BCX5316QTA
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Diodes Incorporated BCX5316QTA

Manufacturer No:
BCX5316QTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT89 T&
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5316QTA is a PNP silicon planar medium power transistor manufactured by Diodes Incorporated, formerly known as Zetex Semiconductors. This transistor is designed for medium power applications and is known for its reliability and performance in various electronic circuits.

Key Specifications

ParameterValue
Collector Emitter Voltage (Vceo)-80V
Transition Frequency (ft)125MHz
Power Dissipation (Pd)500mW
DC Collector Current-1A
DC Current Gain (hFE)250hFE
Transistor Case StyleSOT-89
No. of Pins3 Pins
Operating Temperature Max150°C
Operating Temperature Min-65°C

Key Features

  • PNP Silicon Planar Medium Power Transistor: Suitable for medium power applications.
  • High Collector Emitter Voltage: Rated at -80V, making it suitable for high voltage circuits.
  • High Transition Frequency: 125MHz, which is beneficial for high-frequency applications.
  • Compact Package: SOT-89 package, ideal for space-constrained designs.
  • Wide Operating Temperature Range: From -65°C to 150°C, ensuring reliability in various environmental conditions.

Applications

  • Automotive Systems: Due to its compliance with automotive qualification standards, it is often used in automotive electronics.
  • Power Amplifiers: Suitable for use in power amplifier circuits due to its medium power handling capability.
  • Switching Circuits: Can be used in switching applications where high transition frequency is required.
  • General Purpose Amplification: Used in various general-purpose amplification circuits where reliability and performance are crucial.

Q & A

  1. What is the collector emitter voltage of the BCX5316QTA transistor?
    The collector emitter voltage (Vceo) of the BCX5316QTA transistor is -80V.
  2. What is the maximum DC collector current of the BCX5316QTA transistor?
    The maximum DC collector current is -1A.
  3. What is the transition frequency of the BCX5316QTA transistor?
    The transition frequency (ft) is 125MHz.
  4. What is the power dissipation of the BCX5316QTA transistor?
    The power dissipation (Pd) is 500mW.
  5. What is the case style of the BCX5316QTA transistor?
    The transistor is packaged in a SOT-89 case style.
  6. What is the operating temperature range of the BCX5316QTA transistor?
    The operating temperature range is from -65°C to 150°C.
  7. Is the BCX5316QTA transistor RoHS compliant?
    Yes, the BCX5316QTA transistor is RoHS compliant.
  8. What are some common applications of the BCX5316QTA transistor?
    Common applications include automotive systems, power amplifiers, switching circuits, and general-purpose amplification.
  9. Who is the manufacturer of the BCX5316QTA transistor?
    The BCX5316QTA transistor is manufactured by Diodes Incorporated.
  10. What is the DC current gain (hFE) of the BCX5316QTA transistor?
    The DC current gain (hFE) is 250hFE.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89-3
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Similar Products

Part Number BCX5316QTA BCX5616QTA BCX5316TA BCX5216QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Transistor Type PNP NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 1 W 2 W 1 W 1 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3

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IC COMPARATOR DUAL DIFF TSSOP-8