BAS40-02V-G3-08
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Vishay General Semiconductor - Diodes Division BAS40-02V-G3-08

Manufacturer No:
BAS40-02V-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 120MA SOD523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-02V-G3-08 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is known for its low turn-on voltage and fast switching capabilities, making it suitable for a variety of high-frequency and low-voltage applications. It is packaged in a space-saving SOD-523 case, which is RoHS-compliant and available in both commercial and AEC-Q101 qualified versions.

Key Specifications

Parameter Test Condition Symbol Value Unit
Repetitive Peak Reverse Voltage - VRRM 40 V
Forward Continuous Current - IF 120 mA
Surge Forward Current tp = 10 ms square wave, Tj = 25 °C prior to surge IFSM 600 mA
Power Dissipation on FR-4 board with recommended soldering footprint Ptot 150 mW
Thermal Resistance Junction to Ambient Air on FR-4 board according to JEDEC® 51-3 with recommended soldering footprint RthJA 680 K/W
Thermal Resistance Junction to Lead - RthJL 480 K/W
Junction Temperature - Tj 125 °C
Operating Temperature Range - Top -55 to +125 °C
Storage Temperature Range - Tstg -55 to +150 °C
Reverse Breakdown Voltage IR = 10 μA (pulsed) V(BR) 40 V
Leakage Current Pulse test VR = 30 V, tp < 300 μs IR 20 - 100 nA
Forward Voltage Pulse test tp < 300 μs, IF = 1 mA VF 380 mV (IF = 1 mA), 1000 mV (IF = 40 mA) mV
Diode Capacitance VR = 0 V, f = 1 MHz CD 4 - 5 pF
Reverse Recovery Time IF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100 Ω trr 5 ns

Key Features

  • Very low turn-on voltage and fast switching capabilities.
  • Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
  • AEC-Q101 qualified available for automotive applications.
  • Space-saving SOD-523 package.
  • RoHS-compliant.
  • High temperature soldering guaranteed: 260 °C/10 s at terminals.

Applications

The BAS40-02V-G3-08 is suitable for various applications requiring low-voltage and high-frequency performance, such as:

  • Switching power supplies and DC-DC converters.
  • High-frequency rectification and voltage regulation.
  • Automotive systems (AEC-Q101 qualified version).
  • Consumer electronics and industrial control systems.

Q & A

  1. What is the repetitive peak reverse voltage of the BAS40-02V-G3-08?

    The repetitive peak reverse voltage (VRRM) is 40 V.

  2. What is the forward continuous current rating of this diode?

    The forward continuous current (IF) is 120 mA.

  3. What is the surge forward current rating?

    The surge forward current (IFSM) is 600 mA for a 10 ms square wave at Tj = 25 °C prior to surge.

  4. What is the thermal resistance junction to ambient air?

    The thermal resistance junction to ambient air (RthJA) is 680 K/W on an FR-4 board according to JEDEC® 51-3 with recommended soldering footprint.

  5. What is the junction temperature rating?

    The junction temperature (Tj) is 125 °C.

  6. What is the operating temperature range?

    The operating temperature range is -55 to +125 °C.

  7. Is the BAS40-02V-G3-08 RoHS-compliant?
  8. What package type does the BAS40-02V-G3-08 use?

    The BAS40-02V-G3-08 is packaged in a SOD-523 case.

  9. Is the BAS40-02V-G3-08 protected against electrostatic discharges?
  10. What are some typical applications for this diode?

    Typical applications include switching power supplies, high-frequency rectification, automotive systems, and consumer electronics.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):120mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:100 nA @ 30 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
Operating Temperature - Junction:125°C
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