1N5711UBCC
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Microchip Technology 1N5711UBCC

Manufacturer No:
1N5711UBCC
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
SCHOTTKY DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5711UBCC is a Schottky barrier diode produced by Microchip Technology, although it is more commonly associated with STMicroelectronics. This diode is characterized by its high breakdown voltage, low turn-on voltage, and ultrafast switching capabilities. It is primarily intended for high-level UHF/VHF detection and pulse applications, offering a broad dynamic range. The 1N5711 is available in various packages, including the DO-35 and DO-204AH axial packages, making it versatile for different design requirements.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 70 V
IF (Forward Continuous Current) at Ta = 25°C 15 mA
Ptot (Power Dissipation) at Ta = 25°C 430 mW
Tstg (Storage and Junction Temperature Range) -65 to 200 °C
TL (Maximum Lead Temperature for Soldering during 10s at 4mm from Case) 230 °C
VF (Forward Voltage) at IF = 1mA and Ta = 25°C 0.41 V
VF (Forward Voltage) at IF = 15mA and Ta = 25°C 1 V
IR (Reverse Current) at VR = 50V and Ta = 25°C 0.2 µA
C (Capacitance) at VR = 0V, f = 1MHz, and Ta = 25°C 2 pF
τ (Reverse Recovery Time) at IF = 5mA and Ta = 25°C 100 ps

Key Features

  • High breakdown voltage of 70V
  • Low turn-on voltage, typically 0.41V at 1mA
  • Ultrafast switching with a reverse recovery time of 100ps
  • High power dissipation of 430mW at 25°C
  • Broad dynamic range, suitable for UHF/VHF detection and pulse applications
  • Available in DO-35 and DO-204AH axial packages
  • RoHS compliant in various configurations

Applications

  • High-level UHF/VHF detection
  • Pulse applications requiring fast switching times
  • RF and microwave circuits where low forward voltage drop and high switching speed are necessary
  • General-purpose rectification in low-current, high-frequency applications
  • Switching and mixing circuits in communication systems

Q & A

  1. What is the repetitive peak reverse voltage of the 1N5711 diode?

    The repetitive peak reverse voltage (VRRM) of the 1N5711 diode is 70V.

  2. What is the forward continuous current rating of the 1N5711 at 25°C?

    The forward continuous current (IF) rating of the 1N5711 at 25°C is 15mA.

  3. What is the typical forward voltage drop of the 1N5711 at 1mA?

    The typical forward voltage drop (VF) of the 1N5711 at 1mA is 0.41V.

  4. What is the maximum power dissipation of the 1N5711 at 25°C?

    The maximum power dissipation (Ptot) of the 1N5711 at 25°C is 430mW.

  5. What is the storage and junction temperature range for the 1N5711?

    The storage and junction temperature range for the 1N5711 is -65°C to 200°C.

  6. What is the reverse recovery time of the 1N5711?

    The reverse recovery time (τ) of the 1N5711 is typically 100ps.

  7. In what packages is the 1N5711 available?

    The 1N5711 is available in DO-35 and DO-204AH axial packages.

  8. Is the 1N5711 RoHS compliant?

    Yes, the 1N5711 is available in RoHS-compliant configurations.

  9. What are the typical applications of the 1N5711 diode?

    The 1N5711 is typically used in high-level UHF/VHF detection, pulse applications, and general-purpose rectification in low-current, high-frequency circuits.

  10. Can the 1N5711 be used in life support devices or systems?

    No, the 1N5711 is not authorized for use as critical components in life support devices or systems without express written approval from the manufacturer.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):33mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 50 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:3-SMD, No Lead
Supplier Device Package:UB
Operating Temperature - Junction:-65°C ~ 150°C
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