1N4148UR-1E3/TR
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Microchip Technology 1N4148UR-1E3/TR

Manufacturer No:
1N4148UR-1E3/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Description:
SIGNAL/COMPUTER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148UR-1E3/TR is a high-performance switching/signal diode produced by Microchip Technology. This diode is known for its fast switching speeds and low capacitance, making it suitable for a variety of high-speed applications. It is RoHS compliant and also available in non-RoHS compliant forms for military-grade products. The diode features internal metallurgical bonded construction and is hermetically sealed in a double-plug DO-213AA package.

Key Specifications

Parameter Symbol Min Typ Max Unit
Forward Voltage V_F 0.8 1.2 V
Junction Capacitance C_J 4 pF
Reverse Breakdown Voltage V_BR 75 100 V
Reverse Current I_R 0.02 µA
Reverse Recovery Time t_rr 5 20 ns
Forward Surge Peak Current I_FSM 2 A
Junction Temperature T_J -65 175 °C
Output Current I_OUT 0.2 A
Thermal Resistance, Junction to Ambient R_θJA 325 °C/W
Thermal Resistance, Junction to Lead R_θJL 250 °C/W

Key Features

  • Fast switching speeds with a reverse recovery time as low as 5 ns.
  • Low capacitance of 4 pF, making it suitable for high-speed applications.
  • Hermetically sealed in a double-plug DO-213AA package.
  • RoHS compliant, with non-RoHS compliant versions available for military-grade products.
  • Internal metallurgical bonded construction for reliability.
  • Maximum forward voltage of 1.2 V and maximum forward surge peak current of 2 A.

Applications

  • High-speed switching applications.
  • Detectors and transient OR'ing circuits.
  • Logic arrays and blocking diodes.
  • Low-capacitance steering diodes.
  • General-purpose signal and switching applications.

Q & A

  1. What is the maximum reverse breakdown voltage of the 1N4148UR-1E3/TR diode?

    The maximum reverse breakdown voltage is 100 V.

  2. What is the typical junction capacitance of this diode?

    The typical junction capacitance is 4 pF.

  3. What is the reverse recovery time of the 1N4148UR-1E3/TR diode?

    The reverse recovery time is as low as 5 ns.

  4. Is the 1N4148UR-1E3/TR diode RoHS compliant?

    Yes, it is RoHS compliant, with non-RoHS compliant versions available for military-grade products.

  5. What is the maximum forward surge peak current of this diode?

    The maximum forward surge peak current is 2 A).

  6. What is the typical forward voltage of the 1N4148UR-1E3/TR diode?

    The typical forward voltage is 0.8 V to 1.2 V).

  7. What are the common applications of the 1N4148UR-1E3/TR diode?

    Common applications include high-speed switching, detectors, transient OR'ing, logic arrays, and low-capacitance steering diodes).

  8. What is the package type of the 1N4148UR-1E3/TR diode?

    The diode is packaged in a double-plug DO-213AA package).

  9. What is the thermal resistance, junction to ambient, of this diode?

    The thermal resistance, junction to ambient, is 325 °C/W).

  10. What is the junction temperature range of the 1N4148UR-1E3/TR diode?

    The junction temperature range is -65 °C to 175 °C).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):20 ns
Current - Reverse Leakage @ Vr:500 nA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AA
Supplier Device Package:DO-213AA
Operating Temperature - Junction:-65°C ~ 175°C
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