Overview
The BCM857BS-7-F is a dual PNP bipolar junction transistor (BJT) array manufactured by Diodes Incorporated. This surface-mount device is packaged in the SOT-363 (SC-70-6, SC-88) format, making it suitable for a variety of applications where space is limited. The transistor array features intrinsically matched PNP transistors, which are beneficial for applications requiring consistent performance and minimal thermal variations. It is fully RoHS compliant, lead-free, and halogen-free, aligning with modern environmental standards.
Key Specifications
| Attribute | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Part Number | BCM857BS-7-F |
| Transistor Type | 2 PNP (Dual) |
| Collector-Emitter Voltage (Max) | 45V |
| Collector Current (Max) | 100mA |
| Power Dissipation (Total) | 200mW |
| Collector-Base Voltage | 50V |
| Collector-Emitter Saturation Voltage | 100mV |
| Emitter-Base Voltage | 5V |
| DC Current Gain (hFE) (Min) | 220 @ 2mA, 5V |
| Collector Current Cutoff (Max) | 15nA |
| Frequency - Transition | 100MHz |
| Operating Temperature Range | -65°C to +150°C |
| Moisture Sensitivity Level | 1 |
| Package Style | SOT-363 (SC-70-6, SC-88) |
| Mounting Method | Surface Mount |
Key Features
- Intrinsically matched pair of PNP transistors, ensuring consistent performance and minimal thermal variations.
- High collector current of up to 100mA and collector-emitter voltage of up to 45V.
- Low collector-emitter saturation voltage of 100mV and DC current gain (hFE) of at least 220.
- High frequency transition of 100MHz, suitable for high-frequency applications).
- Operating temperature range from -65°C to +150°C, making it versatile for various environmental conditions).
- Fully RoHS compliant, lead-free, and halogen-free, aligning with modern environmental standards).
- Surface mount package in SOT-363 format, ideal for space-constrained designs).
Applications
- Push-pull amplifier stages: The dual PNP configuration makes it suitable for push-pull amplifier applications where matched transistors are crucial).
- LED drivers: The high current handling and low saturation voltage make it ideal for LED driver circuits).
- Signal switching circuits: The high frequency transition and matched transistors are beneficial for signal switching applications).
- Automotive applications: The device is qualified to AEC-Q100/101/104/200 standards and manufactured in IATF 16949 certified facilities, making it suitable for automotive use).
Q & A
- What is the BCM857BS-7-F transistor?
The BCM857BS-7-F is a dual PNP bipolar junction transistor array manufactured by Diodes Incorporated, packaged in the SOT-363 format.
- What are the key specifications of the BCM857BS-7-F?
Key specifications include a collector-emitter voltage of 45V, collector current of 100mA, power dissipation of 200mW, and an operating temperature range of -65°C to +150°C.
- What are the advantages of using a dual PNP transistor array like the BCM857BS-7-F?
The dual PNP array offers better matching between transistors, reduces PCB space, and improves thermal performance since all transistors share the same substrate.
- Is the BCM857BS-7-F RoHS compliant?
- What are common applications for the BCM857BS-7-F?
- What is the package style of the BCM857BS-7-F?
The BCM857BS-7-F is packaged in the SOT-363 (SC-70-6, SC-88) format.
- What is the maximum collector current of the BCM857BS-7-F?
The maximum collector current is 100mA.
- What is the frequency transition of the BCM857BS-7-F?
The frequency transition is 100MHz.
- Is the BCM857BS-7-F suitable for high-temperature environments?
- How can I obtain the datasheet for the BCM857BS-7-F?
The datasheet can be obtained from the Diodes Incorporated website or through authorized distributors like Future Electronics, Jinftry, or TME.
