BAS40-7-G
  • Share:

Diodes Incorporated BAS40-7-G

Manufacturer No:
BAS40-7-G
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-7-G is a surface-mount Schottky Barrier Diode produced by Diodes Incorporated. This diode is housed in a SOT23 (Standard) package and is designed to offer low forward voltage drop and fast switching capabilities. It features a PN Junction Guard Ring for transient and ESD protection, ensuring robust performance in various applications. The device is fully lead-free and RoHS compliant, making it an environmentally friendly choice.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 40 V
Forward Continuous Current IF 200 mA
Forward Surge Current (tp < 1 s) IFSM 600 mA
Power Dissipation (on FR-4 board) Ptot 350 mW
Thermal Resistance, Junction to Ambient Air RθJA 357 °C/W
Operating Temperature Range TJ -55 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
Forward Voltage (IF = 1 mA) VF 380 mV mV
Reverse Leakage Current (VR = 30 V) IR 20 - 200 nA nA
Total Capacitance (VR = 0 V, f = 1 MHz) CT 4.0 - 5.0 pF pF
Reverse Recovery Time trr 5 ns ns

Key Features

  • Low Forward Voltage Drop: The BAS40-7-G offers a low forward voltage drop, which is beneficial for reducing power losses in applications.
  • Fast Switching: This diode is designed for fast switching, making it suitable for high-frequency applications.
  • PN Junction Guard Ring: The device includes a PN Junction Guard Ring for transient and ESD protection, enhancing its reliability.
  • Lead-Free and RoHS Compliant: The diode is fully lead-free and compliant with RoHS directives, making it environmentally friendly.
  • Compact SOT23 Package: The SOT23 package is compact and suitable for space-constrained designs.

Applications

  • Power Supplies: The BAS40-7-G can be used in power supply circuits to protect against backflow and reduce power losses.
  • Switching Circuits: Its fast switching capability makes it ideal for use in switching circuits and high-frequency applications.
  • ESD Protection: The diode's ESD protection features make it suitable for protecting sensitive electronic components from electrostatic discharge.
  • Automotive Systems: Given its robust specifications, it can be used in automotive systems where reliability and performance are critical.

Q & A

  1. What is the peak repetitive reverse voltage of the BAS40-7-G?

    The peak repetitive reverse voltage (VRRM) is 40 V.

  2. What is the forward continuous current rating of the BAS40-7-G?

    The forward continuous current (IF) is 200 mA.

  3. What is the forward surge current rating of the BAS40-7-G?

    The forward surge current (IFSM) is 600 mA for a duration of less than 1 second.

  4. What is the thermal resistance of the BAS40-7-G from junction to ambient air?

    The thermal resistance (RθJA) is 357 °C/W.

  5. What is the operating temperature range of the BAS40-7-G?

    The operating temperature range is -55 to +125 °C.

  6. What is the storage temperature range of the BAS40-7-G?

    The storage temperature range is -65 to +150 °C.

  7. What is the typical forward voltage drop of the BAS40-7-G at 1 mA?

    The typical forward voltage drop (VF) at 1 mA is 380 mV.

  8. What is the reverse leakage current of the BAS40-7-G at 30 V?

    The reverse leakage current (IR) at 30 V is between 20 and 200 nA.

  9. What is the total capacitance of the BAS40-7-G at 1 MHz?

    The total capacitance (CT) at 1 MHz is between 4.0 and 5.0 pF.

  10. What is the reverse recovery time of the BAS40-7-G?

    The reverse recovery time (trr) is 5 ns.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:200 nA @ 30 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

-
289

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAS40-7-G BAS40-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns
Current - Reverse Leakage @ Vr 200 nA @ 30 V 200 nA @ 30 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523

Related Product By Brand

1N5711WS-13
1N5711WS-13
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
BAT54CTA
BAT54CTA
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAT42W-7
BAT42W-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD123
1N4007L-T
1N4007L-T
Diodes Incorporated
DIODE GEN PURP 1KV 1A DO41
BAS21W-7
BAS21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BZX84C22TS-7-F
BZX84C22TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 22V SOT363
BZX84C2V7-7-F
BZX84C2V7-7-F
Diodes Incorporated
DIODE ZENER 2.7V 300MW SOT23-3
BZX84B16Q-7-F
BZX84B16Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84B3V0Q-7-F
BZX84B3V0Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C10-7-F-31
BZX84C10-7-F-31
Diodes Incorporated
DIODE ZENER 10V 300MW SOT23
BFS17HTA
BFS17HTA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
BC847AW-7-F
BC847AW-7-F
Diodes Incorporated
TRANS NPN 45V 0.1A SOT323