BAW56W-E6327
  • Share:

Infineon Technologies BAW56W-E6327

Manufacturer No:
BAW56W-E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
HIGH SPEED SWITCHING DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW56W-E6327 is a high-speed switching diode produced by Infineon Technologies. It is designed for high-speed switching applications and features a common anode configuration. This diode is part of the BAW56 series, known for its reliability and efficiency in various industrial and automotive applications. The BAW56W-E6327 is RoHS compliant and qualified according to AEC Q101 standards, ensuring high reliability and performance in demanding environments.

Key Specifications

ParameterValue
Peak Reverse Voltage80 V
Maximum Forward Current200 mA
Maximum Surge Current4.5 A
Forward Voltage (Vf)1.25 V
Reverse Current (Ir)2.5 uA
Recovery Time4 ns
Minimum Operating Temperature-65°C
Maximum Operating Temperature+150°C
Package / CaseSOT-323
ConfigurationDual Common Anode
Power Dissipation (Pd)250 mW

Key Features

  • High-speed switching capabilities, making it suitable for applications requiring fast switching times.
  • Common anode configuration, which is beneficial for certain circuit designs.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • Qualified according to AEC Q101 standards, indicating high reliability for automotive and industrial applications.
  • Low forward voltage (Vf) of 1.25 V, reducing power losses.
  • Fast recovery time of 4 ns, enhancing the diode's performance in high-frequency applications.

Applications

The BAW56W-E6327 is versatile and can be used in a variety of applications, including:

  • High-speed switching circuits in industrial and automotive systems.
  • Power supply and rectifier circuits where fast recovery times are crucial.
  • Automotive electronics, such as in vehicle control systems and safety features.
  • General-purpose switching and rectification in electronic devices.

Q & A

  1. What is the peak reverse voltage of the BAW56W-E6327?
    The peak reverse voltage is 80 V.
  2. What is the maximum forward current of the BAW56W-E6327?
    The maximum forward current is 200 mA.
  3. What is the recovery time of the BAW56W-E6327?
    The recovery time is 4 ns.
  4. Is the BAW56W-E6327 RoHS compliant?
    Yes, the BAW56W-E6327 is Pb-free and RoHS compliant.
  5. What is the operating temperature range of the BAW56W-E6327?
    The operating temperature range is from -65°C to +150°C.
  6. What package type does the BAW56W-E6327 come in?
    The BAW56W-E6327 comes in a SOT-323 package.
  7. What is the configuration of the BAW56W-E6327?
    The configuration is dual common anode.
  8. What are some typical applications of the BAW56W-E6327?
    Typical applications include high-speed switching circuits, automotive electronics, and general-purpose switching and rectification.
  9. Is the BAW56W-E6327 qualified according to any specific standards?
    Yes, it is qualified according to AEC Q101 standards.
  10. What is the forward voltage (Vf) of the BAW56W-E6327?
    The forward voltage (Vf) is 1.25 V.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:150 nA @ 70 V
Operating Temperature - Junction:150°C
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3
0 Remaining View Similar

In Stock

-
325

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAW56W-E6327 BAW56WE6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Common Anode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 150 nA @ 70 V 150 nA @ 70 V
Operating Temperature - Junction 150°C 150°C (Max)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323-3 SOT-323

Related Product By Categories

BAW56S,115
BAW56S,115
Nexperia USA Inc.
DIODE ARRAY GP 90V 250MA 6TSSOP
BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT323
SBAV99WT1G
SBAV99WT1G
onsemi
DIODE ARRAY GP 100V 215MA SOT323
BAV70HDWQ-13
BAV70HDWQ-13
Diodes Incorporated
DIODE FS 100V 125MA SOT363
STTH3002CG
STTH3002CG
STMicroelectronics
DIODE ARRAY GP 200V 15A D2PAK
BAV99S/MI115
BAV99S/MI115
NXP USA Inc.
RECTIFIER DIODE
MBR2060CT-G
MBR2060CT-G
Comchip Technology
DIODE ARRAY SCHOTTKY 60V TO220AB
BAS40-04E6327
BAS40-04E6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BAS70-04W-AQ
BAS70-04W-AQ
Diotec Semiconductor
SchottkyD, 70V, 0.07A
BAV99/DG/B4VL
BAV99/DG/B4VL
Nexperia USA Inc.
DIODE SWITCHING TO-236AB
BAV99W/DG/B3F
BAV99W/DG/B3F
Nexperia USA Inc.
DIODE ARRAY GP 100V 150MA SC70
BAV99HYFHT116
BAV99HYFHT116
Rohm Semiconductor
HIGH SPEED SWITCHING, 80V, 215MA

Related Product By Brand

BAS70-06E6433
BAS70-06E6433
Infineon Technologies
SCHOTTKY DIODE - HIGH SPEED SWIT
BAS4004E6327HTSA1
BAS4004E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV70WH6327XTSA1
BAV70WH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS 40-06 B5003
BAS 40-06 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BCX5516H6433XTMA1
BCX5516H6433XTMA1
Infineon Technologies
TRANS NPN 60V 1A SOT89
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
BCX5316E6327HTSA1
BCX5316E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
IRFB4227PBF
IRFB4227PBF
Infineon Technologies
MOSFET N-CH 200V 65A TO220AB
IRS21867STRPBF
IRS21867STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
FM28V100-TG
FM28V100-TG
Infineon Technologies
IC FRAM 1MBIT PARALLEL 32TSOP I