BCX5616QTA
  • Share:

Diodes Incorporated BCX5616QTA

Manufacturer No:
BCX5616QTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5616QTA is an 80V NPN medium power Bipolar Junction Transistor (BJT) manufactured by Diodes Incorporated. This transistor is specifically designed to meet the stringent requirements of automotive applications and is AEC-Q101 qualified, ensuring its reliability and performance in demanding environments. The BCX5616QTA features a high continuous collector current of 1A and a peak pulse current of 2A, making it suitable for medium power switching and amplification applications.

Key Specifications

Parameter Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (BVCBO) 100 - - V IC = 100µA
Collector-Emitter Breakdown Voltage (BVCEO) 80 - - V IC = 10mA
Emitter-Base Breakdown Voltage (BVEBO) 6 - - V -
Continuous Collector Current (IC) - - 1 A -
Peak Pulse Current (ICM) - - 2 A -
Saturation Voltage (VCE(sat)) - - 0.5 V IC = 0.5A
Package - - SOT89 - -
Weight - - 0.055 grams - Approximate

Key Features

  • High continuous collector current of 1A and peak pulse current of 2A.
  • Low saturation voltage VCE(sat) < 500mV @ 0.5A.
  • Epitaxial planar die construction.
  • Complementary PNP types: BCX5316Q.
  • Totally lead-free and fully RoHS compliant.
  • Halogen- and antimony-free, making it a “green” device.
  • AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

Applications

  • Automotive applications requiring specific change control.
  • Medium power switching or amplification applications.
  • AF driver and output stages.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BCX5616QTA?

    The maximum collector-emitter breakdown voltage (BVCEO) is 80V.

  2. What is the continuous collector current rating of the BCX5616QTA?

    The continuous collector current (IC) is 1A.

  3. What is the peak pulse current rating of the BCX5616QTA?

    The peak pulse current (ICM) is 2A.

  4. What is the saturation voltage of the BCX5616QTA at 0.5A collector current?

    The saturation voltage (VCE(sat)) is less than 500mV at 0.5A collector current.

  5. Is the BCX5616QTA RoHS compliant?
  6. What is the package type of the BCX5616QTA?

    The package type is SOT89.

  7. Is the BCX5616QTA suitable for automotive applications?
  8. What are the complementary PNP types for the BCX5616QTA?

    The complementary PNP types are BCX5316Q.

  9. What are the typical applications of the BCX5616QTA?
  10. Is the BCX5616QTA halogen- and antimony-free?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89-3
0 Remaining View Similar

In Stock

$0.36
877

Please send RFQ , we will respond immediately.

Similar Products

Part Number BCX5616QTA BCX5616TA BCX5616QTC BCX5316QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Transistor Type NPN NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 1 W 1 W 1 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3

Related Product By Categories

BCP5616TA
BCP5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
PBSS5350Z,135
PBSS5350Z,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
BST52,135
BST52,135
Nexperia USA Inc.
TRANS NPN DARL 80V 1A SOT89
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA
BCP69TA
BCP69TA
Diodes Incorporated
TRANS PNP BIPOL 20V 1A SOT-223

Related Product By Brand

BAV70LP-7
BAV70LP-7
Diodes Incorporated
DIODE ARRAY GP 75V 150MA 3XDFN
MBR20200CT-G1
MBR20200CT-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 200V TO220
BAW56W-7-G
BAW56W-7-G
Diodes Incorporated
DIODE GEN PURPOSE
BAS40-7-F-31
BAS40-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT23-3
BZX84C33-7-F
BZX84C33-7-F
Diodes Incorporated
DIODE ZENER 33V 300MW SOT23-3
BZX84C2V4W-7-F
BZX84C2V4W-7-F
Diodes Incorporated
DIODE ZENER 2.4V 200MW SOT323
BZX84B4V3Q-7-F
BZX84B4V3Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C16W-7-F
BZX84C16W-7-F
Diodes Incorporated
DIODE ZENER 16V 200MW SOT323
BC857AW-7-F
BC857AW-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT323
BCP5616QTA
BCP5616QTA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BSS123ATC
BSS123ATC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
74LVC1G08QSE-7
74LVC1G08QSE-7
Diodes Incorporated
IC GATE AND 1CH 2-INP SOT353