Overview
The TIP112 is a medium-power NPN Darlington transistor produced by Central Semiconductor Corp. It is part of the TIP110 series, which includes both NPN and PNP types. This transistor is designed for general-purpose amplifier and low-speed switching applications. The TIP112 is known for its high DC current gain and robust collector-emitter sustaining voltage, making it suitable for a variety of power management and control circuits.
However, it is important to note that the TIP112, with the exception of some specific models, has been discontinued and is now classified as End of Life (EOL) by some manufacturers.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-Emitter Voltage) | - | 100 | - | - | Vdc |
| VCEO(sus) (Collector-Emitter Sustaining Voltage) | IC = 30 mA, IB = 0 | 100 | - | - | Vdc |
| ICEO (Collector Cut-off Current) | VCE = Half Rated VCEO, IB = 0 | - | - | 2 | mA |
| ICBO (Collector Cut-off Current) | VCB = Rated VCBO, IE = 0 | - | - | 1 | mA |
| IEBO (Emitter Cut-off Current) | VEB = 5 V, IC = 0 | - | - | 2 | mA |
| VCE(sat) (Collector-Emitter Saturation Voltage) | IC = 2 A, IB = 8 mA | - | - | 2.5 | Vdc |
| VBE(on) (Base-Emitter On Voltage) | IC = 2 A, VCE = 4 V | - | - | 2.8 | Vdc |
| hFE (DC Current Gain) | IC = 1 A, VCE = 4 V | 1000 | - | - | - |
Key Features
- High DC Current Gain: The TIP112 has a high DC current gain (hFE) of 1000 at IC = 1 A and VCE = 4 V, making it suitable for amplification and switching applications.
- Collector-Emitter Sustaining Voltage: It has a collector-emitter sustaining voltage (VCEO(sus)) of 100 Vdc, ensuring robust performance under various operating conditions.
- Low Collector-Emitter Saturation Voltage: The transistor features a low collector-emitter saturation voltage (VCE(sat)) of 2.5 Vdc at IC = 2 A and IB = 8 mA, which is beneficial for reducing power losses.
- Monolithic Construction with Built-in Base-Emitter Shunt Resistors: This design enhances the transistor's stability and simplifies circuit design.
- Pb-Free Packages Available: The TIP112 is available in Pb-free packages, aligning with environmental and regulatory requirements.
Applications
- General-Purpose Amplifiers: The TIP112 is suitable for use in general-purpose amplifier circuits due to its high current gain and robust voltage handling capabilities.
- Low-Speed Switching: It is used in low-speed switching applications where high current drive and reliability are required).
- Power Management Circuits: The transistor can be used in various power management circuits, including those requiring high current and voltage handling).
- Automotive and Industrial Control Systems: Its robust specifications make it a candidate for use in automotive and industrial control systems where reliability and performance are critical).
Q & A
- What is the collector-emitter voltage rating of the TIP112 transistor?
The collector-emitter voltage rating of the TIP112 transistor is 100 Vdc).
- What is the typical DC current gain (hFE) of the TIP112 transistor?
The typical DC current gain (hFE) of the TIP112 transistor is 1000 at IC = 1 A and VCE = 4 V).
- What is the collector-emitter saturation voltage (VCE(sat)) of the TIP112 transistor?
The collector-emitter saturation voltage (VCE(sat)) of the TIP112 transistor is 2.5 Vdc at IC = 2 A and IB = 8 mA).
- Is the TIP112 transistor available in Pb-free packages?
Yes, the TIP112 transistor is available in Pb-free packages).
- What are the typical applications of the TIP112 transistor?
The TIP112 transistor is typically used in general-purpose amplifier circuits, low-speed switching applications, and power management circuits).
- What is the thermal resistance junction-case (Rthj-case) of the TIP112 transistor?
The thermal resistance junction-case (Rthj-case) of the TIP112 transistor is 2.5 °C/W).
- What is the status of the TIP112 transistor regarding its production and availability?
The TIP112 transistor, with some exceptions, has been discontinued and is now classified as End of Life (EOL)).
- What are the emitter cut-off current (IEBO) and collector cut-off current (ICBO) specifications for the TIP112 transistor?
The emitter cut-off current (IEBO) is 2 mA at VEB = 5 V and IC = 0, and the collector cut-off current (ICBO) is 1 mA at VCB = Rated VCBO and IE = 0).
- What is the base-emitter on voltage (VBE(on)) of the TIP112 transistor?
The base-emitter on voltage (VBE(on)) of the TIP112 transistor is 2.8 Vdc at IC = 2 A and VCE = 4 V).
- How does the monolithic construction with built-in base-emitter shunt resistors benefit the TIP112 transistor?
The monolithic construction with built-in base-emitter shunt resistors enhances the stability of the transistor and simplifies circuit design).
