BAS21QCZ
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Nexperia USA Inc. BAS21QCZ

Manufacturer No:
BAS21QCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21QCZ is a high-voltage switching diode produced by Nexperia USA Inc. This component is designed for high-speed switching applications and is characterized by its low leakage current, high reverse voltage, and low capacitance. The diode is packaged in a small SMD plastic package, specifically the SOT23 package, making it suitable for a variety of compact electronic designs.

Key Specifications

Parameter Value
Type High-voltage switching diode
Reverse Voltage (VR) ≤ 200 V
Switching Speed (trr) ≤ 50 ns
Leakage Current Low
Capacitance (Cd) ≤ 5 pF
Package SOT23

Key Features

The BAS21QCZ features several key benefits that make it a reliable choice for various applications:

  • High Switching Speed: With a switching speed of trr ≤ 50 ns, this diode is ideal for high-frequency applications.
  • Low Leakage Current: It offers low leakage current, which helps in minimizing power loss and improving overall efficiency.
  • High Reverse Voltage: The diode can handle reverse voltages up to 200 V, making it suitable for high-voltage applications.
  • Low Capacitance: The low capacitance of ≤ 5 pF reduces the impact on high-frequency signals.
  • Compact Package: The SOT23 package is small and convenient for use in space-constrained designs.

Applications

The BAS21QCZ is versatile and can be used in a variety of applications, including:

  • Automotive Electronics: For high-voltage and high-frequency applications in automotive systems.
  • Industrial Electronics: Suitable for use in industrial control systems, motor drives, and power supplies.
  • Consumer Electronics: Used in various consumer electronic devices that require high-speed switching and low leakage current.
  • Power Supplies: Ideal for use in switching power supplies due to its high switching speed and low capacitance.

Q & A

  1. What is the maximum reverse voltage of the BAS21QCZ?

    The maximum reverse voltage of the BAS21QCZ is ≤ 200 V.

  2. What is the typical switching speed of the BAS21QCZ?

    The typical switching speed (trr) of the BAS21QCZ is ≤ 50 ns.

  3. What package type is the BAS21QCZ available in?

    The BAS21QCZ is available in the SOT23 package.

  4. What are the key features of the BAS21QCZ?

    The key features include high switching speed, low leakage current, high reverse voltage, low capacitance, and a compact SOT23 package.

  5. Is the BAS21QCZ RoHS compliant?

    Yes, the BAS21QCZ is RoHS compliant.

  6. What are some common applications of the BAS21QCZ?

    Common applications include automotive electronics, industrial electronics, consumer electronics, and power supplies.

  7. Why is the BAS21QCZ suitable for high-frequency applications?

    The BAS21QCZ is suitable for high-frequency applications due to its high switching speed and low capacitance.

  8. What is the typical capacitance of the BAS21QCZ?

    The typical capacitance (Cd) of the BAS21QCZ is ≤ 5 pF.

  9. Is the BAS21QCZ still in production?

    No, the BAS21QCZ is no longer in production and is considered obsolete.

  10. Where can I find substitutes for the BAS21QCZ?

    You can find substitutes for the BAS21QCZ on distributor websites such as Digi-Key or by consulting with the manufacturer for recommended alternatives.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
Operating Temperature - Junction:150°C
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Similar Products

Part Number BAS21QCZ BAS21QAZ BAS21QBZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 250 V 200 V
Current - Average Rectified (Io) 250mA (DC) 330mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 2pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1010D-3 DFN1110D-3
Operating Temperature - Junction 150°C 150°C (Max) 150°C

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