MJD350-13
  • Share:

Diodes Incorporated MJD350-13

Manufacturer No:
MJD350-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS PNP 300V 0.5A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD350-13 is a high-performance bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This PNP transistor is designed for a variety of applications requiring high reliability and robust performance. It features a proprietary structure that enhances its electrical characteristics, making it suitable for use in demanding environments.

Key Specifications

ParameterValue
Transistor PolarityPNP
Collector-Emitter Voltage (VCEO)300 V
DC Collector Current500 mA
Power Dissipation15 W
Package TypeTO-252 (DPAK), Surface Mount
Junction Temperature150°C
AEC-Q101 QualificationYes

Key Features

  • Ultra-low VCE(sat) performance due to proprietary structure
  • High peak current capability
  • High gain
  • Low saturation voltage
  • AEC-Q101 qualified for automotive applications
  • Designed for operating in avalanche mode

Applications

The MJD350-13 transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Power management: Its high current and power dissipation capabilities make it ideal for power management circuits.
  • Switching and amplification: The transistor's high gain and low saturation voltage make it suitable for switching and amplification applications.
  • Industrial control systems: It can be used in industrial control systems where high reliability and robust performance are required.

Q & A

  1. What is the collector-emitter voltage rating of the MJD350-13 transistor?
    The collector-emitter voltage rating is 300 V.
  2. What is the maximum DC collector current of the MJD350-13?
    The maximum DC collector current is 500 mA.
  3. What is the power dissipation of the MJD350-13 transistor?
    The power dissipation is 15 W.
  4. What package type does the MJD350-13 come in?
    The MJD350-13 comes in a TO-252 (DPAK) surface mount package.
  5. Is the MJD350-13 AEC-Q101 qualified?
    Yes, the MJD350-13 is AEC-Q101 qualified.
  6. What is the junction temperature of the MJD350-13?
    The junction temperature is 150°C.
  7. What are some key features of the MJD350-13 transistor?
    Key features include ultra-low VCE(sat), high peak current, high gain, low saturation voltage, and AEC-Q101 qualification.
  8. Where can the MJD350-13 be used?
    The MJD350-13 can be used in automotive systems, power management, switching and amplification, and industrial control systems.
  9. Why is the MJD350-13 suitable for automotive applications?
    The MJD350-13 is suitable for automotive applications due to its AEC-Q101 qualification.
  10. What makes the MJD350-13 suitable for high-current applications?
    The MJD350-13 is suitable for high-current applications due to its high peak current capability and high power dissipation.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:15 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252-3
0 Remaining View Similar

In Stock

$0.22
2,002

Please send RFQ , we will respond immediately.

Similar Products

Part Number MJD350-13 MJD340-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 15 W 15 W
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252-3 TO-252-3

Related Product By Categories

PMBTA06,235
PMBTA06,235
Nexperia USA Inc.
TRANS NPN 80V 0.5A TO236AB
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BFS20,235
BFS20,235
Nexperia USA Inc.
TRANS NPN 20V 0.025A TO236AB
MJE5852G
MJE5852G
onsemi
TRANS PNP 400V 8A TO220
TIP121TU
TIP121TU
onsemi
TRANS NPN DARL 80V 5A TO220-3
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92

Related Product By Brand

1N5711WS-7
1N5711WS-7
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
BAW567DW-7-F
BAW567DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAT54TC
BAT54TC
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BAS21TA
BAS21TA
Diodes Incorporated
DIODE HI SPEED SWITCHING SOT23-3
BZX84C5V1W-7-F
BZX84C5V1W-7-F
Diodes Incorporated
DIODE ZENER 5.1V 200MW SOT323
BZX84B9V1Q-7-F
BZX84B9V1Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C47-7-F-79
BZX84C47-7-F-79
Diodes Incorporated
DIODE ZENER
BC847BVNQ-7
BC847BVNQ-7
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT56
BC856A-7-F
BC856A-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT23-3
BCX5310TA
BCX5310TA
Diodes Incorporated
TRANS PNP 80V 1A SOT89-3