Overview
The BCP6825TC is an NPN medium power transistor manufactured by Diodes Incorporated. This transistor is housed in a SOT223 package and is designed for a variety of applications requiring medium power handling. It is characterized by its robust performance, reliability, and compact design, making it suitable for use in various electronic systems.
Key Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | - | 32 | V |
| VCEO (Collector-Emitter Voltage) | Open Base | - | - | 20 | V |
| VEBO (Emitter-Base Voltage) | Open Collector | - | - | 5 | V |
| IC (Collector Current, DC) | - | - | - | 1 | A |
| ICM (Peak Collector Current) | - | - | - | 2 | A |
| IBM (Peak Base Current) | - | - | - | 200 | mA |
| Ptot (Total Power Dissipation) | Tamb ≤25 °C; notes 1 and 2 | - | - | 0.625 | W |
| Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
| Tj (Junction Temperature) | - | - | - | 150 | °C |
| Tamb (Operating Ambient Temperature) | - | -65 | - | 150 | °C |
| hFE (DC Current Gain) | VCE = 1 V; IC = 1 A | 60 | - | - | - |
| VCEsat (Collector-Emitter Saturation Voltage) | IC = 1 A; IB = 100 mA | - | - | 500 | mV |
Key Features
- NPN medium power transistor in SOT223 package.
- Collector-emitter voltage (VCEO) up to 20V.
- Collector current (IC) up to 1A and peak collector current (ICM) up to 2A.
- Low collector-emitter saturation voltage (VCEsat) of 500mV.
- High DC current gain (hFE) with a minimum value of 60 at VCE = 1V and IC = 1A.
- Wide operating temperature range from -65°C to 150°C.
- Compact design suitable for space-constrained applications.
Applications
The BCP6825TC transistor is versatile and can be used in a variety of applications, including:
- General-purpose switching and amplification.
- Automotive systems due to its robust performance and reliability.
- Industrial control systems.
- Consumer electronics requiring medium power handling.
- Power management circuits.
Q & A
- What is the maximum collector-emitter voltage of the BCP6825TC transistor?
The maximum collector-emitter voltage (VCEO) is 20V. - What is the maximum collector current of the BCP6825TC transistor?
The maximum collector current (IC) is 1A, and the peak collector current (ICM) is 2A. - What is the package type of the BCP6825TC transistor?
The transistor is housed in a SOT223 package. - What is the operating temperature range of the BCP6825TC transistor?
The operating temperature range is from -65°C to 150°C. - What is the typical DC current gain (hFE) of the BCP6825TC transistor?
The typical DC current gain (hFE) is 60 at VCE = 1V and IC = 1A. - What is the collector-emitter saturation voltage (VCEsat) of the BCP6825TC transistor?
The collector-emitter saturation voltage (VCEsat) is 500mV. - Is the BCP6825TC transistor suitable for automotive applications?
Yes, it is suitable for automotive systems due to its robust performance and reliability. - What is the total power dissipation of the BCP6825TC transistor under standard conditions?
The total power dissipation (Ptot) is up to 0.625W under standard conditions. - What is the thermal resistance from junction to ambient for the BCP6825TC transistor?
The thermal resistance from junction to ambient (Rth(j-a)) varies depending on the mounting conditions, with a typical value of 200 K/W. - Is the BCP6825TC transistor RoHS compliant?
Yes, the BCP6825TC transistor is RoHS compliant and lead-free.
