Overview
The 1N5711UB Schottky barrier diode, produced by Microchip Technology, is a high-reliability component designed for various electronic applications. This diode is ceramic encased and offers military-grade qualifications, making it suitable for demanding environments. It is available in different configurations, including unidirectional, common anode, common cathode, and doubler polarities. The 1N5711UB is part of the 1N5711UB and 1N5712UB series, which are qualified per MIL-PRF-19500/444 standards, including JAN, JANTX, JANTXV, and JANS reliability levels.
Key Specifications
| Parameter | 1N5711UB |
|---|---|
| Breakdown Voltage (VBR) @ 10 µA | 70 V |
| Maximum Forward Voltage (VF) @ 1 mA | 0.41 V |
| Maximum Forward Voltage (VF) @ IF | 1.0 V @ 15 mA |
| Working Peak Reverse Voltage (VRM) | 50 V |
| Maximum Reverse Leakage Current (IR) @ VR | 200 nA |
| Maximum Capacitance (CT) @ VR = 0 V, f = 1.0 MHz | 2.0 pF |
| Package | Ceramic Surface Mount (DO-213AA) |
| Terminals | Gold plating over nickel under plate |
| Weight | Approximately 0.04 grams |
Key Features
- Ceramic encased for high reliability and durability.
- Military-grade qualifications: JAN, JANTX, JANTXV, and JANS levels.
- Low forward voltage drop (VF) of 0.41 V @ 1 mA.
- High reverse voltage rating of up to 70 V.
- Low reverse leakage current of 200 nA.
- Available in various configurations: unidirectional, common anode, common cathode, and doubler polarities.
- Gold-plated terminals over nickel under plate for reliable connections.
- Tape and reel packaging option available.
Applications
The 1N5711UB Schottky diode is suitable for a wide range of high-reliability applications, including:
- Military and aerospace systems.
- High-frequency switching circuits.
- RF and microwave applications.
- Power supply and rectifier circuits.
- High-speed digital circuits.
Q & A
- What is the breakdown voltage of the 1N5711UB Schottky diode?
The breakdown voltage (VBR) of the 1N5711UB is 70 V at 10 µA.
- What is the maximum forward voltage of the 1N5711UB?
The maximum forward voltage (VF) is 0.41 V at 1 mA and 1.0 V at 15 mA.
- What is the working peak reverse voltage of the 1N5711UB?
The working peak reverse voltage (VRM) is 50 V.
- What is the maximum reverse leakage current of the 1N5711UB?
The maximum reverse leakage current (IR) is 200 nA.
- What is the package type of the 1N5711UB?
The 1N5711UB is available in a ceramic surface mount package (DO-213AA).
- What are the terminal materials of the 1N5711UB?
The terminals are gold-plated over a nickel under plate.
- Is the 1N5711UB RoHS compliant?
No, the 1N5711UB is not RoHS compliant.
- What are the reliability levels of the 1N5711UB?
The 1N5711UB is qualified to MIL-PRF-19500/444 standards, including JAN, JANTX, JANTXV, and JANS reliability levels.
- What are the typical applications of the 1N5711UB?
The 1N5711UB is used in military and aerospace systems, high-frequency switching circuits, RF and microwave applications, power supply and rectifier circuits, and high-speed digital circuits.
- Is tape and reel packaging available for the 1N5711UB?
