1N5711E3
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Microchip Technology 1N5711E3

Manufacturer No:
1N5711E3
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
DIODE SMALL-SIGNAL SCHOTTKY
Delivery:
Payment:
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Product Introduction

Overview

The 1N5711E3 is a small signal Schottky diode manufactured by Microchip Technology. This diode is designed for high-frequency applications, particularly in the UHF/VHF range, and is known for its low turn-on voltage and ultrafast switching capabilities. It is widely used in detection and pulse applications due to its high breakdown voltage and low forward voltage drop.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 70 V
IF (Forward Continuous Current) at Ta = 25°C 15 mA
Ptot (Power Dissipation) at Ta = 25°C 430 mW
Tstg (Storage and Junction Temperature Range) -65 to 200 °C
TL (Maximum Lead Temperature for Soldering during 10s at 4mm from Case) 230 °C
VF (Forward Voltage) at IF = 15mA 1 V
IR (Reverse Leakage Current) at VR = 50V 0.2 µA
C (Capacitance) at VR = 0V, f = 1MHz 2 pF

Key Features

  • Low forward voltage drop (VF = 1V at IF = 15mA)
  • Ultrafast switching capabilities
  • High breakdown voltage (VRRM = 70V)
  • Low reverse leakage current (IR = 0.2µA at VR = 50V)
  • Low capacitance (C = 2pF at VR = 0V, f = 1MHz)
  • Through-hole mounting (DO-35, DO-204AH packages)
  • Operating temperature range: -65°C to 200°C

Applications

  • High-frequency detection and pulse applications
  • UHF/VHF detectors
  • Switching and rectification in high-speed circuits
  • General-purpose Schottky diode applications requiring low forward voltage drop and fast switching times

Q & A

  1. What is the repetitive peak reverse voltage of the 1N5711E3? The repetitive peak reverse voltage (VRRM) is 70V.
  2. What is the forward continuous current rating of the 1N5711E3 at 25°C? The forward continuous current (IF) is 15mA at Ta = 25°C.
  3. What is the maximum power dissipation of the 1N5711E3 at 25°C? The maximum power dissipation (Ptot) is 430mW at Ta = 25°C.
  4. What is the storage and junction temperature range of the 1N5711E3? The storage and junction temperature range is -65°C to 200°C.
  5. What is the maximum lead temperature for soldering the 1N5711E3? The maximum lead temperature for soldering is 230°C during 10 seconds at 4mm from the case.
  6. What is the forward voltage drop of the 1N5711E3 at 15mA? The forward voltage drop (VF) is 1V at IF = 15mA.
  7. What is the reverse leakage current of the 1N5711E3 at 50V? The reverse leakage current (IR) is 0.2µA at VR = 50V.
  8. What is the capacitance of the 1N5711E3 at 0V and 1MHz? The capacitance (C) is 2pF at VR = 0V and f = 1MHz.
  9. In what packages is the 1N5711E3 available? The 1N5711E3 is available in DO-35 and DO-204AH packages.
  10. What are the typical applications of the 1N5711E3? Typical applications include high-frequency detection, UHF/VHF detectors, and general-purpose Schottky diode applications requiring low forward voltage drop and fast switching times.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io):33mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 50 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 150°C
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