BAS21QBZ
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Nexperia USA Inc. BAS21QBZ

Manufacturer No:
BAS21QBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21QBZ is a high-voltage switching diode produced by Nexperia USA Inc. This component is designed for general-purpose switching applications and is notable for its fast switching speed and low leakage current. The diode is packaged in a small SMD plastic package, specifically the SOT23 package, which is ideal for automated insertion and surface-mount technology. The BAS21QBZ is also fully RoHS compliant, halogen and antimony free, and suitable for automotive applications requiring specific change control, as it is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities.

Key Specifications

Characteristic Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 200 V
Working Peak Reverse Voltage VRWM 200 V
RMS Reverse Voltage VR(RMS) 141 V
Forward Continuous Current IFM 400 mA
Average Rectified Output Current IO 200 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs IFSM 2.5 A
Reverse Recovery Time trr ≤ 50 ns ns
Total Capacitance CT ≤ 5 pF pF
Forward Voltage VF 1.0 - 1.25 V
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Package SOT23

Key Features

  • High switching speed with a reverse recovery time (trr) of ≤ 50 ns.
  • Low leakage current, ensuring minimal power loss during operation.
  • High reverse voltage rating of up to 200 V, making it suitable for high-voltage applications.
  • Low capacitance of ≤ 5 pF, which is beneficial for high-frequency applications.
  • Small SMD plastic package (SOT23) ideal for automated insertion and surface-mount technology.
  • Totally lead-free and fully RoHS compliant, halogen and antimony free, making it an environmentally friendly option.
  • AEC-Q101 qualified and manufactured in IATF 16949 certified facilities, suitable for automotive applications.

Applications

  • General-purpose switching applications in various electronic circuits.
  • Automotive electronics, including systems requiring specific change control and high reliability.
  • Industrial applications, such as power supplies, motor drives, and control circuits.
  • Consumer electronics, including mobile and wearable devices, where high efficiency and small form factors are crucial.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BAS21QBZ?

    The maximum repetitive peak reverse voltage of the BAS21QBZ is 200 V.

  2. What is the forward continuous current rating of the BAS21QBZ?

    The forward continuous current rating of the BAS21QBZ is 400 mA.

  3. What is the reverse recovery time of the BAS21QBZ?

    The reverse recovery time (trr) of the BAS21QBZ is ≤ 50 ns.

  4. Is the BAS21QBZ RoHS compliant?

    Yes, the BAS21QBZ is totally lead-free and fully RoHS compliant, halogen and antimony free.

  5. What package type is used for the BAS21QBZ?

    The BAS21QBZ is packaged in a SOT23 package.

  6. Is the BAS21QBZ suitable for automotive applications?

    Yes, the BAS21QBZ is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.

  7. What is the total capacitance of the BAS21QBZ?

    The total capacitance of the BAS21QBZ is ≤ 5 pF.

  8. What is the operating and storage temperature range of the BAS21QBZ?

    The operating and storage temperature range of the BAS21QBZ is -55 to +150°C.

  9. Is the BAS21QBZ suitable for high-frequency applications?

    Yes, the BAS21QBZ is suitable for high-frequency applications due to its low capacitance and fast switching speed.

  10. What are some common applications of the BAS21QBZ?

    The BAS21QBZ is commonly used in general-purpose switching applications, automotive electronics, industrial applications, and consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
Operating Temperature - Junction:150°C
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Similar Products

Part Number BAS21QBZ BAS21QCZ BAS21QAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 250 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 330mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1010D-3
Operating Temperature - Junction 150°C 150°C 150°C (Max)

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