Overview
The W29N01HVSINA TR is a 1 Gbit Single-Level Cell (SLC) NAND Flash memory chip manufactured by Winbond Electronics. This device is designed to provide a reliable and efficient storage solution for embedded systems, particularly those with limited space, pins, and power. It offers ultra-fast code and data access, contributing to an optimized user experience with its compact design and low power consumption.
Key Specifications
| Density | 1 Gbit (128 Mbytes) |
|---|---|
| Vcc | 2.7V - 3.6V |
| Bus Width | x8 |
| Package | TSOP48, BGA48 |
| Temperature Range | -40℃ ~ 85℃ / -40℃ ~ 105℃ / -40℃ ~ 115℃ |
| Random Read Time | 25us |
| Page Program Time | 250us (typ.) |
| Block Erase Time | 2ms (typ.) |
| Endurance | 100,000 Erase/Program Cycles |
| Data Retention | 10 years |
Key Features
- Single-Level Cell (SLC) Technology: Ensures high reliability and endurance.
- Fast Access Times: Random read time of 25us and sequential read cycle of 25ns.
- Low Power Consumption: Read: 25mA (typ. at 3V), Program/Erase: 25mA (typ. at 3V), CMOS standby: 10uA (typ.).
- Compact Packaging: Available in 48-pin TSOP and BGA packages.
- Standard NAND Command Set: Supports standard NAND flash memory interface with additional commands like Copy Back.
- Error Management: Each page includes a 64-byte spare area for error management functions.
Applications
The W29N01HVSINA TR is suitable for a variety of applications in embedded systems, including but not limited to:
- Industrial control systems
- Automotive systems
- Consumer electronics
- Medical devices
- Internet of Things (IoT) devices
Q & A
- What is the density of the W29N01HVSINA TR?
The W29N01HVSINA TR has a density of 1 Gbit (128 Mbytes). - What are the operating voltage ranges for this device?
The operating voltage range is 2.7V to 3.6V. - What types of packages are available for this device?
The device is available in TSOP48 and BGA48 packages. - What is the random read time of the W29N01HVSINA TR?
The random read time is 25us. - How many erase/program cycles can the device endure?
The device can endure 100,000 erase/program cycles. - What is the data retention period of the W29N01HVSINA TR?
The data retention period is 10 years. - Does the device support any additional commands beyond the standard NAND command set?
Yes, it supports additional commands like Copy Back. - What is the purpose of the spare area in each page?
The spare area is typically used for error management functions. - What are the typical power consumption values for read, program, and erase operations?
Read: 25mA (typ. at 3V), Program/Erase: 25mA (typ. at 3V). - What is the CMOS standby current?
The CMOS standby current is 10uA (typ.).
