BC817-16-QVL
  • Share:

Nexperia USA Inc. BC817-16-QVL

Manufacturer No:
BC817-16-QVL
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
TRANS NPN 45V 0.5A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-16-QVL is an NPN general-purpose transistor produced by Nexperia USA Inc. This transistor is part of the BC817-Q series and is designed for a wide range of applications, including automotive, industrial, and consumer electronics. It is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained designs.

The BC817-16-QVL is automotive qualified, meeting the AEC-Q101 standards for high reliability. It features epitaxial planar die construction and is totally lead-free and fully RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Package - SOT23 - -
Collector-Base Breakdown Voltage BVCBO 50 V IC = 100µA
Collector-Emitter Breakdown Voltage BVCEO 45 V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 5 V IE = 100µA
Collector-Emitter Cut-Off Current ICES - 100 nA VCE = 45V, TJ = +150°C
DC Current Gain (hFE) hFE 100 - 250 - VCE = 1.0V, IC = 100mA
Collector-Emitter Saturation Voltage VCE(SAT) - 0.7 V IC = 500mA, IB = 50mA
Base-Emitter Voltage VBE - 1.2 V VCE = 1.0V, IC = 300mA
Power Dissipation PD 310 mW - Mounted on minimum recommended pad layout FR-4 PCB
Thermal Resistance, Junction to Ambient RθJA 403 °C/W - Mounted on minimum recommended pad layout FR-4 PCB
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C - -

Key Features

  • Ideally suited for automatic insertion due to its SOT23 package.
  • Epitaxial planar die construction for reliable performance.
  • Complementary PNP types available (BC807 series).
  • Totally lead-free and fully RoHS compliant, ensuring environmental sustainability.
  • Halogen and antimony free, classified as a 'green' device.
  • Qualified to AEC-Q101 standards for high reliability in automotive applications.
  • High current handling capability with a maximum collector current of 500 mA.
  • Three current gain selections available (BC817-16-Q, BC817-25-Q, BC817-40-Q).

Applications

The BC817-16-QVL transistor is versatile and can be used in a variety of applications across different industries:

  • Automotive systems: Suitable for use in automotive electronics due to its AEC-Q101 qualification.
  • Industrial electronics: Used in control circuits, switching applications, and amplifier circuits.
  • Consumer electronics: Found in audio amplifiers, switching circuits, and general-purpose amplification.
  • Power and computing: Used in power management and computing devices where high reliability and efficiency are required.
  • Mobile and wearables: Suitable for use in mobile devices and wearables due to its small package size and low power consumption.

Q & A

  1. What is the package type of the BC817-16-QVL transistor?

    The BC817-16-QVL transistor is housed in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  2. What are the maximum collector-emitter and collector-base breakdown voltages?

    The maximum collector-emitter breakdown voltage (BVCEO) is 45 V, and the maximum collector-base breakdown voltage (BVCBO) is 50 V.

  3. What is the maximum collector current of the BC817-16-QVL transistor?

    The maximum collector current (IC) is 500 mA.

  4. Is the BC817-16-QVL transistor RoHS compliant?
  5. What are the operating and storage temperature ranges for the BC817-16-QVL transistor?
  6. What is the thermal resistance, junction to ambient, for the BC817-16-QVL transistor?
  7. Does the BC817-16-QVL transistor have a complementary PNP type?
  8. What are the typical applications of the BC817-16-QVL transistor?
  9. Is the BC817-16-QVL transistor qualified for automotive use?
  10. What is the power dissipation capability of the BC817-16-QVL transistor?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

-
311

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
SMMBTA92LT1G
SMMBTA92LT1G
onsemi
TRANS PNP 300V 0.5A SOT23-3
BCX54-16,135
BCX54-16,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
SMMBTA56LT1G
SMMBTA56LT1G
onsemi
TRANS PNP 80V 0.5A SOT23-3
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
BAS40W,115
BAS40W,115
Nexperia USA Inc.
NEXPERIA BAS40W - RECTIFIER DIOD
BC847BPN/DG/B2,115
BC847BPN/DG/B2,115
Nexperia USA Inc.
TRANS GEN PURPOSE SC-88
NX3008PBK,215
NX3008PBK,215
Nexperia USA Inc.
MOSFET P-CH 30V 230MA TO236AB
74VHC245PW,118
74VHC245PW,118
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20TSSOP
74LVC240ADB,118
74LVC240ADB,118
Nexperia USA Inc.
IC BUFFER INVERT 3.6V 20SSOP
74LVC1G74GT,115
74LVC1G74GT,115
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 8XSON
74HCT273D-Q100J
74HCT273D-Q100J
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20SO
HEF4013BTT-Q100J
HEF4013BTT-Q100J
Nexperia USA Inc.
IC FF D-TYPE DUAL 1BIT 14TSSOP
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC1G00GW-Q100H
74LVC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74HCT14D-Q100,118
74HCT14D-Q100,118
Nexperia USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO