BC817-16-QVL
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Nexperia USA Inc. BC817-16-QVL

Manufacturer No:
BC817-16-QVL
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
TRANS NPN 45V 0.5A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-16-QVL is an NPN general-purpose transistor produced by Nexperia USA Inc. This transistor is part of the BC817-Q series and is designed for a wide range of applications, including automotive, industrial, and consumer electronics. It is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained designs.

The BC817-16-QVL is automotive qualified, meeting the AEC-Q101 standards for high reliability. It features epitaxial planar die construction and is totally lead-free and fully RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Package - SOT23 - -
Collector-Base Breakdown Voltage BVCBO 50 V IC = 100µA
Collector-Emitter Breakdown Voltage BVCEO 45 V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 5 V IE = 100µA
Collector-Emitter Cut-Off Current ICES - 100 nA VCE = 45V, TJ = +150°C
DC Current Gain (hFE) hFE 100 - 250 - VCE = 1.0V, IC = 100mA
Collector-Emitter Saturation Voltage VCE(SAT) - 0.7 V IC = 500mA, IB = 50mA
Base-Emitter Voltage VBE - 1.2 V VCE = 1.0V, IC = 300mA
Power Dissipation PD 310 mW - Mounted on minimum recommended pad layout FR-4 PCB
Thermal Resistance, Junction to Ambient RθJA 403 °C/W - Mounted on minimum recommended pad layout FR-4 PCB
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C - -

Key Features

  • Ideally suited for automatic insertion due to its SOT23 package.
  • Epitaxial planar die construction for reliable performance.
  • Complementary PNP types available (BC807 series).
  • Totally lead-free and fully RoHS compliant, ensuring environmental sustainability.
  • Halogen and antimony free, classified as a 'green' device.
  • Qualified to AEC-Q101 standards for high reliability in automotive applications.
  • High current handling capability with a maximum collector current of 500 mA.
  • Three current gain selections available (BC817-16-Q, BC817-25-Q, BC817-40-Q).

Applications

The BC817-16-QVL transistor is versatile and can be used in a variety of applications across different industries:

  • Automotive systems: Suitable for use in automotive electronics due to its AEC-Q101 qualification.
  • Industrial electronics: Used in control circuits, switching applications, and amplifier circuits.
  • Consumer electronics: Found in audio amplifiers, switching circuits, and general-purpose amplification.
  • Power and computing: Used in power management and computing devices where high reliability and efficiency are required.
  • Mobile and wearables: Suitable for use in mobile devices and wearables due to its small package size and low power consumption.

Q & A

  1. What is the package type of the BC817-16-QVL transistor?

    The BC817-16-QVL transistor is housed in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  2. What are the maximum collector-emitter and collector-base breakdown voltages?

    The maximum collector-emitter breakdown voltage (BVCEO) is 45 V, and the maximum collector-base breakdown voltage (BVCBO) is 50 V.

  3. What is the maximum collector current of the BC817-16-QVL transistor?

    The maximum collector current (IC) is 500 mA.

  4. Is the BC817-16-QVL transistor RoHS compliant?
  5. What are the operating and storage temperature ranges for the BC817-16-QVL transistor?
  6. What is the thermal resistance, junction to ambient, for the BC817-16-QVL transistor?
  7. Does the BC817-16-QVL transistor have a complementary PNP type?
  8. What are the typical applications of the BC817-16-QVL transistor?
  9. Is the BC817-16-QVL transistor qualified for automotive use?
  10. What is the power dissipation capability of the BC817-16-QVL transistor?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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