MMBT3904LP-7B
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Diodes Incorporated MMBT3904LP-7B

Manufacturer No:
MMBT3904LP-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904LP-7B is a high-performance NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is designed to offer high collector current and low power dissipation, making it suitable for a variety of electronic applications. The device is packaged in a compact X1-DFN1006-3 package, which is significantly smaller than the traditional SOT23 package, enhancing its suitability for space-constrained designs.

Key Specifications

ParameterValue
Collector-Base Voltage (BVCEO)40 V
Collector Current (IC)200 mA
Power Dissipation (PD)1000 mW
Package TypeX1-DFN1006-3
Package Footprint0.60 mm^2

Key Features

  • High collector current of 200 mA, making it suitable for applications requiring moderate to high current handling.
  • High collector-base voltage (BVCEO) of 40 V, providing robust performance in various voltage conditions.
  • Low power dissipation of 1000 mW, reducing thermal management requirements.
  • Compact X1-DFN1006-3 package, 13 times smaller than the SOT23 package, ideal for space-constrained designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The MMBT3904LP-7B transistor is versatile and can be used in a wide range of electronic applications, including:

  • General-purpose switching and amplification.
  • Audio amplifiers and signal processing circuits.
  • Automotive and industrial control systems.
  • Consumer electronics such as TVs, radios, and other audio equipment.
  • Low-power DC-DC converters and power management circuits.

Q & A

  1. What is the collector-base voltage (BVCEO) of the MMBT3904LP-7B transistor?
    The collector-base voltage (BVCEO) is 40 V.
  2. What is the maximum collector current (IC) of the MMBT3904LP-7B transistor?
    The maximum collector current (IC) is 200 mA.
  3. What is the power dissipation (PD) of the MMBT3904LP-7B transistor?
    The power dissipation (PD) is 1000 mW.
  4. What package type is used for the MMBT3904LP-7B transistor?
    The package type is X1-DFN1006-3.
  5. Is the MMBT3904LP-7B transistor RoHS compliant?
    Yes, the MMBT3904LP-7B transistor is RoHS compliant.
  6. What are the key advantages of the X1-DFN1006-3 package?
    The X1-DFN1006-3 package is 13 times smaller than the SOT23 package, making it ideal for space-constrained designs.
  7. In what types of applications is the MMBT3904LP-7B transistor commonly used?
    The MMBT3904LP-7B transistor is commonly used in general-purpose switching and amplification, audio amplifiers, automotive and industrial control systems, consumer electronics, and low-power DC-DC converters.
  8. How does the MMBT3904LP-7B transistor handle thermal management?
    The transistor has a low power dissipation of 1000 mW, which reduces thermal management requirements.
  9. Where can I find the datasheet and other technical documents for the MMBT3904LP-7B transistor?
    You can find the datasheet and other technical documents on websites such as Mouser Electronics, Digi-Key, and the official Diodes Incorporated website.
  10. What is the footprint of the MMBT3904LP-7B package?
    The package footprint is 0.60 mm^2.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:250 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-UFDFN
Supplier Device Package:X1-DFN1006-3
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Same Series
MMBT3904LP-7B
MMBT3904LP-7B
TRANS NPN 40V 0.2A 3DFN

Similar Products

Part Number MMBT3904LP-7B MMBT3906LP-7B MMBT3904LP-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - 50nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 250 mW 250 mW 250 mW
Frequency - Transition 300MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 3-UFDFN 3-UFDFN 3-UFDFN
Supplier Device Package X1-DFN1006-3 X1-DFN1006-3 X1-DFN1006-3

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