BC847AQ-7-F
  • Share:

Diodes Incorporated BC847AQ-7-F

Manufacturer No:
BC847AQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
GENERAL PURPOSE TRANSISTOR SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847AQ-7-F is a small signal NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is part of the BC846AQ-BC848CQ series, which is known for its high reliability and suitability for various electronic applications. This transistor is packaged in a SOT23 case, making it ideal for space-constrained designs. It is fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards, ensuring its reliability in automotive and other demanding environments.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Base VoltageVCBO50V
Collector-Emitter VoltageVCEO45V
Emitter-Base VoltageVEBO6.0V
Continuous Collector CurrentIC100mA
Peak Collector CurrentICM200mA
Peak Emitter CurrentIEM200mA
Power DissipationPD310mW
Thermal Resistance, Junction to AmbientRθJA403°C/W
DC Current Gain (hFE)hFE110-180-220-
Collector-Emitter Saturation Voltage (VCE(sat))VCE(sat)90-250 mVmV
Base-Emitter Turn-On Voltage (VBE(on))VBE(on)580-660-700 mVmV
Package-SOT23-
Weight-0.008 grams (Approximate)-

Key Features

  • Ideally suited for automatic insertion due to its SOT23 package.
  • Complementary PNP types available (BC856AQ–BC858CQ).
  • Totally lead-free and fully RoHS compliant.
  • Halogen and antimony free, making it a 'green' device.
  • AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, ensuring high reliability for automotive applications.
  • UL Flammability Classification Rating 94V-0.
  • Moisture sensitivity level 1 per J-STD-020.
  • Terminals are matte tin plated leads, solderable per MIL-STD-202, Method 208.

Applications

The BC847AQ-7-F is versatile and can be used in a variety of applications, including:

  • Switching applications due to its fast switching times and low saturation voltage.
  • Audio frequency (AF) amplifier applications, leveraging its high current gain and low noise characteristics.
  • Automotive systems, where its AEC-Q101 qualification ensures reliability in harsh environments.
  • General-purpose amplification and switching in electronic circuits.

Q & A

  1. What is the package type of the BC847AQ-7-F transistor?
    The BC847AQ-7-F transistor is packaged in a SOT23 case.
  2. Is the BC847AQ-7-F RoHS compliant?
    Yes, the BC847AQ-7-F is totally lead-free and fully RoHS compliant.
  3. What are the complementary PNP types for the BC847AQ-7-F?
    The complementary PNP types are BC856AQ–BC858CQ.
  4. What is the maximum collector-emitter voltage (VCEO) for the BC847AQ-7-F?
    The maximum collector-emitter voltage (VCEO) is 45V.
  5. What is the continuous collector current (IC) rating for the BC847AQ-7-F?
    The continuous collector current (IC) rating is 100 mA.
  6. Is the BC847AQ-7-F suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  7. What is the thermal resistance, junction to ambient (RθJA), for the BC847AQ-7-F?
    The thermal resistance, junction to ambient (RθJA), is 403 °C/W.
  8. What is the typical DC current gain (hFE) for the BC847AQ-7-F?
    The typical DC current gain (hFE) ranges from 110 to 180 to 220.
  9. What is the collector-emitter saturation voltage (VCE(sat)) for the BC847AQ-7-F?
    The collector-emitter saturation voltage (VCE(sat)) is typically between 90 mV and 250 mV.
  10. What is the base-emitter turn-on voltage (VBE(on)) for the BC847AQ-7-F?
    The base-emitter turn-on voltage (VBE(on)) is typically between 580 mV and 700 mV.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.03
23,541

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC847AQ-7-F BC847AT-7-F BC847BQ-7-F BC847AW-7-F BC847A-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA 15nA (ICBO) 15nA 20nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 310 mW 150 mW 310 mW 200 mW 300 mW
Frequency - Transition 300MHz 100MHz 300MHz 300MHz 300MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-523 SOT-23-3 SOT-323 SOT-23-3

Related Product By Categories

BCX17,235
BCX17,235
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
MMBT3904-7-F
MMBT3904-7-F
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
BST52,135
BST52,135
Nexperia USA Inc.
TRANS NPN DARL 80V 1A SOT89
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BCX52E6327
BCX52E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP

Related Product By Brand

BAT54C-7
BAT54C-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
1N4007L-T
1N4007L-T
Diodes Incorporated
DIODE GEN PURP 1KV 1A DO41
BAS40-7-F-31
BAS40-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT23-3
1N4148WT-7-G
1N4148WT-7-G
Diodes Incorporated
DIODE GEN PURP 80V 125MA SOD523
BZT52HC5V1WF-7
BZT52HC5V1WF-7
Diodes Incorporated
DIODE ZENER 5.1V 375MW SOD123F
BZX84C3V9T-7-F
BZX84C3V9T-7-F
Diodes Incorporated
DIODE ZENER 3.9V 150MW SOT523
BCX5416TA
BCX5416TA
Diodes Incorporated
TRANS NPN 45V 1A SOT89-3
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BSS84V-7
BSS84V-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SOT-563
BSS123-7-F
BSS123-7-F
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
DMG2305UX-13
DMG2305UX-13
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23
74LVC2G34FW4-7
74LVC2G34FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN