BC807-40-QR
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Nexperia USA Inc. BC807-40-QR

Manufacturer No:
BC807-40-QR
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
TRANS PNP 45V 0.5A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40-QR is a 45 V, 500 mA PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for a wide range of electronic designs. It is part of the BC807 series, which offers high current and multiple current gain selections, making it versatile for both switching and amplification applications.

Key Specifications

ParameterValue
PackageSOT23 (TO-236AB)
Channel TypePNP
VCEO [max]45 V
IC [max]500 mA
Ptot250 mW
hFE [min]250
hFE [max]600
TJ [max]150°C
fT [min]80 MHz
Package Size2.9 x 1.3 x 1 mm

Key Features

  • High current capability of up to 500 mA.
  • Multiple current gain selections (hFE [min]: 250, hFE [max]: 600).
  • General-purpose switching and amplification.
  • Compact SOT23 package for space-efficient designs.
  • Maximum collector-emitter voltage (VCEO) of 45 V.
  • Maximum junction temperature (TJ) of 150°C.
  • Minimum transition frequency (fT) of 80 MHz.

Applications

The BC807-40-QR transistor is suitable for a variety of applications, including:

  • Automotive systems: Due to its robust specifications and compact package, it is often used in automotive electronics.
  • Industrial control systems: It is used in various industrial control circuits for switching and amplification.
  • Consumer electronics: Found in mobile and consumer devices where space and performance are critical.
  • General-purpose electronics: Used in a wide range of general-purpose electronic designs requiring reliable switching and amplification.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC807-40-QR transistor?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  2. What is the maximum collector current (IC) of the BC807-40-QR transistor?
    The maximum collector current (IC) is 500 mA.
  3. What is the package type of the BC807-40-QR transistor?
    The package type is SOT23 (TO-236AB).
  4. What are the minimum and maximum current gain (hFE) values for the BC807-40-QR transistor?
    The minimum current gain (hFE) is 250, and the maximum is 600.
  5. What is the maximum junction temperature (TJ) of the BC807-40-QR transistor?
    The maximum junction temperature (TJ) is 150°C.
  6. What is the minimum transition frequency (fT) of the BC807-40-QR transistor?
    The minimum transition frequency (fT) is 80 MHz.
  7. Is the BC807-40-QR transistor automotive qualified?
    No, the BC807-40-QR transistor is not automotive qualified.
  8. What are some common applications of the BC807-40-QR transistor?
    It is commonly used in automotive systems, industrial control systems, consumer electronics, and general-purpose electronic designs.
  9. How can I obtain samples of the BC807-40-QR transistor?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.
  10. What is the size of the SOT23 package for the BC807-40-QR transistor?
    The package size is 2.9 x 1.3 x 1 mm.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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