BYW29-200HE3/45
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Vishay General Semiconductor - Diodes Division BYW29-200HE3/45

Manufacturer No:
BYW29-200HE3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE GEN PURP 200V 8A TO220AC
Delivery:
Payment:
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Product Introduction

Overview

The BYW29-200HE3/45 is a high-performance ultrafast recovery rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for use in high-frequency applications, offering low switching losses and high efficiency. It is part of the BYW29 series, which includes various voltage ratings and package options.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Maximum RMS Voltage VRMS 140 V
Maximum DC Blocking Voltage VDC 200 V
Maximum Average Forward Rectified Current at TC = 105 °C IF(AV) 8.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave superimposed on rated load) IFSM 100 A
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Maximum Instantaneous Forward Voltage at IF = 8.0 A, TJ = 150 °C VF 0.8 V
Maximum Reverse Recovery Time trr 25 ns
Typical Junction Capacitance at 4.0 V, 1 MHz CJ 45 pF
Package ITO-220AC, D2PAK (TO-263AB)

Key Features

  • Ultrafast recovery time of 25 ns, reducing switching losses and enhancing efficiency.
  • Low forward voltage drop of 0.8 V at IF = 8.0 A and TJ = 150 °C.
  • High peak forward surge current capability of 100 A.
  • RoHS-compliant and halogen-free, with AEC-Q101 qualification for automotive applications.
  • Glass passivated pellet chip junction for reliability and durability.
  • Molding compound meets UL 94 V-0 flammability rating.
  • Terminals are matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.

Applications

  • High-frequency rectifiers in switching mode power supplies.
  • Inverters and freewheeling diodes.
  • DC/DC converters.
  • Other power switching applications.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYW29-200HE3/45?

    200 V.

  2. What is the maximum average forward rectified current at TC = 105 °C?

    8.0 A.

  3. What is the typical reverse recovery time of this diode?

    25 ns.

  4. Is the BYW29-200HE3/45 RoHS-compliant and halogen-free?
  5. What are the typical applications of the BYW29-200HE3/45?

    High-frequency rectifiers, inverters, freewheeling diodes, DC/DC converters, and other power switching applications.

  6. What is the operating and storage temperature range of this diode?

    -65 to +150 °C.

  7. What is the maximum instantaneous forward voltage at IF = 8.0 A and TJ = 150 °C?

    0.8 V.

  8. Is the BYW29-200HE3/45 AEC-Q101 qualified?
  9. What are the package options available for the BYW29-200HE3/45?

    ITO-220AC and D2PAK (TO-263AB).

  10. What is the typical junction capacitance at 4.0 V, 1 MHz?

    45 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Capacitance @ Vr, F:45pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-65°C ~ 150°C
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BYWB29-50-E3/81
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BYW29-150HE3/45
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BYW29-50HE3/45
BYW29-50HE3/45
DIODE GEN PURP 50V 8A TO220AC

Similar Products

Part Number BYW29-200HE3/45 BYW29-100HE3/45 BYW29-200-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 100 V 200 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 20 A 1.3 V @ 20 A 1.3 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 100 V 10 µA @ 200 V
Capacitance @ Vr, F 45pF @ 4V, 1MHz 45pF @ 4V, 1MHz 45pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

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