BAS40-7-G
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Diodes Incorporated BAS40-7-G

Manufacturer No:
BAS40-7-G
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-7-G is a surface-mount Schottky Barrier Diode produced by Diodes Incorporated. This diode is housed in a SOT23 (Standard) package and is designed to offer low forward voltage drop and fast switching capabilities. It features a PN Junction Guard Ring for transient and ESD protection, ensuring robust performance in various applications. The device is fully lead-free and RoHS compliant, making it an environmentally friendly choice.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 40 V
Forward Continuous Current IF 200 mA
Forward Surge Current (tp < 1 s) IFSM 600 mA
Power Dissipation (on FR-4 board) Ptot 350 mW
Thermal Resistance, Junction to Ambient Air RθJA 357 °C/W
Operating Temperature Range TJ -55 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
Forward Voltage (IF = 1 mA) VF 380 mV mV
Reverse Leakage Current (VR = 30 V) IR 20 - 200 nA nA
Total Capacitance (VR = 0 V, f = 1 MHz) CT 4.0 - 5.0 pF pF
Reverse Recovery Time trr 5 ns ns

Key Features

  • Low Forward Voltage Drop: The BAS40-7-G offers a low forward voltage drop, which is beneficial for reducing power losses in applications.
  • Fast Switching: This diode is designed for fast switching, making it suitable for high-frequency applications.
  • PN Junction Guard Ring: The device includes a PN Junction Guard Ring for transient and ESD protection, enhancing its reliability.
  • Lead-Free and RoHS Compliant: The diode is fully lead-free and compliant with RoHS directives, making it environmentally friendly.
  • Compact SOT23 Package: The SOT23 package is compact and suitable for space-constrained designs.

Applications

  • Power Supplies: The BAS40-7-G can be used in power supply circuits to protect against backflow and reduce power losses.
  • Switching Circuits: Its fast switching capability makes it ideal for use in switching circuits and high-frequency applications.
  • ESD Protection: The diode's ESD protection features make it suitable for protecting sensitive electronic components from electrostatic discharge.
  • Automotive Systems: Given its robust specifications, it can be used in automotive systems where reliability and performance are critical.

Q & A

  1. What is the peak repetitive reverse voltage of the BAS40-7-G?

    The peak repetitive reverse voltage (VRRM) is 40 V.

  2. What is the forward continuous current rating of the BAS40-7-G?

    The forward continuous current (IF) is 200 mA.

  3. What is the forward surge current rating of the BAS40-7-G?

    The forward surge current (IFSM) is 600 mA for a duration of less than 1 second.

  4. What is the thermal resistance of the BAS40-7-G from junction to ambient air?

    The thermal resistance (RθJA) is 357 °C/W.

  5. What is the operating temperature range of the BAS40-7-G?

    The operating temperature range is -55 to +125 °C.

  6. What is the storage temperature range of the BAS40-7-G?

    The storage temperature range is -65 to +150 °C.

  7. What is the typical forward voltage drop of the BAS40-7-G at 1 mA?

    The typical forward voltage drop (VF) at 1 mA is 380 mV.

  8. What is the reverse leakage current of the BAS40-7-G at 30 V?

    The reverse leakage current (IR) at 30 V is between 20 and 200 nA.

  9. What is the total capacitance of the BAS40-7-G at 1 MHz?

    The total capacitance (CT) at 1 MHz is between 4.0 and 5.0 pF.

  10. What is the reverse recovery time of the BAS40-7-G?

    The reverse recovery time (trr) is 5 ns.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:200 nA @ 30 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 125°C
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Similar Products

Part Number BAS40-7-G BAS40-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns
Current - Reverse Leakage @ Vr 200 nA @ 30 V 200 nA @ 30 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C

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