BAS21QAZ
  • Share:

Nexperia USA Inc. BAS21QAZ

Manufacturer No:
BAS21QAZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
BAS21QA/SOT1215/DFN1010D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21QAZ is a high-voltage switching diode manufactured by Nexperia USA Inc. This component is designed for high-speed switching applications and is encapsulated in a leadless ultra-small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package. The diode is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments.

Key Specifications

Parameter Conditions Min Typ Max Unit
Forward Current (I_F) T = 25°C - - 330 mA
Reverse Voltage (V_R) - - - 200 V
Repetitive Peak Reverse Voltage (V_RRM) - - - 250 V
Forward Voltage (V_F) I = 200 mA, T = 25°C - - 1.25 V
Reverse Recovery Time (t_rr) I = 30 mA - - 50 ns
Reverse Leakage Current (I_R) V = 200 V, T = 25°C - - 100 nA
Capacitance (C_d) V = 0 V, f = 1 MHz - - 2 pF
Operating Temperature - Junction - - - 150 °C
Package - - - DFN1010D-3 (SOT1215) -

Key Features

  • High switching speed: t_rr ≤ 50 ns
  • Low leakage current: I_R ≤ 100 nA
  • High reverse voltage: V_R ≤ 200 V
  • Low capacitance: C_d ≤ 2 pF
  • Ultra-small and leadless SMD plastic package (DFN1010D-3 / SOT1215)
  • Low package height of 0.37 mm
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • AEC-Q101 qualified for automotive applications

Applications

  • High-speed switching
  • General-purpose switching
  • Voltage clamping
  • Reverse polarity protection

Q & A

  1. What is the maximum forward current of the BAS21QAZ diode?

    The maximum forward current is 330 mA.

  2. What is the maximum reverse voltage of the BAS21QAZ diode?

    The maximum reverse voltage is 200 V.

  3. What is the typical reverse recovery time of the BAS21QAZ diode?

    The typical reverse recovery time is 50 ns.

  4. What is the package type of the BAS21QAZ diode?

    The package type is DFN1010D-3 (SOT1215).

  5. Is the BAS21QAZ diode AEC-Q101 qualified?
  6. What is the maximum operating junction temperature of the BAS21QAZ diode?

    The maximum operating junction temperature is 150°C.

  7. What is the typical forward voltage drop of the BAS21QAZ diode at 200 mA?

    The typical forward voltage drop is 1.25 V.

  8. What is the capacitance of the BAS21QAZ diode at 0 V and 1 MHz?

    The capacitance is 2 pF.

  9. Is the BAS21QAZ diode suitable for high-speed switching applications?
  10. What are some common applications of the BAS21QAZ diode?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):330mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1010D-3
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.37
1,311

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS21QAZ BAS21QBZ BAS21QCZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 200 V 200 V
Current - Average Rectified (Io) 330mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3 DFN1110D-3 DFN1412D-3
Operating Temperature - Junction 150°C (Max) 150°C 150°C

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

BZT52H-B6V2,115
BZT52H-B6V2,115
Nexperia USA Inc.
DIODE ZENER 6.2V 375MW SOD123F
BZX384-C75,115
BZX384-C75,115
Nexperia USA Inc.
DIODE ZENER 75V 300MW SOD323
BZX84-B22,215
BZX84-B22,215
Nexperia USA Inc.
DIODE ZENER 22V 250MW TO236AB
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
BCX51-16,115
BCX51-16,115
Nexperia USA Inc.
TRANS PNP 45V 1A SOT89
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
PDTD123YT/APGR
PDTD123YT/APGR
Nexperia USA Inc.
PDTD123YT/APGR
PMV65XP,215
PMV65XP,215
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
74HC85DB,118
74HC85DB,118
Nexperia USA Inc.
NEXPERIA 74HC85DB - MAGNITUDE CO
74HCT1G00GV125
74HCT1G00GV125
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP SC74A