Overview
The BAS216WT is a small signal diode produced by Diotec Semiconductor. It is designed for high-speed switching and signal processing applications. This diode is packaged in a SOD-523 surface mount device (SMD) and is known for its very high switching speed, low junction capacitance, and low leakage current. The BAS216WT is compliant with RoHS (Restriction of Hazardous Substances) and REACH regulations, and it is also available in AEC-Q101 qualified versions for automotive applications.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Repetitive Peak Reverse Voltage | VRRM | 85 V | V |
Continuous Forward Current | IF | 250 mA | mA |
Non-Repetitive Peak Forward Surge Current (tp ≤ 1 s) | IFSM | 0.5 A | A |
Non-Repetitive Peak Forward Surge Current (tp ≤ 1 µs) | IFSM | 4 A | A |
Power Dissipation | Ptot | 150 mW | mW |
Junction Temperature | Tj | -55 to +150°C | °C |
Storage Temperature Range | Tstg | -55 to +150°C | °C |
Forward Voltage (IF = 1 mA) | VF | < 715 mV | mV |
Reverse Current (VR = 25 V, Tj = 25°C) | IR | < 30 nA | nA |
Reverse Recovery Time | trr | < 4 ns | ns |
Maximum Junction Capacitance (VR = 0 V, f = 1 MHz) | CT | 1.5 pF | pF |
Key Features
- Very high switching speed
- Low junction capacitance
- Low leakage current
- Compliant to RoHS (without exemption) and REACH regulations
- AEC-Q101 qualified versions available for automotive applications
- Small signal diode in SOD-523 package
- High reliability and stability in signal processing and high-speed switching applications
Applications
- Signal processing
- High-speed switching
- Rectifying
- Commercial and industrial applications
- Automotive applications (AEC-Q101 qualified versions)
Q & A
- What is the maximum repetitive peak reverse voltage of the BAS216WT diode?
The maximum repetitive peak reverse voltage (VRRM) is 85 V. - What is the continuous forward current rating of the BAS216WT?
The continuous forward current (IF) is 250 mA. - What is the non-repetitive peak forward surge current rating of the BAS216WT for a pulse duration of 1 µs?
The non-repetitive peak forward surge current (IFSM) for a pulse duration of 1 µs is 4 A. - What is the power dissipation limit of the BAS216WT?
The power dissipation (Ptot) is 150 mW. - What is the junction temperature range of the BAS216WT?
The junction temperature (Tj) range is -55 to +150°C. - What is the forward voltage drop of the BAS216WT at 1 mA forward current?
The forward voltage (VF) at 1 mA is less than 715 mV. - What is the reverse recovery time of the BAS216WT?
The reverse recovery time (trr) is less than 4 ns. - Is the BAS216WT compliant with RoHS and REACH regulations?
Yes, the BAS216WT is compliant with RoHS and REACH regulations. - What are the typical applications of the BAS216WT diode?
The typical applications include signal processing, high-speed switching, and rectifying in commercial, industrial, and automotive sectors. - Is the BAS216WT available in AEC-Q101 qualified versions?
Yes, the BAS216WT is available in AEC-Q101 qualified versions for automotive applications.