BAT5406E6327HTSA1
  • Share:

Infineon Technologies BAT5406E6327HTSA1

Manufacturer No:
BAT5406E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 30V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT5406E6327HTSA1 is a Silicon Schottky Diode produced by Infineon Technologies. This diode is part of the BAT54 series, known for its low-loss, fast-recovery characteristics, making it suitable for various applications such as meter protection, bias isolation, and clamping. The device is guard ring protected, ensuring enhanced reliability and performance. It also features a low forward voltage and is packaged in a Pb-free (RoHS compliant) SOT23 package.

Key Specifications

Parameter Symbol Value Unit
Diode reverse voltage VR 30 V
Forward current IF 200 mA
Non-repetitive peak surge forward current (t ≤ 10 ms) IFSM 600 mA
Repetitive peak forward current (tp ≤ 1 s, δ = 0.5) IFRM 300 mA
Total power dissipation (TS ≤ 94 °C for BAT54) Ptot 230 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -65 to 150 °C
Forward voltage (IF = 0.1 mA to 100 mA) VF 240 to 800 mV
Reverse recovery time trr ≤ 5 ns
Diode capacitance (VR = 1 V, f = 1 MHz) CT ≤ 10 pF

Key Features

  • Low-loss and fast-recovery characteristics
  • Guard ring protected for enhanced reliability
  • Low forward voltage
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 standards (except BAT54-02LRH)

Applications

  • Meter protection
  • Bias isolation
  • Clamping applications
  • General-purpose switching and rectification in low-voltage, high-frequency applications

Q & A

  1. What is the BAT5406E6327HTSA1 used for?

    The BAT5406E6327HTSA1 is used for low-loss, fast-recovery applications such as meter protection, bias isolation, and clamping.

  2. What is the maximum reverse voltage of the BAT5406E6327HTSA1?

    The maximum reverse voltage (VR) is 30 V.

  3. What is the forward current rating of the BAT5406E6327HTSA1?

    The forward current (IF) is rated at 200 mA.

  4. What is the total power dissipation of the BAT5406E6327HTSA1?

    The total power dissipation (Ptot) is 230 mW.

  5. What is the junction temperature range of the BAT5406E6327HTSA1?

    The junction temperature (Tj) range is up to 150 °C.

  6. Is the BAT5406E6327HTSA1 RoHS compliant?
  7. What is the reverse recovery time of the BAT5406E6327HTSA1?

    The reverse recovery time (trr) is ≤ 5 ns.

  8. What is the diode capacitance of the BAT5406E6327HTSA1?

    The diode capacitance (CT) is ≤ 10 pF at VR = 1 V and f = 1 MHz.

  9. What are the typical applications of the BAT5406E6327HTSA1?

    Typical applications include meter protection, bias isolation, clamping, and general-purpose switching and rectification in low-voltage, high-frequency applications.

  10. Is the BAT5406E6327HTSA1 qualified according to automotive standards?

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.49
324

Please send RFQ , we will respond immediately.

Same Series
BAT5406E6327HTSA1
BAT5406E6327HTSA1
DIODE ARRAY SCHOTTKY 30V SOT23
BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
DIODE ARRAY SCHOTTKY 30V SOT323
BAT5405E6327HTSA1
BAT5405E6327HTSA1
DIODE ARRAY SCHOTTKY 30V SOT23
BAT5406WH6327XTSA1
BAT5406WH6327XTSA1
DIODE ARRAY SCHOTTKY 30V SOT323
BAT 54-04 B5003
BAT 54-04 B5003
DIODE ARRAY SCHOTTKY 30V SOT23
BAT 54-05 B5003
BAT 54-05 B5003
DIODE ARRAY SCHOTTKY 30V SOT23
BAT 54-06 B5003
BAT 54-06 B5003
DIODE ARRAY SCHOTTKY 30V SOT23
BAT 54-04W E6327
BAT 54-04W E6327
DIODE ARRAY SCHOTTKY 30V SOT323
BAT54E6327HTSA1
BAT54E6327HTSA1
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT5402LRHE6327XTSA1
BAT5402LRHE6327XTSA1
DIODE SCHOTTKY 30V 200MA TSLP-2
BAT 54-02V E6327
BAT 54-02V E6327
DIODE SCHOTTKY 30V 200MA SC79-2
BAT 54W E6327
BAT 54W E6327
DIODE SCHOTTKY 30V 200MA SOT323

Similar Products

Part Number BAT5406E6327HTSA1 BAT5404E6327HTSA1 BAT5405E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Series Connection 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT23

Related Product By Categories

BAT54C,215
BAT54C,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
BAW56WT1G
BAW56WT1G
onsemi
DIODE ARRAY GP 70V 200MA SC70-3
BAT54ADW-7-F
BAT54ADW-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
SB05W05C-TB-E
SB05W05C-TB-E
onsemi
DIODE ARRAY SCHOTTKY 50V 3CP
SBAV70LT3G
SBAV70LT3G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAV99BRW-TP
BAV99BRW-TP
Micro Commercial Co
DIODE ARRAY GP 75V 150MA SOT363
MMBD1204_D87Z
MMBD1204_D87Z
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAW56SH6727XTSA1
BAW56SH6727XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAW56W/ZLF
BAW56W/ZLF
Nexperia USA Inc.
DIODE ARRAY GEN PURP 90V SOT323
MBR2545CT-7HE3/45
MBR2545CT-7HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
BAT54A-QVL
BAT54A-QVL
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAV199HMT116
BAV199HMT116
Rohm Semiconductor
DIODE ARR GEN PUR 80V 215MA SSD3

Related Product By Brand

BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS70-06E6433
BAS70-06E6433
Infineon Technologies
SCHOTTKY DIODE - HIGH SPEED SWIT
BAS40-02LE6327
BAS40-02LE6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BAS4002S02LRHE6327XTSA1
BAS4002S02LRHE6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 40V 200MA TSLP-2
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BC858BE6327HTSA1
BC858BE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT-23
BCX5316E6327HTSA1
BCX5316E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
BSS123E6327
BSS123E6327
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
BTS5030-2EKA
BTS5030-2EKA
Infineon Technologies
BTS5030 - PROFET - SMART HIGH SI
BTS428L2XT
BTS428L2XT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5