Overview
The MMBT3904LP-7 is a high-performance NPN small signal transistor manufactured by Diodes Incorporated. This transistor is designed for a wide range of applications requiring high reliability and compact packaging. It features a collector-emitter voltage (VCEO) of 40V, a high collector current (IC) of 200mA, and a power dissipation (PD) of up to 1000mW. The transistor is packaged in the X1-DFN1006-3 case, which has a footprint 13 times smaller than the SOT23 package, making it ideal for space-constrained designs. It is also fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for automotive applications.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Base Voltage | VCBO | 60 | V |
Collector-Emitter Voltage | VCEO | 40 | V |
Emitter-Base Voltage | VEBO | 6.0 | V |
Collector Current | IC | 200 | mA |
Peak Collector Current | ICM | 200 | mA |
Power Dissipation | PD | 1000 | mW |
Thermal Resistance, Junction to Ambient | RθJA | 310 | °C/W |
Frequency | 300 | MHz | |
Package Type | X1-DFN1006-3 | ||
Mounting Type | SMD |
Key Features
- High collector-emitter voltage (VCEO) of 40V and collector current (IC) of 200mA.
- High power dissipation of up to 1000mW.
- Compact X1-DFN1006-3 package with a footprint 13 times smaller than SOT23, minimizing off-board profile.
- Complementary PNP type: MMBT3906LP.
- Totally lead-free and fully RoHS compliant, halogen and antimony free.
- Qualified to AEC-Q101 standards for high reliability in automotive applications.
- Low thermal resistance, junction to ambient (RθJA) of 310°C/W.
Applications
- Automotive systems requiring high reliability and specific change control (AEC-Q101 qualified).
- General-purpose switching and amplification in consumer electronics.
- Industrial control systems where compact size and high performance are critical.
- Audio and video equipment requiring low noise and high current handling.
- Medical devices and equipment that demand high reliability and small form factors.
Q & A
- What is the collector-emitter voltage (VCEO) of the MMBT3904LP-7 transistor?
The collector-emitter voltage (VCEO) of the MMBT3904LP-7 transistor is 40V.
- What is the maximum collector current (IC) of the MMBT3904LP-7 transistor?
The maximum collector current (IC) of the MMBT3904LP-7 transistor is 200mA.
- What is the power dissipation (PD) of the MMBT3904LP-7 transistor?
The power dissipation (PD) of the MMBT3904LP-7 transistor is up to 1000mW.
- What is the package type of the MMBT3904LP-7 transistor?
The MMBT3904LP-7 transistor is packaged in the X1-DFN1006-3 case.
- Is the MMBT3904LP-7 transistor RoHS compliant?
Yes, the MMBT3904LP-7 transistor is totally lead-free and fully RoHS compliant.
- What are the thermal characteristics of the MMBT3904LP-7 transistor?
The thermal resistance, junction to ambient (RθJA), is 310°C/W.
- What is the frequency rating of the MMBT3904LP-7 transistor?
The frequency rating of the MMBT3904LP-7 transistor is up to 300MHz.
- Is the MMBT3904LP-7 transistor suitable for automotive applications?
Yes, the MMBT3904LP-7 transistor is qualified to AEC-Q101 standards for high reliability in automotive applications.
- What is the complementary PNP type of the MMBT3904LP-7 transistor?
The complementary PNP type of the MMBT3904LP-7 transistor is the MMBT3906LP.
- How does the MMBT3904LP-7 transistor minimize off-board profile?
The MMBT3904LP-7 transistor has a 0.5mm height package, minimizing off-board profile.