BYW29-200HE3/45
  • Share:

Vishay General Semiconductor - Diodes Division BYW29-200HE3/45

Manufacturer No:
BYW29-200HE3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE GEN PURP 200V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYW29-200HE3/45 is a high-performance ultrafast recovery rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for use in high-frequency applications, offering low switching losses and high efficiency. It is part of the BYW29 series, which includes various voltage ratings and package options.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Maximum RMS Voltage VRMS 140 V
Maximum DC Blocking Voltage VDC 200 V
Maximum Average Forward Rectified Current at TC = 105 °C IF(AV) 8.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave superimposed on rated load) IFSM 100 A
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Maximum Instantaneous Forward Voltage at IF = 8.0 A, TJ = 150 °C VF 0.8 V
Maximum Reverse Recovery Time trr 25 ns
Typical Junction Capacitance at 4.0 V, 1 MHz CJ 45 pF
Package ITO-220AC, D2PAK (TO-263AB)

Key Features

  • Ultrafast recovery time of 25 ns, reducing switching losses and enhancing efficiency.
  • Low forward voltage drop of 0.8 V at IF = 8.0 A and TJ = 150 °C.
  • High peak forward surge current capability of 100 A.
  • RoHS-compliant and halogen-free, with AEC-Q101 qualification for automotive applications.
  • Glass passivated pellet chip junction for reliability and durability.
  • Molding compound meets UL 94 V-0 flammability rating.
  • Terminals are matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.

Applications

  • High-frequency rectifiers in switching mode power supplies.
  • Inverters and freewheeling diodes.
  • DC/DC converters.
  • Other power switching applications.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYW29-200HE3/45?

    200 V.

  2. What is the maximum average forward rectified current at TC = 105 °C?

    8.0 A.

  3. What is the typical reverse recovery time of this diode?

    25 ns.

  4. Is the BYW29-200HE3/45 RoHS-compliant and halogen-free?
  5. What are the typical applications of the BYW29-200HE3/45?

    High-frequency rectifiers, inverters, freewheeling diodes, DC/DC converters, and other power switching applications.

  6. What is the operating and storage temperature range of this diode?

    -65 to +150 °C.

  7. What is the maximum instantaneous forward voltage at IF = 8.0 A and TJ = 150 °C?

    0.8 V.

  8. Is the BYW29-200HE3/45 AEC-Q101 qualified?
  9. What are the package options available for the BYW29-200HE3/45?

    ITO-220AC and D2PAK (TO-263AB).

  10. What is the typical junction capacitance at 4.0 V, 1 MHz?

    45 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Capacitance @ Vr, F:45pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
388

Please send RFQ , we will respond immediately.

Same Series
BYWF29-200-E3/45
BYWF29-200-E3/45
DIODE GEN PURP 200V 8A ITO220AC
BYW29-200-E3/45
BYW29-200-E3/45
DIODE GEN PURP 200V 8A TO220AC
BYW29-100-E3/45
BYW29-100-E3/45
DIODE GEN PURP 100V 8A TO220AC
BYW29-150-E3/45
BYW29-150-E3/45
DIODE GEN PURP 150V 8A TO220AC
BYW29-50-E3/45
BYW29-50-E3/45
DIODE GEN PURP 50V 8A TO220AC
BYWF29-100-E3/45
BYWF29-100-E3/45
DIODE GEN PURP 100V 8A ITO220AC
BYWF29-150-E3/45
BYWF29-150-E3/45
DIODE GEN PURP 150V 8A ITO220AC
BYWF29-50-E3/45
BYWF29-50-E3/45
DIODE GEN PURP 50V 8A ITO220AC
BYWB29-100-E3/81
BYWB29-100-E3/81
DIODE GEN PURP 100V 8A TO263AB
BYWB29-50-E3/81
BYWB29-50-E3/81
DIODE GEN PURP 50V 8A TO263AB
BYW29-150HE3/45
BYW29-150HE3/45
DIODE GEN PURP 150V 8A TO220AC
BYW29-50HE3/45
BYW29-50HE3/45
DIODE GEN PURP 50V 8A TO220AC

Similar Products

Part Number BYW29-200HE3/45 BYW29-100HE3/45 BYW29-200-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 100 V 200 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 20 A 1.3 V @ 20 A 1.3 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 100 V 10 µA @ 200 V
Capacitance @ Vr, F 45pF @ 4V, 1MHz 45pF @ 4V, 1MHz 45pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

SMBJ5.0CA-E3/5B
SMBJ5.0CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
SM15T36CA-E3/57T
SM15T36CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T15A-E3/57T
SM15T15A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM15T200A-M3/57T
SM15T200A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM15T6V8CA-E3/57T
SM15T6V8CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM15T68AHM3/H
SM15T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T15CAHM3/H
SM6T15CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
BAS40-06-HE3-18
BAS40-06-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
1N4007GPEHE3/91
1N4007GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX84C18-HE3-08
BZX84C18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX384C16-E3-18
BZX384C16-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 200MW SOD323
BZX384B15-E3-18
BZX384B15-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323