IR2110STRPBF
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Infineon Technologies IR2110STRPBF

Manufacturer No:
IR2110STRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 16SOIC
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The IR2110STRPBF, produced by Infineon Technologies, is a high-voltage, high-speed power MOSFET and IGBT driver IC. This component is part of the EiceDRIVER™ family and is designed for high-side and low-side gate driving with shutdown functionality. It is available in a 16 Lead SOIC package and is suitable for driving N-channel power MOSFETs and IGBTs in high-side configurations up to 500 volts.

Key Specifications

ParameterValueUnits
Maximum High-Side Floating Supply Voltage500V
Gate Drive Supply Range10 to 20V
Logic Supply Range3.3 to 20V
Logic Input Voltage3.3 to 20V
Output Current (Source/Sink)2.5 A / 2.5 AA
Turn-on Propagation Delay120 ns (typ.)ns
Turn-off Propagation Delay94 ns (typ.)ns
Delay Matching10 ns (max.)ns
Ambient Temperature Range-40 to 125°C

Key Features

  • Floating channel designed for bootstrap operation
  • Fully operational to +500 V (or +600 V for IR2113S version)
  • dV/dt immune
  • Undervoltage lockout for both channels
  • 3.3 V logic compatible
  • CMOS Schmitt-triggered inputs with pull-down
  • Cycle by cycle edge-triggered shutdown logic
  • Matched propagation delay for both channels
  • Outputs in phase with inputs
  • Logic and power ground ±5 V offset

Applications

The IR2110STRPBF is widely used in various high-voltage applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial automation and control systems
  • Renewable energy systems such as solar and wind power inverters
  • High-power audio amplifiers and other high-voltage electronic devices

Q & A

  1. What is the maximum high-side floating supply voltage of the IR2110STRPBF?
    The maximum high-side floating supply voltage is 500 V.
  2. What is the gate drive supply range for this IC?
    The gate drive supply range is from 10 to 20 V.
  3. Is the IR2110STRPBF compatible with 3.3 V logic?
    Yes, it is compatible with 3.3 V logic.
  4. What is the typical turn-on propagation delay of the IR2110STRPBF?
    The typical turn-on propagation delay is 120 ns.
  5. Does the IR2110STRPBF have undervoltage lockout for both channels?
    Yes, it has undervoltage lockout for both channels.
  6. What is the ambient temperature range for the IR2110STRPBF?
    The ambient temperature range is from -40 to 125 °C.
  7. Is the IR2110STRPBF dV/dt immune?
    Yes, it is dV/dt immune.
  8. What type of inputs does the IR2110STRPBF have?
    The IC has CMOS Schmitt-triggered inputs with pull-down.
  9. Does the IR2110STRPBF support cycle by cycle edge-triggered shutdown logic?
    Yes, it supports cycle by cycle edge-triggered shutdown logic.
  10. Are the outputs of the IR2110STRPBF in phase with the inputs?
    Yes, the outputs are in phase with the inputs.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:3.3V ~ 20V
Logic Voltage - VIL, VIH:6V, 9.5V
Current - Peak Output (Source, Sink):2A, 2A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):500 V
Rise / Fall Time (Typ):25ns, 17ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:16-SOIC (0.295", 7.50mm Width)
Supplier Device Package:16-SOIC
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Similar Products

Part Number IR2110STRPBF IR2111STRPBF IR2112STRPBF IR2117STRPBF IR2113STRPBF IR2130STRPBF IR2118STRPBF IR2010STRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active Active
Driven Configuration Half-Bridge Half-Bridge High-Side or Low-Side High-Side Half-Bridge Half-Bridge High-Side Half-Bridge
Channel Type Independent Synchronous Independent Single Independent 3-Phase Single Independent
Number of Drivers 2 2 2 1 2 6 1 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 3.3V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 3.3V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V 8.3V, 12.6V 6V, 9.5V 6V, 9.5V 6V, 9.5V 0.8V, 2.2V 6V, 9.5V 6V, 9.5V
Current - Peak Output (Source, Sink) 2A, 2A 250mA, 500mA 250mA, 500mA 250mA, 500mA 2A, 2A 250mA, 500mA 250mA, 500mA 3A, 3A
Input Type Non-Inverting Non-Inverting Non-Inverting Non-Inverting Non-Inverting Inverting Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 500 V 600 V 600 V 600 V 600 V 600 V 600 V 200 V
Rise / Fall Time (Typ) 25ns, 17ns 80ns, 40ns 80ns, 40ns 80ns, 40ns 25ns, 17ns 80ns, 35ns 80ns, 40ns 10ns, 15ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width) 8-SOIC (0.154", 3.90mm Width) 16-SOIC (0.295", 7.50mm Width) 8-SOIC (0.154", 3.90mm Width) 16-SOIC (0.295", 7.50mm Width) 28-SOIC (0.295", 7.50mm Width) 8-SOIC (0.154", 3.90mm Width) 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC 8-SOIC 16-SOIC 8-SOIC 16-SOIC 28-SOIC 8-SOIC 16-SOIC

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