MMBT2222AHE3-TP
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Micro Commercial Co MMBT2222AHE3-TP

Manufacturer No:
MMBT2222AHE3-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222AHE3-TP, produced by Micro Commercial Co, is a small signal NPN bipolar junction transistor (BJT) encapsulated in a SOT-23 package. It is the surface mount equivalent of the popular 2N2222A transistor, making it ideal for applications where space is a constraint. This transistor is widely used in electronic design due to its outstanding performance in amplifier and fast-switching circuits.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vce) 40 V
Collector-Base Voltage (Vcb) 75 V
Emitter-Base Voltage (Veb) 6 V
Continuous Collector Current (Ic) 600 mA
DC Current Gain (hFE) 100 to 300
Total Power Dissipation 350 mW
Rise Time 25 ns
Fall Time 60 ns
Transition Frequency (fT) 300 MHz

Key Features

  • Bi-Polar small signal NPN Transistor
  • Epitaxial Planar Die Construction
  • Low Saturation Voltage VCE(sat) < 300mV @ 150mA
  • Complementary PNP Type: MMBT2907A
  • Ideal for Low Power Amplification and Switching
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device
  • High current gain and frequency response
  • High switching speed and ability to handle substantial current

Applications

  • Driver Modules like Relay Driver, LED driver etc.
  • Switching loads up to 600mA
  • Motor speed control
  • Inverter and Rectifier circuits
  • Darlington Pair Designs
  • Amplifier circuits, especially for audio signals
  • Fast-switching applications in digital logic circuits

Q & A

  1. What is the MMBT2222AHE3-TP transistor?

    The MMBT2222AHE3-TP is a small signal NPN bipolar junction transistor (BJT) in a SOT-23 package, equivalent to the 2N2222A transistor.

  2. What is the maximum collector current of the MMBT2222AHE3-TP?

    The maximum continuous collector current is 600mA.

  3. What is the collector-emitter voltage (Vce) of the MMBT2222AHE3-TP?

    The collector-emitter voltage (Vce) is 40V.

  4. What is the total power dissipation of the MMBT2222AHE3-TP?

    The total power dissipation is 350mW.

  5. What are the typical applications of the MMBT2222AHE3-TP?

    Typical applications include driver modules, switching loads, motor speed control, inverter and rectifier circuits, and amplifier circuits.

  6. What is the complementary PNP transistor for the MMBT2222AHE3-TP?

    The complementary PNP transistor is the MMBT2907A.

  7. Is the MMBT2222AHE3-TP RoHS compliant?

    Yes, the MMBT2222AHE3-TP is totally lead-free and fully RoHS compliant.

  8. What is the transition frequency (fT) of the MMBT2222AHE3-TP?

    The transition frequency (fT) is 300MHz.

  9. How do I identify a faulty MMBT2222AHE3-TP transistor?

    You can identify a faulty transistor by measuring its base-emitter and base-collector junctions with a multimeter.

  10. What are the rise and fall times of the MMBT2222AHE3-TP?

    The rise time is 25ns and the fall time is 60ns.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:350 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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In Stock

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