BCX51E6327
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Infineon Technologies BCX51E6327

Manufacturer No:
BCX51E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX51E6327 is a PNP medium power bipolar junction transistor (BJT) produced by Infineon Technologies. This transistor is part of the BCX51 series, known for its high current and power dissipation capabilities. It is packaged in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package, which enhances thermal and electrical conductivity due to its exposed heatsink.

Key Specifications

Parameter Value Unit
Type PNP medium power transistor -
Package SOT89 (SC-62) -
Collector-Emitter Voltage (VCEO) -45 V
Collector Current (IC) -1000 mA
DC Current Gain (hFE) 100 - 250 -
Power Dissipation (Ptot) 500 mW
Junction Temperature (TJ) 150 °C
AEC-Q101 Qualified Yes -

Key Features

  • High current capability
  • Three current gain selections
  • High power dissipation capability
  • Exposed heatsink for excellent thermal and electrical conductivity
  • AEC-Q101 qualified, making it suitable for automotive applications

Applications

  • Linear voltage regulators
  • High-side switches
  • Battery-driven devices
  • Power management
  • MOSFET drivers
  • Amplifiers
  • Automotive and industrial applications

Q & A

  1. What is the BCX51E6327 transistor?

    The BCX51E6327 is a PNP medium power bipolar junction transistor produced by Infineon Technologies.

  2. What package type does the BCX51E6327 use?

    The BCX51E6327 is packaged in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.

  3. What is the maximum collector current of the BCX51E6327?

    The maximum collector current (IC) is -1000 mA.

  4. What is the maximum collector-emitter voltage (VCEO) of the BCX51E6327?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  5. Is the BCX51E6327 AEC-Q101 qualified?

    Yes, the BCX51E6327 is AEC-Q101 qualified, making it suitable for automotive applications.

  6. What are some common applications of the BCX51E6327?

    Common applications include linear voltage regulators, high-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers.

  7. What is the power dissipation capability of the BCX51E6327?

    The power dissipation capability (Ptot) is 500 mW.

  8. What is the junction temperature (TJ) of the BCX51E6327?

    The junction temperature (TJ) is 150 °C.

  9. Does the BCX51E6327 have an exposed heatsink?

    Yes, the BCX51E6327 has an exposed heatsink for excellent thermal and electrical conductivity.

  10. What industries can the BCX51E6327 be used in?

    The BCX51E6327 can be used in various industries including automotive, industrial, power, computing, consumer, mobile, and wearables.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BCX51E6327 BCX54E6327 BCX53E6327 BCX55E6327 BCX52E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active
Transistor Type - - - - -
Current - Collector (Ic) (Max) - - - - -
Voltage - Collector Emitter Breakdown (Max) - - - - -
Vce Saturation (Max) @ Ib, Ic - - - - -
Current - Collector Cutoff (Max) - - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - - - -
Power - Max - - - - -
Frequency - Transition - - - - -
Operating Temperature - - - - -
Mounting Type - - - - -
Package / Case - - - - -
Supplier Device Package - - - - -

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