Overview
The 2N2907AE3 is a PNP silicon switching transistor manufactured by Microchip Technology. This transistor is part of the 2N2907 series, known for its reliability and performance in various electronic applications. It is designed to operate within a wide range of voltage and current specifications, making it versatile for use in different circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Breakdown Voltage (VCEO) | -60 | Vdc |
| Collector-Base Breakdown Voltage (VCBO) | -60 | Vdc |
| Emitter-Base Breakdown Voltage (VEBO) | -5.0 | Vdc |
| Collector Cutoff Current (ICEX) | -50 nA | dc |
| Base Cutoff Current (IBEX) | -50 nA | dc |
| Collector Current (IC) | -600 mA | |
| Power Dissipation (Pd) | 500 mW | |
| Turn-On Time (ton) | 50 ns | |
| Turn-Off Time (toff) | 110 ns | |
| Storage Time (ts) | 80 ns | |
| Package Type | Through Hole TO-18 |
Key Features
- PNP silicon switching transistor
- High collector-emitter breakdown voltage of -60 Vdc
- Collector current of -600 mA
- Low power dissipation of 500 mW
- Fast switching times with turn-on time of 50 ns and turn-off time of 110 ns
- Through-hole TO-18 package for easy mounting
- RoHS compliant for environmental sustainability
Applications
The 2N2907AE3 transistor is suitable for a variety of applications including general-purpose switching, amplification, and power management in electronic circuits. It can be used in audio amplifiers, power supplies, motor control circuits, and other electronic devices that require reliable and efficient switching performance.
Q & A
- What is the collector-emitter breakdown voltage of the 2N2907AE3 transistor?
The collector-emitter breakdown voltage is -60 Vdc. - What is the maximum collector current of the 2N2907AE3 transistor?
The maximum collector current is -600 mA. - What is the power dissipation of the 2N2907AE3 transistor?
The power dissipation is 500 mW. - What is the package type of the 2N2907AE3 transistor?
The package type is Through Hole TO-18. - Is the 2N2907AE3 transistor RoHS compliant?
Yes, the 2N2907AE3 transistor is RoHS compliant. - What are the typical applications of the 2N2907AE3 transistor?
The typical applications include general-purpose switching, amplification, and power management in electronic circuits. - What are the turn-on and turn-off times of the 2N2907AE3 transistor?
The turn-on time is 50 ns and the turn-off time is 110 ns. - What is the storage time of the 2N2907AE3 transistor?
The storage time is 80 ns. - Can the 2N2907AE3 transistor be used in high-frequency applications?
Yes, due to its fast switching times, it can be used in high-frequency applications. - Is the 2N2907AE3 transistor suitable for high-power applications?
No, it is not suitable for high-power applications due to its limited power dissipation of 500 mW.
