2N5415U4
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Microchip Technology 2N5415U4

Manufacturer No:
2N5415U4
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
POWER BJT
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The 2N5415U4 is a PNP silicon low-power transistor produced by Microchip Technology. This transistor is part of the 2N5415 through 2N5416 series, which are known for their high reliability and military qualifications. The 2N5415U4 is specifically designed for low-power applications that require high-frequency switching and is available in a surface mount U4 package. It is compliant with various military standards, including JAN, JANTX, JANTXV, and JANS levels, making it suitable for high-reliability applications.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 200 V
Collector-Base Voltage VCBO 200 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC 1.0 A
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance Junction-to-Ambient RӨJA 145 °C/W
Thermal Resistance Junction-to-Case RӨJC 12 °C/W
Total Power Dissipation at TA = +25 °C PT 1 W

Key Features

  • JEDEC registered 2N5415 through 2N5416 series.
  • JAN, JANTX, JANTXV, and JANS qualifications available per MIL-PRF-19500/485.
  • RoHS compliant.
  • Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid.
  • Gold over nickel plated surface mount terminations.
  • Low package profile, suitable for surface mount applications.

Applications

  • General purpose transistors for low power applications requiring high frequency switching.
  • Military and other high-reliability applications due to its military qualifications.
  • Low package profile makes it ideal for applications where space is limited.

Q & A

  1. What is the collector-emitter voltage rating of the 2N5415U4 transistor?

    The collector-emitter voltage rating of the 2N5415U4 transistor is 200 V.

  2. What are the military qualifications of the 2N5415U4 transistor?

    The 2N5415U4 transistor is qualified to JAN, JANTX, JANTXV, and JANS levels per MIL-PRF-19500/485.

  3. What is the maximum collector current of the 2N5415U4 transistor?

    The maximum collector current of the 2N5415U4 transistor is 1.0 A.

  4. What is the operating and storage junction temperature range of the 2N5415U4 transistor?

    The operating and storage junction temperature range of the 2N5415U4 transistor is -65 to +200 °C.

  5. Is the 2N5415U4 transistor RoHS compliant?

    Yes, the 2N5415U4 transistor is RoHS compliant.

  6. What type of package does the 2N5415U4 transistor come in?

    The 2N5415U4 transistor comes in a surface mount U4 package.

  7. What are some typical applications of the 2N5415U4 transistor?

    The 2N5415U4 transistor is typically used in general purpose low power applications requiring high frequency switching and in military and other high-reliability applications.

  8. What is the thermal resistance junction-to-ambient of the 2N5415U4 transistor?

    The thermal resistance junction-to-ambient of the 2N5415U4 transistor is 145 °C/W).

  9. What is the total power dissipation of the 2N5415U4 transistor at TA = +25 °C?

    The total power dissipation of the 2N5415U4 transistor at TA = +25 °C is 1 W).

  10. How is the 2N5415U4 transistor marked?

    The 2N5415U4 transistor is marked with the part number, date code, and manufacturer’s ID).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):200 V
Vce Saturation (Max) @ Ib, Ic:2V @ 5mA, 50mA
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:1 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-SMD, No Lead
Supplier Device Package:U4
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