QCZ

Manufacturer No:
BC817-16QCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-16QCZ is a high-performance NPN general-purpose transistor manufactured by Nexperia USA Inc. This transistor is part of the BC817 series, known for its high power dissipation capability, high current handling, and three current gain selections. It is packaged in a DFN1412D-3 (SOT8009) package, which offers a smaller footprint and low package height of 0.5 mm, making it ideal for space-restricted applications. The BC817-16QCZ is also qualified according to AEC-Q101, making it suitable for automotive applications.

Key Specifications

ParameterValue
PackageDFN1412D-3 (SOT8009)
Channel TypeNPN
Total Power Dissipation (Ptot)380 mW
Maximum Collector-Emitter Voltage (VCEO)45 V
Maximum Collector Current (IC)500 mA
Minimum Current Gain (hFE)100
Maximum Current Gain (hFE)250
Maximum Junction Temperature (TJ)150°C
Minimum Transition Frequency (fT)100 MHz
Automotive QualifiedYes (AEC-Q101)

Key Features

  • High power dissipation capability
  • High current handling up to 500 mA
  • Three current gain selections
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.5 mm
  • AEC-Q101 qualified for automotive applications
  • General-purpose switching and amplification
  • Ideal for space-restricted applications

Applications

The BC817-16QCZ transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive systems
  • Industrial control systems
  • Consumer electronics
  • Mobile devices
  • Wearables
  • Power and computing systems

Q & A

  1. What is the maximum collector-emitter voltage of the BC817-16QCZ transistor?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  2. What is the maximum collector current of the BC817-16QCZ transistor?
    The maximum collector current (IC) is 500 mA.
  3. What is the package type of the BC817-16QCZ transistor?
    The package type is DFN1412D-3 (SOT8009).
  4. Is the BC817-16QCZ transistor suitable for automotive applications?
    Yes, it is AEC-Q101 qualified.
  5. What are the current gain selections for the BC817-16QCZ transistor?
    The transistor has three current gain selections with a minimum hFE of 100 and a maximum hFE of 250.
  6. What is the maximum junction temperature of the BC817-16QCZ transistor?
    The maximum junction temperature (TJ) is 150°C.
  7. What is the minimum transition frequency of the BC817-16QCZ transistor?
    The minimum transition frequency (fT) is 100 MHz.
  8. Is the BC817-16QCZ transistor suitable for space-restricted applications?
    Yes, due to its smaller footprint and low package height.
  9. Can the BC817-16QCZ transistor be used for general-purpose switching and amplification?
    Yes, it is suitable for general-purpose switching and amplification.
  10. How can I order samples of the BC817-16QCZ transistor?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:380 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC817-16QCZ BC817-16QBZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 380 mW 350 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1110D-3

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