BC860B
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Diotec Semiconductor BC860B

Manufacturer No:
BC860B
Manufacturer:
Diotec Semiconductor
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC860B is a general-purpose PNP bipolar transistor manufactured by Diotec Semiconductor. It is packaged in the SOT-23 (TO-236) format, making it suitable for a variety of applications where space is limited. This transistor is designed for control and signal processing tasks, offering a robust set of specifications that ensure reliable performance in various electronic circuits.

Key Specifications

Parameter Value
Transistor Type PNP Bipolar Transistor
Package SOT-23 (TO-236)
Collector-Emitter Voltage (VCE) -45 V
Collector Current (IC) -100 mA
Power Dissipation (Ptot) 0.25 W
Maximum Junction Temperature (Tj) 150°C
DC Current Gain (hFE) 180-290-520 (Group A, B, C)
Collector-Emitter Saturation Voltage (VCEsat) 300-500 mV (depending on grade and conditions)
Base-Emitter Saturation Voltage (VBEsat) 700-900 mV (depending on conditions)
Gain-Bandwidth Product (fT) 100 MHz
Thermal Resistance Junction to Ambient (RthA) 625 K/W (commercial grade), 420 K/W (industrial/AEC-Q101 grade)

Key Features

  • General-purpose PNP bipolar transistor suitable for signal processing, switching, and amplification.
  • Available in three current gain groups (A, B, C) to cater to different application requirements.
  • Compliant with RoHS, REACH, and Conflict Minerals regulations.
  • AEC-Q101 qualified and compliant versions available for automotive applications.
  • High maximum junction temperature of 150°C, ensuring reliability in various operating conditions.
  • Low collector-emitter saturation voltage and base-emitter saturation voltage for efficient operation.

Applications

  • Signal processing and amplification in electronic circuits.
  • Switching applications where low saturation voltages are beneficial.
  • Automotive systems (with AEC-Q101 qualified versions).
  • LED driver circuits and other lighting applications.
  • General-purpose use in consumer electronics and industrial control systems.

Q & A

  1. What is the package type of the BC860B transistor?

    The BC860B transistor is packaged in the SOT-23 (TO-236) format.

  2. What is the maximum collector current of the BC860B transistor?

    The maximum collector current of the BC860B transistor is -100 mA.

  3. What are the typical applications of the BC860B transistor?

    The BC860B transistor is typically used in signal processing, switching, and amplification applications.

  4. Is the BC860B transistor compliant with automotive standards?

    Yes, the BC860B transistor has AEC-Q101 qualified and compliant versions for automotive applications.

  5. What is the maximum junction temperature of the BC860B transistor?

    The maximum junction temperature of the BC860B transistor is 150°C.

  6. What are the key regulatory compliances of the BC860B transistor?

    The BC860B transistor is compliant with RoHS, REACH, and Conflict Minerals regulations.

  7. What is the gain-bandwidth product (fT) of the BC860B transistor?

    The gain-bandwidth product (fT) of the BC860B transistor is 100 MHz.

  8. What are the different grades available for the BC860B transistor?

    The BC860B transistor is available in commercial, industrial, and AEC-Q101 qualified grades.

  9. How does the thermal resistance of the BC860B transistor vary by grade?

    The thermal resistance junction to ambient (RthA) is 625 K/W for commercial grade and 420 K/W for industrial/AEC-Q101 grade.

  10. What is the collector-emitter saturation voltage (VCEsat) of the BC860B transistor?

    The collector-emitter saturation voltage (VCEsat) of the BC860B transistor ranges from 300 to 500 mV depending on the grade and conditions.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC860B BC860C
Manufacturer Diotec Semiconductor Fairchild Semiconductor
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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