BC817-16QCH-QZ
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Nexperia USA Inc. BC817-16QCH-QZ

Manufacturer No:
BC817-16QCH-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-16QCH-QZ is a high-performance NPN general-purpose transistor manufactured by Nexperia USA Inc. This transistor is part of the BC817 series, known for its high power dissipation capability and high current handling. It is packaged in the DFN1412D-3 (SOT8009) package, which offers a smaller footprint and low package height of 0.5 mm, making it ideal for space-restricted applications. The BC817-16QCH-QZ is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments.

Key Specifications

Parameter Value
Type Number BC817-16QCH-Q
Package DFN1412D-3 (SOT8009)
Channel Type NPN
VCEO [max] 45 V
IC [max] 500 mA
Ptot 380 mW
hFE [min] 100
hFE [max] 250
TJ [max] 150°C
fT [min] 100 MHz
Automotive Qualified Yes (AEC-Q101)

Key Features

  • High power dissipation capability
  • High current handling up to 500 mA
  • Three current gain selections
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.5 mm
  • AEC-Q101 qualified for automotive applications
  • General-purpose switching and amplification
  • Ideal for space-restricted applications

Applications

The BC817-16QCH-QZ transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive systems
  • Industrial control systems
  • Power management circuits
  • Consumer electronics
  • Mobile and wearable devices
  • General-purpose switching and amplification circuits

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC817-16QCH-QZ transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the maximum collector current (IC) of the BC817-16QCH-QZ transistor?

    The maximum collector current (IC) is 500 mA.

  3. What is the package type of the BC817-16QCH-QZ transistor?

    The package type is DFN1412D-3 (SOT8009).

  4. Is the BC817-16QCH-QZ transistor AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified for automotive applications.

  5. What are the key features of the BC817-16QCH-QZ transistor?

    Key features include high power dissipation capability, high current handling, three current gain selections, and suitability for AOI of solder joints.

  6. In which industries can the BC817-16QCH-QZ transistor be used?

    It can be used in automotive, industrial, power management, consumer electronics, and mobile and wearable device applications.

  7. What is the maximum junction temperature (TJ) of the BC817-16QCH-QZ transistor?

    The maximum junction temperature (TJ) is 150°C.

  8. What is the minimum current gain (hFE) of the BC817-16QCH-QZ transistor?

    The minimum current gain (hFE) is 100.

  9. What is the maximum current gain (hFE) of the BC817-16QCH-QZ transistor?

    The maximum current gain (hFE) is 250.

  10. Is the BC817-16QCH-QZ transistor RoHS compliant?

    Yes, it is compliant with EU RoHS and CN RoHS directives.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:455 mW
Frequency - Transition:100MHz
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC817-16QCH-QZ BC817-16QBH-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 455 mW 420 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1110D-3

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