BAT 54-02V E6327
  • Share:

Infineon Technologies BAT 54-02V E6327

Manufacturer No:
BAT 54-02V E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SC79-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT 54-02V E6327 is a Schottky diode array produced by Infineon Technologies. This component is designed for high-performance applications requiring low forward voltage drop and fast switching times. It is part of Infineon's extensive range of discrete semiconductor products, known for their reliability and efficiency.

Key Specifications

Parameter Value
Manufacturer Part Number BAT 54-02V E6327
Manufacturer Infineon Technologies
Description DIODE SCHOTTKY 30V 200MA SC79-2
Voltage - Forward (Vf) (Max) @ If 800mV @ 100mA
Voltage - DC Reverse (Vr) (Max) 30V
Package / Case PG-SC79-2
Operating Temperature - Junction 150°C (Max)
Mounting Type Surface Mount
Diode Type Schottky
Diode Configuration 1 Pair Series Connection
Current - Reverse Leakage @ Vr 2µA @ 25V
Current - Average Rectified (Io) (per Diode) 200mA (DC)
Reverse Recovery Time (trr) 5ns

Key Features

  • Low Forward Voltage Drop: The BAT 54-02V E6327 features a low forward voltage drop of 800mV at 100mA, making it suitable for applications where power efficiency is crucial.
  • Fast Switching Times: With a reverse recovery time of 5ns, this diode array is ideal for high-frequency applications.
  • High Current Capability: Each diode can handle an average rectified current of 200mA, making it suitable for a variety of power management and signal processing tasks.
  • Compact Package: The PG-SC79-2 package is compact and suitable for surface mount technology, allowing for dense board designs.
  • High Operating Temperature: The component can operate up to a junction temperature of 150°C, ensuring reliability in demanding environments.

Applications

  • Power Management: Suitable for voltage regulation, power supply circuits, and DC-DC converters due to its low forward voltage drop and high current handling.
  • Signal Processing: Used in signal rectification, filtering, and protection circuits in various electronic devices.
  • Automotive Electronics: Given its robust specifications, it is often used in automotive systems for power management and signal processing.
  • Industrial Control Systems: Employed in industrial control systems for reliable and efficient power management and signal handling.

Q & A

  1. What is the maximum forward voltage drop of the BAT 54-02V E6327?

    The maximum forward voltage drop is 800mV at 100mA.

  2. What is the maximum DC reverse voltage of the BAT 54-02V E6327?

    The maximum DC reverse voltage is 30V.

  3. What is the package type of the BAT 54-02V E6327?

    The package type is PG-SC79-2.

  4. What is the maximum junction temperature of the BAT 54-02V E6327?

    The maximum junction temperature is 150°C.

  5. What is the reverse recovery time of the BAT 54-02V E6327?

    The reverse recovery time is 5ns.

  6. What is the average rectified current per diode of the BAT 54-02V E6327?

    The average rectified current per diode is 200mA (DC).

  7. What type of diode is the BAT 54-02V E6327?

    The BAT 54-02V E6327 is a Schottky diode array.

  8. What is the typical application of the BAT 54-02V E6327?

    It is typically used in power management, signal processing, automotive electronics, and industrial control systems.

  9. How many diodes are in the BAT 54-02V E6327?

    The BAT 54-02V E6327 is a diode array with a pair of diodes in series connection.

  10. What is the mounting type of the BAT 54-02V E6327?

    The mounting type is surface mount.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:PG-SC79-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
216

Please send RFQ , we will respond immediately.

Same Series
BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
DIODE ARRAY SCHOTTKY 30V SOT323
BAT5405WH6327XTSA1
BAT5405WH6327XTSA1
DIODE ARRAY SCHOTTKY 30V SOT323
BAT5405E6327HTSA1
BAT5405E6327HTSA1
DIODE ARRAY SCHOTTKY 30V SOT23
BAT5406WH6327XTSA1
BAT5406WH6327XTSA1
DIODE ARRAY SCHOTTKY 30V SOT323
BAT 54-05 B5003
BAT 54-05 B5003
DIODE ARRAY SCHOTTKY 30V SOT23
BAT 54-06 B5003
BAT 54-06 B5003
DIODE ARRAY SCHOTTKY 30V SOT23
BAT 54-04W E6327
BAT 54-04W E6327
DIODE ARRAY SCHOTTKY 30V SOT323
BAT5405WE6327HTSA1
BAT5405WE6327HTSA1
DIODE ARRAY SCHOTTKY 30V SOT323
BAT5402VH6327XTSA1
BAT5402VH6327XTSA1
DIODE SCHOTTKY 30V 200MA SC79-2
BAT5402LRHE6327XTSA1
BAT5402LRHE6327XTSA1
DIODE SCHOTTKY 30V 200MA TSLP-2
BAT 54-02V E6327
BAT 54-02V E6327
DIODE SCHOTTKY 30V 200MA SC79-2
BAT54WH6327XTSA1
BAT54WH6327XTSA1
DIODE SCHOTTKY 30V 200MA SOT323

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY

Related Product By Brand

BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BCX5310E6327
BCX5310E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC 817-25W E6327
BC 817-25W E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BCX52E6327HTSA1
BCX52E6327HTSA1
Infineon Technologies
TRANS PNP 60V 1A SOT89
BC 807-25 E6327
BC 807-25 E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
2N7002L6327HTSA1
2N7002L6327HTSA1
Infineon Technologies
MOSFET N-CH 60V 300MA SOT23-3
IKW50N60T
IKW50N60T
Infineon Technologies
IKW50N60 - DISCRETE IGBT WITH AN
SAK-TC1796-256F150EBC
SAK-TC1796-256F150EBC
Infineon Technologies
32-BIT RISC FLASH MCU
BTS70302EPAXUMA1
BTS70302EPAXUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 TSDSO-14