Overview
The BC847BSQ-7-F is a dual NPN small signal surface mount transistor produced by Diodes Incorporated. This component is designed for high reliability and efficiency in various electronic circuits. It is particularly suited for automotive applications due to its AEC-Q101 qualification and compliance with specific change control requirements. The transistor is manufactured in IATF16949 certified facilities, ensuring high-quality standards.
Key Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 50 | V | IC = 100µA, IB = 0 |
| Collector-Emitter Breakdown Voltage | BVCEO | 45 | V | IC = 10mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 100µA, IC = 0 |
| DC Current Gain | hFE | 200 - 450 | VCE = 5.0V, IC = 2.0mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 100 - 400 mV | IC = 10mA, IB = 0.5mA | |
| Maximum DC Collector Current | IC | 100 mA | ||
| Power Dissipation | PD | 200 mW | ||
| Thermal Resistance, Junction to Ambient | RθJA | 625 °C/W | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 °C | ||
| Package | SOT-363 | |||
| Weight | 0.006 grams (Approximate) |
Key Features
- Ultra-small surface mount package (SOT-363), ideal for automated insertion.
- Totally lead-free and fully RoHS compliant, halogen and antimony free, making it a 'Green' device.
- Suitable for automotive applications with AEC-Q101 qualification and PPAP capability.
- Manufactured in IATF16949 certified facilities.
- Matte tin finish, solderable per MIL-STD-202, Method 208.
- Moisture sensitivity level 1 per J-STD-020.
Applications
- Switching applications.
- Audio frequency (AF) amplifier applications.
- General-purpose amplifier circuits.
- Automotive electronics requiring high reliability and specific change control.
Q & A
- What is the collector-emitter breakdown voltage of the BC847BSQ-7-F?
The collector-emitter breakdown voltage (BVCEO) is 45V.
- What is the maximum DC collector current for this transistor?
The maximum DC collector current is 100 mA.
- What is the power dissipation of the BC847BSQ-7-F?
The power dissipation (PD) is 200 mW.
- What is the thermal resistance, junction to ambient, for this component?
The thermal resistance, junction to ambient (RθJA), is 625 °C/W.
- What is the operating and storage temperature range for the BC847BSQ-7-F?
The operating and storage temperature range is -55 to +150 °C.
- Is the BC847BSQ-7-F RoHS compliant?
Yes, the BC847BSQ-7-F is fully RoHS compliant and lead-free.
- What package type does the BC847BSQ-7-F use?
The package type is SOT-363.
- Is the BC847BSQ-7-F suitable for automotive applications?
Yes, it is AEC-Q101 qualified and suitable for automotive applications.
- What is the DC current gain range for the BC847BSQ-7-F?
The DC current gain (hFE) ranges from 200 to 450.
- What is the collector-emitter saturation voltage for this transistor?
The collector-emitter saturation voltage (VCE(sat)) ranges from 100 to 400 mV.
