BAS21QBZ
  • Share:

Nexperia USA Inc. BAS21QBZ

Manufacturer No:
BAS21QBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21QBZ is a high-voltage switching diode produced by Nexperia USA Inc. This component is designed for general-purpose switching applications and is notable for its fast switching speed and low leakage current. The diode is packaged in a small SMD plastic package, specifically the SOT23 package, which is ideal for automated insertion and surface-mount technology. The BAS21QBZ is also fully RoHS compliant, halogen and antimony free, and suitable for automotive applications requiring specific change control, as it is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities.

Key Specifications

Characteristic Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 200 V
Working Peak Reverse Voltage VRWM 200 V
RMS Reverse Voltage VR(RMS) 141 V
Forward Continuous Current IFM 400 mA
Average Rectified Output Current IO 200 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs IFSM 2.5 A
Reverse Recovery Time trr ≤ 50 ns ns
Total Capacitance CT ≤ 5 pF pF
Forward Voltage VF 1.0 - 1.25 V
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Package SOT23

Key Features

  • High switching speed with a reverse recovery time (trr) of ≤ 50 ns.
  • Low leakage current, ensuring minimal power loss during operation.
  • High reverse voltage rating of up to 200 V, making it suitable for high-voltage applications.
  • Low capacitance of ≤ 5 pF, which is beneficial for high-frequency applications.
  • Small SMD plastic package (SOT23) ideal for automated insertion and surface-mount technology.
  • Totally lead-free and fully RoHS compliant, halogen and antimony free, making it an environmentally friendly option.
  • AEC-Q101 qualified and manufactured in IATF 16949 certified facilities, suitable for automotive applications.

Applications

  • General-purpose switching applications in various electronic circuits.
  • Automotive electronics, including systems requiring specific change control and high reliability.
  • Industrial applications, such as power supplies, motor drives, and control circuits.
  • Consumer electronics, including mobile and wearable devices, where high efficiency and small form factors are crucial.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BAS21QBZ?

    The maximum repetitive peak reverse voltage of the BAS21QBZ is 200 V.

  2. What is the forward continuous current rating of the BAS21QBZ?

    The forward continuous current rating of the BAS21QBZ is 400 mA.

  3. What is the reverse recovery time of the BAS21QBZ?

    The reverse recovery time (trr) of the BAS21QBZ is ≤ 50 ns.

  4. Is the BAS21QBZ RoHS compliant?

    Yes, the BAS21QBZ is totally lead-free and fully RoHS compliant, halogen and antimony free.

  5. What package type is used for the BAS21QBZ?

    The BAS21QBZ is packaged in a SOT23 package.

  6. Is the BAS21QBZ suitable for automotive applications?

    Yes, the BAS21QBZ is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.

  7. What is the total capacitance of the BAS21QBZ?

    The total capacitance of the BAS21QBZ is ≤ 5 pF.

  8. What is the operating and storage temperature range of the BAS21QBZ?

    The operating and storage temperature range of the BAS21QBZ is -55 to +150°C.

  9. Is the BAS21QBZ suitable for high-frequency applications?

    Yes, the BAS21QBZ is suitable for high-frequency applications due to its low capacitance and fast switching speed.

  10. What are some common applications of the BAS21QBZ?

    The BAS21QBZ is commonly used in general-purpose switching applications, automotive electronics, industrial applications, and consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
Operating Temperature - Junction:150°C
0 Remaining View Similar

In Stock

$0.23
1,291

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAS21QBZ BAS21QCZ BAS21QAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 250 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 330mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1010D-3
Operating Temperature - Junction 150°C 150°C 150°C (Max)

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA

Related Product By Brand

BAT54A,235
BAT54A,235
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54S-QR
BAT54S-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
PMEG2002AESFBYL
PMEG2002AESFBYL
Nexperia USA Inc.
DIODE SCHTKY 20V 200MA DSN0603B2
BAS21J/ZLF
BAS21J/ZLF
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SC90
BZX84-C3V3/DG/B3,2
BZX84-C3V3/DG/B3,2
Nexperia USA Inc.
DIODE ZENER 3.3V 250MW TO236AB
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
BC807-16LZ
BC807-16LZ
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BCP52-10TF
BCP52-10TF
Nexperia USA Inc.
BCP52-10T/SOT223/SC-73
PDTD123YT/APGR
PDTD123YT/APGR
Nexperia USA Inc.
PDTD123YT/APGR
74HC244D,652
74HC244D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HCT125DB,118
74HCT125DB,118
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14SSOP
74HC85DB,118
74HC85DB,118
Nexperia USA Inc.
NEXPERIA 74HC85DB - MAGNITUDE CO