BAS21QAZ
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Nexperia USA Inc. BAS21QAZ

Manufacturer No:
BAS21QAZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
BAS21QA/SOT1215/DFN1010D-3
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BAS21QAZ is a high-voltage switching diode manufactured by Nexperia USA Inc. This component is designed for high-speed switching applications and is encapsulated in a leadless ultra-small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package. The diode is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments.

Key Specifications

Parameter Conditions Min Typ Max Unit
Forward Current (I_F) T = 25°C - - 330 mA
Reverse Voltage (V_R) - - - 200 V
Repetitive Peak Reverse Voltage (V_RRM) - - - 250 V
Forward Voltage (V_F) I = 200 mA, T = 25°C - - 1.25 V
Reverse Recovery Time (t_rr) I = 30 mA - - 50 ns
Reverse Leakage Current (I_R) V = 200 V, T = 25°C - - 100 nA
Capacitance (C_d) V = 0 V, f = 1 MHz - - 2 pF
Operating Temperature - Junction - - - 150 °C
Package - - - DFN1010D-3 (SOT1215) -

Key Features

  • High switching speed: t_rr ≤ 50 ns
  • Low leakage current: I_R ≤ 100 nA
  • High reverse voltage: V_R ≤ 200 V
  • Low capacitance: C_d ≤ 2 pF
  • Ultra-small and leadless SMD plastic package (DFN1010D-3 / SOT1215)
  • Low package height of 0.37 mm
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • AEC-Q101 qualified for automotive applications

Applications

  • High-speed switching
  • General-purpose switching
  • Voltage clamping
  • Reverse polarity protection

Q & A

  1. What is the maximum forward current of the BAS21QAZ diode?

    The maximum forward current is 330 mA.

  2. What is the maximum reverse voltage of the BAS21QAZ diode?

    The maximum reverse voltage is 200 V.

  3. What is the typical reverse recovery time of the BAS21QAZ diode?

    The typical reverse recovery time is 50 ns.

  4. What is the package type of the BAS21QAZ diode?

    The package type is DFN1010D-3 (SOT1215).

  5. Is the BAS21QAZ diode AEC-Q101 qualified?
  6. What is the maximum operating junction temperature of the BAS21QAZ diode?

    The maximum operating junction temperature is 150°C.

  7. What is the typical forward voltage drop of the BAS21QAZ diode at 200 mA?

    The typical forward voltage drop is 1.25 V.

  8. What is the capacitance of the BAS21QAZ diode at 0 V and 1 MHz?

    The capacitance is 2 pF.

  9. Is the BAS21QAZ diode suitable for high-speed switching applications?
  10. What are some common applications of the BAS21QAZ diode?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):330mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1010D-3
Operating Temperature - Junction:150°C (Max)
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Similar Products

Part Number BAS21QAZ BAS21QBZ BAS21QCZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 200 V 200 V
Current - Average Rectified (Io) 330mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3 DFN1110D-3 DFN1412D-3
Operating Temperature - Junction 150°C (Max) 150°C 150°C

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